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123 results on '"Zabrodskii, A. G."'

109. Calculation of the Activation Energy of Electrical ε2‐Conductivity of Weakly Compensated Semiconductors.

Author

Poklonski, Nikolai A., Anikeev, Ilya I., Vyrko, Sergey A., and Zabrodskii, Andrei G.

Subjects
*ACTIVATION energy, *ELECTRICAL energy, *PHASE transitions, *SEMICONDUCTORS, *HUBBARD model, *QUANTUM tunneling
Abstract

A model of tunneling (jumping) migration of charge carriers near their mobility edge in the upper band of neutral states of majority hydrogen‐like impurities is proposed to calculate the energy of thermal activation of electrical ε 2 $\left(\epsilon\right)_{2}$ ‐conductivity of weakly compensated semiconductors. The difference from the known Hubbard model consists in the scheme of interimpurity transitions of charge carriers and in the method of calculating the position of their tunnel mobility edge. The drift mobility edge of free charge carriers corresponds to the thermal ionization energy of majority impurities ε 1 > ε 2 $\left(\epsilon\right)_{1}> \left(\epsilon\right)_{2}$ , which is located near the c‐band bottom or the v‐band top in n‐ and p‐type semiconductors, respectively, and is due to the overlap of excited states of electrically neutral majority impurities. The position of the tunnel mobility edge for ε 2 $\left(\epsilon\right)_{2}$ ‐conductivity is determined by taking into account the Coulomb interaction of the majority impurities in the charge states ( − 1 ) $\left(\right. - 1 \left.\right)$ and ( + 1 ) $\left(\right. + 1 \left.\right)$ . It is assumed that doping and compensating impurities form a single simple nonstoichiometric cubic lattice in a crystal matrix. The calculations of the activation energy ε 2 $\left(\epsilon\right)_{2}$ on the insulator side of the insulator–metal concentration phase transition for weakly compensated p‐Si:B, n‐Si:P, and n‐Ge:Sb crystals quantitatively agree with known experimental data. [ABSTRACT FROM AUTHOR]

Published
2024
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110. Low-temperature microwave magnetoresistance in p-Ge and the problem of averaging of the effective masses of light and heavy holes.

Author

Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., and Goloshchapov, S. I.

Subjects
*MAGNETORESISTANCE, *MAGNETIC fields, *MICROWAVES, *ELECTRIC resistance, *LOW temperatures
Abstract

A problem of the final time of the effective mass averaging in the system of light and heavy holes is manifested in a study of magnetoresistance (MR) in p-Ge at low temperatures and a frequency of 10 GHz. It is shown that the effective mass averaging takes place in the time which is more than 10-10 sec and is significantly more than the time of momentum relaxation. The experimentally estimated averaging time turned out to be connected with the time of the energy relaxation. [ABSTRACT FROM AUTHOR]

Published
2010
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111. Lattice distortions caused by spin interactions in a semiconductor in the vicinity of the insulator-metal phase transition.

Author

Zabrodskii, A. G., Veinger, A. I., Tisnek, T. V., and Goloshchapov, S. I.

Subjects
*ELECTRON paramagnetic resonance, *SEMICONDUCTORS, *PARTICLES (Nuclear physics), *RESONANCE, *SOLID state electronics
Abstract

A study of the electron spin resonance in Ge:As revealed that, in uncompensated semiconductors with shallow impurity levels, the insulator state is preserved near the insulator-metal phase transition because of the appearance of lattice distortions caused by interaction of spins localized on impurity atoms. We consider this effect as variation of the spin-Peierls transition. In Ge:As, this effect is manifested at carrier concentrations n = 3×1017–3.7×1017 cm-3. Owing to the random distribution of impurities in the Ge lattice, the properties of this transition differ from those of a similar transition in substances in which uncompensated spins are localized on constituent ions of the host lattice. [ABSTRACT FROM AUTHOR]

Published
2010
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112. Observation of the Quantum Correction Term for the Microwave Magnetoresistance in Weakly Doped Ge.

Author

Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., and Goloshchapov, S. I.

Subjects
*DOPED semiconductors, *GERMANIUM, *MAGNETORESISTANCE, *MAGNETIC fields, *ELECTRON paramagnetic resonance
Abstract

The anomalous magnetoresistance (MR) of the interference origin was first observed in the weakly doped nongenerated n-Ge:Sb and p-Ge:Ga. Early proposed for the MR detection, the electron spin resonance technique was used for this investigation. It was found that the anomalous MR was observed in these materials in the temperature range of the classical (nonhopping) motion and in the magnetic fields not higher than some hundred Oersteds. Some peculiarities of the classical MR were observed and explained too. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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113. Antiferromagnetic Spin Glass Ordering in the Vicinity of Insulator — Metal Transition in n-Ge:As.

Author

Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., and Goloshchapov, S. I.

Subjects
*GALLIUM arsenide, *ELECTRIC insulators & insulation, *SOLID state electronics, *FREE electron theory of metals, *ELECTRONIC structure, *SPIN glasses, *SOLID state physics
Abstract

Electron spin resonance investigation in the insulator phase of compensated n-Ge:As shows that near the insulator — metal transition the weakly localized electrons are connected in the pairs with the antiparallel coupled spins. As a result, the antiferromagnetic spin glass structure is created. The main manifestations of the phenomenon are the fall of the free (unpaired) spin density, the free spin increase with temperature, and characteristic antiferromagnetic g-factor shift with the electron density in the pretransition range. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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114. In memory of Karl Karlovich Rebane

Author

Aleksandrov, E B, Alferov, Zh I, Andreev, A F, Bagaev, S N, Borisevich, N A, Zabrodskii, A G, Kaplyanskii, A A, Osipov, Yu S, Osip, Yu A, Pozhela, Yu K, Suris, R A, and Trifonov, E D

Published
2008

116. In memory of Boris Petrovich Zakharchenya

Author

Aleksandrov, Evgenii B, Alferov, Zhores I, Andreev, Aleksandr F, Varshalovich, Dmitrii A, Zabrodskii, Andrei G, Kagan, Yurii M, Kaplyanskii, Alexandr A, Keldysh, Leonid V, Krokhin, Oleg N, Novikov, Boris V, Perel', V I, and Suris, Robert A

Published
2006
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117. Scientific Session of the Physical Sciences Division of the Russian Academy of Sciences (19 December 2005)

Author

Krokhin, Oleg N, Zabrodskii, Andrei G, Avrorin, Evgenii N, Simonenko, Vadim A, Shibarshov, Leonid I, and Preobrazhenskii, Vladimir L

Abstract

A scientific session of the Physical Sciences Division of the Russian Academy of Sciences (RAS) was held in the Conference Hall of the P N Lebedev Physics Institute, RAS, on December 19, 2005. The following reports were presented at the session:

Published
2006
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