558 results on '"Weyers, Markus"'
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102. Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers
103. Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots
104. Growth and Properties of Intentionally Carbon‐Doped GaN Layers
105. Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
106. Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability
107. MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
108. Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy
109. Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing
110. (AlGa)As composition profile analysis of trenches overgrown with MOVPE
111. Current spreading suppression by O- and Si-implantation in high power broad area diode lasers
112. High-power-class QCW red laser bars and stacks for pump and direct application
113. AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxial growth of AlN on sapphire
114. Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning
115. Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics
116. Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes
117. Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors
118. Ultrafast carrier dynamics in AlGaN/GaN superlattices by time-dependent reflectivity measurements (Conference Presentation)
119. Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice
120. From heterostructure design to package: development of efficient and reliable UVB LEDs (Conference Presentation)
121. Degradation effects of the active region in UV-C light-emitting diodes
122. GaN-Based Vertical n -Channel MISFETs on Free Standing Ammonothermal GaN Substrates
123. Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm
124. Reflectors and tuning elements for widely-tunable GaAs-based sampled grating DBR lasers
125. AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
126. Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes
127. Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs
128. Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes
129. Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N
130. In-situ photoluminescence measurements during MOVPE of GaN and InGaN in a CCS reactor
131. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780 nm
132. Avoidance of instable photoluminescence intensity from AlGaN bulk layers
133. Development of a compact mode-locked ECDL for precision frequency comparison experiments at 780 nm
134. Design and realization of a widely tunable sampled-grating distributed-Bragg reflector (SG DBR) laser emitting at 976 nm
135. In-situ metrology in multiwafer reactors during MOVPE of AIN-based UV-LEDs (Conference Presentation)
136. Metamorphic Al 0.5 Ga 0.5 N:Si on AlN/sapphire for the growth of UVB LEDs
137. 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area
138. Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern
139. Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs
140. Influence of AlN buffer layer on growth of AlGaN by HVPE
141. Generation of optical picosecond pulses with monolithic colliding‐pulse mode‐locked lasers containing a chirped double‐quantum‐well active region
142. Astigmatism-free high-brightness 1060 nm edge-emitting lasers with narrow circular beam profile
143. Triangular-shaped sapphire patterning for HVPE grown AlGaN layers
144. Strong amplitude-phase coupling in submonolayer quantum dots
145. Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers
146. AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs
147. Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
148. Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN [Phys. Status Solidi B253, 809-813 (2016)]
149. Quantification of matrix and impurity elements in AlxGa1−xN compounds by secondary ion mass spectrometry
150. Kinetics of AlGaN metal–organic vapor phase epitaxy for deep-UV applications
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