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Y-doping can effectively improve the performance of HfO x -based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y-doping affecting the performance of HfO x -based memristors is still missing and unclear. Although impedance spectroscopy (IS) has been widely used to investigate impedance characteristics and switching mechanisms of RRAM devices, there is less IS analysis on Y-doped HfO x -based RRAM devices as well as devices at different temperatures. Here, the effect of Y-doping on the switching mechanism of HfO x -based RRAM devices with a Ti/HfO x /Pt structure were reported using current–voltage characteristics and IS. The results indicated that doping Y into HfO x films could decrease the forming/operate voltage and improve the RS uniform. Both doped and undoped HfO x -based RRAM devices obeyed the oxygen vacancies (V O) conductive filament model along the grain boundary (GB). Additionally, the GB resistive activation energy of the Y-doped device was inferior to that of the undoped device. It exhibited a shift of the V O trap level towards the conduction band bottom after Y-doping in the HfO x film, which was the main reason for the improved RS performance. [ABSTRACT FROM AUTHOR]

In the two-step preparation of perovskite solar cells, the ambient temperature is the main factor affecting the performance of the cells and controlling the crystallization of perovskite films. In this paper, we demonstrate the importance of resting temperature in the preparation of perovskite solar cells based on the morphology of PbI2 film and perovskite film. The ambient temperature around the PbI2 film directly influences its morphology after resting, and then affects the morphology of the annealed perovskite film. The experimental results show that the optimum ambient temperature for resting PbI2 is 28 °C at which solar cell conversion efficiency is improved to 22.2%. This study is of great significance to the preparation of high-performance PVSCs. [ABSTRACT FROM AUTHOR]

Near-interface oxide traps severely affect the voltage stability of silicon carbide metal-oxide-semiconductor devices. In this work, electron cyclotron resonance microwave nitrogen plasma and electron cyclotron resonance microwave nitrogen-hydrogen-mixed plasma were used to passivate near-interface oxide traps in silicon carbide metal-oxide-semiconductor capacitors. An improved low-temperature midgap voltage drift method was proposed to evaluate the voltage stability of silicon carbide metal-oxide-semiconductor capacitors. Results showed that the effect of passivating near-interface oxide traps and voltage stability could be improved by increasing the nitrogen passivation time. However, excessive nitrogen passivation created deep-level interface traps that degraded the interface quality, and a small amount of hydrogen could passivate the deep-level traps produced by the excess nitrogen. As a result, the samples subjected to the passivation process with the nitrogen-hydrogen-mixed plasma had a smaller flat-band voltage drift and more stable carbide metal-oxide-semiconductor capacitors than the samples subjected to nitrogen plasma. However, the excessive introduction of hydrogen also produced additional defects, consequently making the stability of the metal-oxide-semiconductor devices sensitive to the time of the passivation process by nitrogen-hydrogen-mixed plasma. Therefore, the suitable time of mixed plasma passivation is crucial to the improvement of the stability of devices. [ABSTRACT FROM AUTHOR]