117 results on '"Yugang Zhou"'
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102. Doping Concentration and Structural Dependences of the Thermal Stability of the 2DEG in GaN-Based High-Electron-Mobility Transistor Structures
103. Study of Photocurrent Properties of GaN Ultraviolet Photoconductor Grown on 6H-SiC Substrate
104. A Low Phase-Noise X-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel A10.3Ga0.7N/A10.05Ga0.95N/GaN HEMTs.
105. AlGaN-GaN Double-Channel HEMTs.
106. Correlation of In-Situ Reflectance Spectra and Resistivity of GaN/Al2O3 Interfacial Layer in Metalorganic Chemical Vapor Deposition.
107. Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer.
108. High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots.
109. AlGaN/GaN/InGaN/GaN DH-HEMTs With an InGaN Notch for Enhanced Carrier Confinement.
110. Broadband Microwave Noise Characteristics of High-Linearity Composite-Channel Al03Ga0.7N/Al0.05Ga0.95N/GaN HEMTs.
111. High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment.
112. Highly Linear Al0.3Ga0.7N-Al0.05Ga0.95N-GaN Composite-Channel HEMTs.
113. A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications.
114. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes
115. A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
116. Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment.
117. Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs.
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