101. Back-gate control in an InAs-based two-dimensional system
- Author
-
Kyoichi Suzuki, Y. Hirayama, and S. Miyashita
- Subjects
Electron mobility ,Materials science ,Condensed matter physics ,business.industry ,Energy Engineering and Power Technology ,Heterojunction ,Substrate (electronics) ,Quantum Hall effect ,Condensed Matter Physics ,Gate control ,Electronic, Optical and Magnetic Materials ,Charge-carrier density ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Electrical conductor ,Quantum well - Abstract
Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.
- Published
- 2001
- Full Text
- View/download PDF