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This study focuses on zinc oxide by both computational and experimental methods. Pure and In-doped ZnO thin films were produced by spray pyrolysis at 300∘C onto glass substrate. X-ray patterns reveal the polycrystalline structure according to wurtzite along the (002) direction recording a smaller grain size in nanometric scale. This aspect is confirmed by AFM scanned pictures. High transparency of thin film is observed in spite of the indium insertion into ZnO lattice which decreases it slightly. A wide bandgap exceeds 3 eV of such as-grown films were recorded. Blue and orange emissions were detected as confirmed by photoluminescence analysis. Computational result analysis is used to demonstrate the ideal geometries in the ground states of pure and doped ZnO. The UV–visible absorption band shifts from 360 nm to 448 nm as a result of In-doping. The HUMO and LUMO diagrams demonstrate a drop in energy E as a result of doping, and the DOS profiles validate and confirm this detail. Also, the effect of indium on the linear and nonlinear optical parameters of zinc oxide was discussed. [ABSTRACT FROM AUTHOR]

Liquid metal alloys can accumulate specific solute metal atoms on their surface, creating distinct quasi‐ordered atomic layers. Such atomic layers can be tuned by varying the alloy composition to form catalytic interfaces suited for multi‐step reactions. Here, the surface enrichment in gallium‐indium alloys is studied and utilized for carbon dioxide (CO2) electrochemical reduction. The results show that adding a small amount of indium (16.8 at%) to gallium leads to a significant indium enrichment of >83 at% on the topmost layer of the alloy. This enrichment dictates the CO2 conversion pathway, leading to 98% faradaic efficiency toward formate at −1.90 V vs reversible hydrogen electrode (RHE). This study produces unprecedented insights into key interfacial processes and lays the foundation for significant further work within the areas of catalysis and liquid metals. [ABSTRACT FROM AUTHOR]

The achievement of complete conversion of PbBr 2 films presents a significant challenge in the development of CsPbBr 3 films with consistent growth, comprehensive coverage, and controllable components. To address this challenge, introducing a porous structure in the planar PbBr 2 film is advantageous for facilitating the immersion of CsBr precursor, thereby reducing impurity phase formation and mitigating strain caused by the film volume expansion. In order to accomplish this, indium tribromide (InBr 3) was employed as an additive and the InBr 3 (DMF) 3 adduct was utilized to expedite the release of organic molecules in PbBr 2 (DMF), resulting in the transformation of planar PbBr 2 film into porous structures. The growth orientation of PbBr 2 crystals was altered by this transformation, effectively suppressing the generation of metallic Pb impurities in the film. Additionally, it not only optimizes the morphology of CsPbBr 3 film but also reduces impurity phase. As a result, the InBr 3 :CsPbBr 3 perovskite solar cell achieved an efficiency of 7.28 %. The majority of In3+ ions were concentrated near the buried interface between SnO 2 and InBr 3 :CsPbBr 3 , leading to significant improvements in both non-radiative recombination defect states within the perovskite film and electron injection and collection capabilities within the device. [ABSTRACT FROM AUTHOR]

The study investigates the potential of technology-critical elements (TCEs) in the bottom sediments of the Biała Przemsza River as indicators of anthropogenic activities. The mass fractions of TCEs: Ge, Ga, In, Tl, Sb and Te (and other elements) in the sediment were analysed by inductively coupled plasma mass spectrometry with the maximum mass fractions: 2.46, 25.6, 0.528, 27.7, 12.5 and 0.293 mg/kg, respectively. Distribution and identification of TCE sources were supported by statistical analysis (principal component analysis coupled with varimax rotation and hierarchical cluster analysis). Assessments of TCE contamination using the geoaccumulation index, pollution index, contamination factor, enrichment factor and the antimony-to-arsenic ratio highlighted the high contamination of bottom sediments by Sb, Ga, Tl, Cd, As, Zn, Pb and moderate contamination by Co, In and V. Distinct behaviour patterns were observed among TCEs, revealing Sb and Tl as potential indicators of Zn-Pb ore mining activities. Co, V, Ge and, to a lesser extent, Te emerged as promising indicators of coal and coal fly ash effluents. Sequential chemical extraction of TCEs showed that Sb, In and Tl had the highest mobility from sediments. The Risk Assessment Code calculations suggest, that in the Biała Przemsza River bottom sediments, there is an average risk of contamination by As, Tl and Mn. Soluble forms of Tl, Ge, Sb, Te and In were identified in descending order, indicating their bioavailability. [ABSTRACT FROM AUTHOR]

By exploiting the electronic capabilities of the N‐heterocyclic boryloxy (NHBO) ligand, we have synthesized "naked" acyclic gallyl [Ga{OB(NDippCH)2}2]− and indyl [In{OB(NDippCH)2}2]− anions (as their [K(2.2.2‐crypt)]+ salts) through K+ abstraction from [KGa{OB(NDippCH)2}2] and [KIn{OB(NDippCH)2}2] using 2.2.2‐crypt. These systems represent the first O‐ligated gallyl/indyl systems, are ultimately accessed from cyclopentadienyl GaI/InI precursors by substitution chemistry, and display nucleophilic reactivity which is strongly influenced by the presence (or otherwise) of the K+ counterion. [ABSTRACT FROM AUTHOR]

Chalcogenide glasses have broad applications in the mid-infrared optoelectronics field and as phase-change materials (PCMs) due to their unique properties. Chalcogenide glasses can have crystalline and amorphous phases, making them suitable as PCMs for reversible optical or electrical recording. This study provides an in-depth analysis of the evaporation kinetics of indium-doped chalcogenides, GeTe4 and GeTe5, using the physical vapor deposition technique on glass substrates. Our approach involved a detailed examination of the evaporation process under controlled temperature conditions, allowing precise measurement of rate changes and energy dynamics. This study revealed a significant and exponential increase in the evaporation rate of GeTe4 and GeTe5 with the introduction of indium, which was particularly noticeable at higher temperatures. This increase in evaporation rate with indium doping suggests a more complex interplay of materials at the molecular level than previously understood. Furthermore, our findings indicate that the addition of indium affects the evaporation rate and elevates the energy requirements for the evaporation process, providing new insights into the thermal dynamics of these materials. This study's outcomes contribute significantly to understanding deposition processes, paving the way for optimized manufacturing techniques that could lead to more efficient and higher-performing optoelectronic devices and memory storage solutions. [ABSTRACT FROM AUTHOR]

In this work, tetrahydrobenzo[a]xanthene-11-ones are effectively synthesized without the need for solvents and in an environmentally safe manner by the use of indium sulfide (In2S3) nanoparticle as a catalyst. Indium sulfide (In2S3) nanoparticles were synthesized by the hydrothermal method, and X-ray diffraction pattern (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), and transition electron microscopy (TEM) were among the techniques used to characterize indium sulfide (In2S3) nanoparticles. The synthesis of tetrahydrobenzo[a]xanthene-11-ones was achieved in a single pot using a three-component reaction involving β-naphthol, dimedone, and aryl aldehyde. The resultant indium sulfide (In2S3) nanoparticles were produced without the need for a solvent and exhibited remarkable yields, as well as quick reaction times and reusable catalysts. [ABSTRACT FROM AUTHOR]

Lapachol (2-hydroxy-3-(3-methylbut-2-en-1-yl)naphthalene-1,4-dione) is a 1,4-naphthoquinone-derived natural product that presents numerous bioactivities and was shown to have cytotoxic effects against several human tumor cells. Indium(III) complexes with a variety of ligands also exhibit antineoplastic activity. Indium(III) complexes [In(lap)Cl2].4H2O (1), [In(lap)2Cl(Et3N)] (2), [In(lap)3]·2H2O (3) [In(lap)(bipy)Cl2] bipy = 2,2′-bipyridine (4) and [In(lap)(phen)Cl2] phen = 1,10-phenanthroline (5) were obtained with 2-hydroxy-3-(3-methylbut-2-en-1-yl)naphthalene-1,4-dione (lapachol). Crystal structure determinations for (4) and (5) revealed that the indium(III) center is coordinated to two O atoms from lapachol, two N atoms from 1,10-phenanthroline or 2,2′-bipyridine, and two chloride anions, in a distorted octahedral geometry. Although both complexes (4) and (5) interacted with CT-DNA in vitro by an intercalative mode, only 5 exhibited cytotoxicity against MCF-7 and MDA-MB breast tumor cells. 1,10-phenanthroline and complex (5) presented cytotoxic effects against MCF-7 and MDA-MB cells, with complex (5) being threefold more active than 1,10-phenanthroline on MCF-7 cells. In addition, complex (5) significantly reduced the formation of MDA-MB-231 colonies in a clonogenicity assay. The foregoing results suggest that further studies on the cytotoxic effects and cellular targets of complex (5) are of utmost relevance. [ABSTRACT FROM AUTHOR]

Chalcones are a class of naturally occurring flavonoid compounds associated to a variety of biological and pharmacological properties. Several reviews have been published describing the synthesis and biological properties of a vast array of analogues. However, overviews on the reactivity of chalcones has only been explored in a few accounts. To fill this gap, a systematic survey on the most recent developments in the transition metal‐catalyzed transformation of chalcones was performed. The chemistry of copper, palladium, zinc, iron, manganese, nickel, ruthenium, cobalt, rhodium, iridium, silver, indium, gold, titanium, platinum, among others, as versatile catalysts will be highlighted, covering the literature from year 2000 to 2023, in more than 380 publications. [ABSTRACT FROM AUTHOR]

One of the characteristic features of PbTe is an uncommon growth of bandgap with increasing temperature, which is quite opposite to the bandgap behavior of the semiconductors commonly used in electronics, for example, Si, Ge, GaAs, and InSb. This specificity allows one to increase the operating temperature of photodiodes fabricated using PbTe up to about 150 K. At the first stage of development, we prepared infrared (IR) photodiodes on the base of bulk single crystalline PbTe. To this end, the ingots with a diameter of about 40 mm were grown by the Czochralski technique. Then, the PbTe p–n junctions were fabricated by using indium donor diffusion to diffuse indium into the PbTe samples. Current–voltage and capacitance–voltage characteristics and spectral detectivity were measured over a wide temperature range and analyzed. The dark saturation current density at T = 100 K was of the order of 10−7 A/cm2. Finally, the unique solid-state multi-stage thermoelectric cooler operated at temperatures up to 150 K was developed. The present study would pave the way to creating a module for efficient photodetection in the mid-wave IR range combining two solid-state devices, namely, the p–n photodiode and thermoelectric cooler, while the latter supports the former. [ABSTRACT FROM AUTHOR]

p‐type 2D ferroelectric semiconductors (2D FeSs) play an increasingly essential role in the advanced nonvolatile and morphotropic beyond‐Moore electronic devices with high performance and low power consumption. But reliable p‐type 2D FeS with holes as majority carriers are still scarce. Herein, the first experimental realization of room‐temperature ferroelectricity in van der Waals layered β‐In1.75Sb0.25Se3 down to few layer is reported. The origin of ferroelectricity in β‐In1.75Sb0.25Se3 comes from aliovalent elemental substitution, antimony substituting to the indium sites (SbIn), changing the local environment of the central‐layer Se atoms. Thanks to the intrinsic ferroelectric and semiconducting natures, FeS field‐effect transistor (FeSFET) devices based on β‐In1.75Sb0.25Se3 exhibit reconfigurable, multilevel nonvolatile memory (NVM) states, which can be successively modulated by gate voltage stimuli. Furthermore, the inherent operation mechanism, due to the switchable polarization, indicates that a neuromorphic memory is also possible with 2D FeSFETs. These presented results facilitate the technological implementation of versatile 2D FeS devices for next‐generation logic‐in‐memory approach for Internet‐of‐Things entities. [ABSTRACT FROM AUTHOR]

Exploring stable and robust catalysts to replace the current toxic CuCr based catalysts for dehydrogenative coupling of ethanol to ethyl acetate is a challenging but promising task. Herein, novel NiIn based catalysts were developed by tailoring Ni catalysts with Indium (In) for this reaction. Over the optimal Ni0.1Zn0.7Al0.3InOx catalyst, the ethyl acetate selectivity reached 90.1% at 46.2% ethanol conversion under the conditions of 548 K and a weight hourly space velocity of 1.9 h-1 in the 370 h time on stream. Moreover, the ethyl acetate productivity surpassed 1.1 gethyl acetate gcatalyst-1 h-1, one of the best performance in current works. According to catalyst characterizations and conditional experiments, the active sites for dehydrogenative coupling of ethanol to ethyl acetate were proved to be Ni4In alloys. The presence of In tailored the chemical properties of Ni, and subsequently inhibited the C–C cracking and/or condensation reactions during ethanol conversions. Over Ni4In alloy sites, ethanol was dehydrogenated into acetaldehyde, and then transformed into acetyl species with the removal of H atoms. Finally, the coupling between acetyl species and surface-abundant ethoxyde species into ethyl acetate was achieved, affording a high ethyl acetate selectivity and catalyst stability. [ABSTRACT FROM AUTHOR]

Defect levels induced by defect-complexes in Ge play important roles in device fabrication, characterization, and processing. However, only a few defect levels induced by defect-complexes have been studied, hence limiting the knowledge of how to control the activities of numerous unknown defect-complexes in Ge. In this study, hybrid density functional theory calculations of defect-complexes involving oversize atom (indium) and n-type impurity atoms in Ge were performed. The formation energies, defect-complex stability, and electrical characteristics of induced defect levels in Ge were predicted. Under equilibrium conditions, the formation energy of the defect-complexes was predicted to be within the range of 5.90–11.38 eV. The defect-complexes formed by P and In atoms are the most stable defects with binding energy in the range of 3.31-3.33 eV. Defect levels acting as donors were induced in the band gap of the host Ge. Additionally, while shallow defect levels close to the conduction band were strongly induced by the interactions of Sb, P, and As interstitials with dopant (In), the double donors resulting from the interactions between P, As, N, and the host atoms including In atom are deep, leading to recombination centers. The results of this study could be applicable in device characterization, where the interaction of In atom and n-type impurities in Ge is essential. This report is important as it provides a theoretical understanding of the formation and control of donor-related defect-complexes in Ge. [ABSTRACT FROM AUTHOR]

p‐type 2D ferroelectric semiconductors (2D FeSs) play an increasingly essential role in the advanced nonvolatile and morphotropic beyond‐Moore electronic devices with high performance and low power consumption. But reliable p‐type 2D FeS with holes as majority carriers are still scarce. Herein, the first experimental realization of room‐temperature ferroelectricity in van der Waals layered β‐In1.75Sb0.25Se3 down to few layer is reported. The origin of ferroelectricity in β‐In1.75Sb0.25Se3 comes from aliovalent elemental substitution, antimony substituting to the indium sites (SbIn), changing the local environment of the central‐layer Se atoms. Thanks to the intrinsic ferroelectric and semiconducting natures, FeS field‐effect transistor (FeSFET) devices based on β‐In1.75Sb0.25Se3 exhibit reconfigurable, multilevel nonvolatile memory (NVM) states, which can be successively modulated by gate voltage stimuli. Furthermore, the inherent operation mechanism, due to the switchable polarization, indicates that a neuromorphic memory is also possible with 2D FeSFETs. These presented results facilitate the technological implementation of versatile 2D FeS devices for next‐generation logic‐in‐memory approach for Internet‐of‐Things entities. [ABSTRACT FROM AUTHOR]

Liquid metals are an interesting class of materials with the unique combination of metallic nature and liquid fluidity, and have recently been explored in many emerging fields. Their potential applications in catalysis, unfortunately, remain largely untapped. Herein, Ga‐mediated liquid metal alloying as an effective strategy is demonstrated to prepare functional alloys for catalysis. The alloying is carried out by dissolving indium or tin pellets in liquid gallium at room temperature or assisted by gentle heating, giving rise to binary Ga1−xInx and Ga1−xSnx liquid metal alloys with tunable chemical compositions. When further subjected to ultrasonication in water, they are ruptured into nanosized particles with liquid metal cores and thin surface oxide shells. Electrochemical measurements reveal that the liquid metal alloying significantly promotes electrocatalytic CO2 reduction to formate. Taking Ga0.75In0.25 as an example, its formate Faradaic efficiency is enhanced by 10%–20% compared to those of Ga and In, and its formate partial current density is 4–6 times larger than those of Ga and In. This enhancement is rationalized via computational simulations showing that the surrounding of In active sites with Ga atoms deactivates the undesirable reaction pathways to CO or H2, and facilitates selective formate electrosynthesis. [ABSTRACT FROM AUTHOR]

Tris(pentafluoroethyl)indane dihydrate, [In(C2F5)3(OH2)2], and the gallium analog, [Ga(C2F5)3(OH2)2], serve as transfer reagents for the In(C2F5)3 and Ga(C2F5)3 units, as illustrated by the preparation of salts of (pseudo)halogenotris(pentafluoroethyl)indate and ‐gallate anions, [M(C2F5)3)X]− (M=Ga, In; X=F, Cl, Br, I, CN, SCN). Due to the water tolerance and water solubility of [In(C2F5)3(OH2)2] and [Ga(C2F5)3(OH2)2], reactions can be performed in the presence of water or even in an aqueous medium. [ABSTRACT FROM AUTHOR]

Facile transmetalation is observed from a d8 metal, platinum(II), to indium and gallium leading to the extrusion of methylated gallate and indate anions representing a rare case of the "reverse" transmetalation from a d8 metal to a main group metal. The Pt–Ga and Pt–In bonding in the bimetallic complexes was analyzed through bosonic and fermionic potentials, QTAIM, and NBO. [ABSTRACT FROM AUTHOR]

The present study corroborates that the neutral tridentate N‐ligand 1,4,7‐trimethyl‐triazacyclononane (Me3TACN) qualifies as a versatile platform to study selective ligand exchange with rare‐earth‐metal alkyl complexes, herein [(Me3TACN)YMe3]. Treatment with Brønsted‐acidic bis(dimethylsilyl)amine, HN(SiHMe2)2, gave selectively the mono‐exchanged heteroleptic complex [(Me3TACN)YMe2{N(SiHMe2)2}]. Depending on the molecular ratio employed, the reaction of [(Me3TACN)YMe3] with AlMe3 resulted in the isolation/crystallization of [(Me3TACN)YMe2(AlMe4)] [1 : 1] or ion‐separated [(Me3TACN)YMe(AlMe4)][AlMe4] [1 : 2] and [(Me3TACN)YMe(AlMe4)][Al2Me7] [1 : 3]. Analogous reactions with the heavier group 13 methyls GaMe3 and InMe3 generated mixed methyl/tetramethylgallato complex [(Me3TACN)YMe2(GaMe4)] and ion‐separated [{(Me3TACN)YMe2}2{μ‐Me}][InMe4]. Finally, dimethylalane, HAlMe2, converted [(Me3TACN)YMe3] into heteroaluminate [(Me3TACN)Y(HAlMe3)3], representing an AlMe3‐supported, molecular yttrium trihydride complex. All compounds were investigated by single crystal X‐ray diffraction (SC‐XRD), homo‐ and heteronuclear (13C, 27Al, 89Y, 115In) NMR as well as IR spectroscopies and elemental analyses. [ABSTRACT FROM AUTHOR]

This paper aims to study the effect of ultrasonic aluminum (Al) bonding and lamination processes on the electrical performance of copper indium gallium (di)selenide (CIGS) thin film photovoltaic (TFPV) solar panels. Ultrasonic Al bonding on the MoSe2 layer of the CIGS TFPV solar panel was performed in three configurations: eight bonds, 16 bonds, and parallel configurations. The lamination process was performed on the Al bonds with MoSe2 layers of the CIGS TFPV solar panel. Ultrasonic bonding and lamination processes significantly affect the electrical performance of CIGS TFPV solar panels. Open circuit voltage, Voc is the least affected electrical characteristic with the application of ultrasonic bonding and lamination processes as compared to short circuit current (Isc), current density (Jsc), maximum power (Pmpp), fill factor (FF), and efficiency. 8-bonds configuration has the highest efficiency, ranging from 11.45% to 13.86% throughout unique connections of I-V measurement, compared to 16-bonds ranging from 7.99% to 10.77%, and parallel configurations, ranging from 9.14% to 11.92%. The notable variations in electrical properties with the processes used to create laminated CIGS TPFV solar panels with ultrasonic Al bonding can be explained by physical examination and lock-in infrared (IR) thermography. The ultrasonic Al bond is best suited to be used as the interconnection mean in the CIGS TFPV solar panel compared to that of conductive adhesive that has been widely applied nowadays. [ABSTRACT FROM AUTHOR]

The thermal condensation of melamine into molecules melam, melem, and the one-dimensional polymer melon has already been reported. An interesting question arises about the impact of other compounds being present in this process of thermal conversion. The solid-state reaction of C3N6H6 with InCl3 leads to a novel compound featuring deprotonated melam units in a supramolecular assembly, based on the [C12N20H8]4− anion that is interconnected in the structure via N–In–N bonding. The reaction pathway of the formation of this compound is investigated by thermal analysis and the crystal structure of unique (NH4)[(InCl2)3(C12N20H8)]·⅔[InCl3(NH3)] is reported as well as its photoluminescence properties. [ABSTRACT FROM AUTHOR]

A low‐thermal‐budget fabrication approach is developed to realize high‐performance fluorine‐doped indium oxide (In2O3:F) thin‐film transistors (TFTs) with remarkable bias‐stress stability. The ultrathin transistor channel layer is prepared by a re‐developed atomic layer deposition (ALD) process of using cyclopentadienyl indium(I) (InCp) and O2 plasma to deposit a crystalline In2O3 film, followed by a new fluorine doping strategy to use CF4 plasma to afford the In2O3:F layer. As revealed by the density functional theory (DFT) analysis, the fluorine doping can stabilize the lattice oxygen and electrically passivate the problematic VO defects in In2O3 by forming the FOFi spectator defects. Therefore, the fabricated In2O3:F TFTs show simultaneously excellent electrical performance and remarkable bias‐stress stability, with high µFE of 35.9 cm2 V−1 s−1, positive Vth of 0.36 V, steep SS of 94.3 mV dec−1, small hysteresis of 33 mV, and small ΔVth of −111 and 49 mV under NBS and PBS, respectively. This work demonstrates the high promise of the fluorinated ALD In2O3:F TFTs for the CMOS back‐end‐of‐line (BEOL) compatible technologies toward advanced monolithic 3D integration. [ABSTRACT FROM AUTHOR]

In(III) tetraarylporphyrin complexes with 4‐thiomethylphenyl (1‐InPor), thien‐3‐yl (2‐InPor), thien‐2‐yl (3‐InPor) and 5‐bromothien‐2‐yl (4‐InPor) meso‐aryl rings have been synthesized and characterized. The complexes have been conjugated to gold and silver nanoparticles (AuNPs and AgNPs). The photodynamic antimicrobial chemotherapy (PACT) activities of 1–4‐InPor and their AuNP and AgNP conjugates have been investigated against both planktonic bacteria and biofilms of Gram‐(+) S. aureus and Gram‐(−) E. coli. 2.5 μg.mL−1 solutions of 1–4‐InPor exhibited favorable PACT activities against planktonic S. aureus with high Log10 reduction values in the 4.28–7.69 range upon 75 min photoirradiation with a Thorlabs M625L3 LED (240 mW.cm−2) mounted onto the illumination chamber of a Modulight 7710 medical laser system to provide a dose at the well‐plate of 86 mJ.cm−2.min−1. In contrast, low values in the 1.4–1.9 range were obtained against E. coli with 10 μg.mL−1 solutions. 1–4‐InPor exhibited relatively low PACT activity against the biofilm cells of S. aureus and E. coli. Conjugation of 1–4‐InPor to AgNPs and AuNPs significantly enhanced the PACT activities. This is demonstrated by the complete eradication of planktonic S. aureus at shorter irradiation times with high Log10 values>7.69 and moderate Log10 values>2 against planktonic E. coli for the meso‐thienylporphyrin conjugates. [ABSTRACT FROM AUTHOR]

The ternary solid solution Na2Ga7−xInx (x≤0.25) was synthesized by annealing the elements at 300 °C in sealed Ta ampoules. Differential thermal analysis (DTA) indicated incongruent phase formation. The peritectic temperature ranges from 501(2) °C (x=0) to 474(2) °C (x=0.25). In addition, the unit cell parameters increase significantly with In content. At its maximum of x=0.25, the unit cell volume increases by 1 % compared to Na2Ga7. The In positions are deduced from single‐crystal X‐ray diffraction data obtained for the composition Na2Ga6.95In0.05 (space group Pnma; Z=8; a=14.876(3) Å, b=8.688(2) Å, c=11.605(4) Å). In the crystal structure of Na2Ga7, which consists of Ga12 icosahedra and 4‐bonded Ga atoms, the In atoms solely substitute the latter. The Na atoms are located in the channels and cavities of the framework. The phase is electron‐precise and can be considered a Zintl‐Wade compound with the formula unit [Na+]16[(12b)Ga122−]4[(4b)Ga−]7.6[(4b)In−]0.4. [ABSTRACT FROM AUTHOR]

The burgeoning field of semiconductor‐mediated organic conversion is of paramount significance, with zinc indium sulfide (ZnIn2S4) emerging as a standout candidate owing to its benign nature, optimal bandgap, extensive light absorption spectrum, remarkable physicochemical properties, and straightforward synthesis. This review examines the latest breakthroughs and the trajectory of ZnIn2S4‐based photocatalysts in the realm of selective organic transformation. We start with a distinct overview of the intrinsic physical attributes of ZnIn2S4 and the underlying mechanisms driving its efficacy in photocatalytic organic transformations. Subsequently, the preparation methods of ZnIn2S4 are summarized. The main focus is the state‐of‐the‐art photocatalytic application of various ZnIn2S4‐based photocatalysts, such as redox reactions, the construction of C−C, C−S and S−S bonds, and the cleavage of C−O, C−C, and C=C bonds. In the conclusion part, we provide our perspectives on the prospective advancements and the remaining challenges that lie ahead in the optimization of ZnIn2S4‐based photocatalysts, with the ultimate goal of enhancing their efficacy for a diverse array of photosynthetic applications. It is anticipated to inspire the strategic engineering of ZnIn2S4 and other semiconductor‐based photocatalysts for various artificial photosynthesis reactions. [ABSTRACT FROM AUTHOR]

The ternary solid solution Na2Ga7−xInx (x≤0.25) was synthesized by annealing the elements at 300 °C in sealed Ta ampoules. Differential thermal analysis (DTA) indicated incongruent phase formation. The peritectic temperature ranges from 501(2) °C (x=0) to 474(2) °C (x=0.25). In addition, the unit cell parameters increase significantly with In content. At its maximum of x=0.25, the unit cell volume increases by 1 % compared to Na2Ga7. The In positions are deduced from single‐crystal X‐ray diffraction data obtained for the composition Na2Ga6.95In0.05 (space group Pnma; Z=8; a=14.876(3) Å, b=8.688(2) Å, c=11.605(4) Å). In the crystal structure of Na2Ga7, which consists of Ga12 icosahedra and 4‐bonded Ga atoms, the In atoms solely substitute the latter. The Na atoms are located in the channels and cavities of the framework. The phase is electron‐precise and can be considered a Zintl‐Wade compound with the formula unit [Na+]16[(12b)Ga122−]4[(4b)Ga−]7.6[(4b)In−]0.4. [ABSTRACT FROM AUTHOR]

Initially, indium doped SnO2 (In–SnO2) nanoparticles were synthesised, using co-precipitation technique which then utilised to produce Indium doped SnO2/Polyaniline (In–SnO2/PANi) nanocomposites using in-situ polymerisation. The as-synthesised nanocomposites were found to be selective towards sensing of dimethyl methyl phosphonate (DMMP) gas. The influence of doping on structural, optical, thermal stability, morphology and shape were investigated using XRD, FT-IR, FE-SEM, XPS and EDS. The concentration of doping was optimised for maximum gas response. Furthermore, the gas sensing experiment was executed at various humidity levels. 9@ISP nanocomposites show maximal response (85.1%) as compared to pure PANi, pure SnO2, 0@ISP, 3@ISP, 6@ISP, 12@ISP and 15@ISP nanocomposites. For 10 ppm of DMMA gas, response and recovery times were 33.5 and 27.1 s, respectively. As the DMMP gas concentration rises from 1 to 25 ppm, reaction to gas sensors was found to be increased. DMMP gas shows enhanced selectivity towards 9@ISP nanocomposite as compared to the other gases (xylene, toluene, benzene, and acetonitrile gas). The reproducibility study of 9@ISP nanocomposite was performed for 30 days and found to be impressive. [ABSTRACT FROM AUTHOR]

Indium (In) is a critical metal in liquid-crystal displays and solar panels. The Earth's crust has low In concentration in the order of 10 ng g−1, but it may be concentrated in sulphides by up to six orders of magnitude. Although In isotope studies may improve our understanding of the behaviour of In during different geological processes, such studies are limited for terrestrial samples. Here, we report a new method for In purification and high-precision isotope analysis for chemically different standards. A one-column method was used to separate In from the matrix with a recovery of 98% ± 2% (2SD). Indium concentrations and isotopic compositions were determined using the column eluate, and the results show large In isotope fractionation on desorbing In from the resin. Based on the mass balance, no significant In isotope fractionation was observed when In recovery is >93.8%. In terms of precision and accuracy of In isotopic compositions, the Ag-doping method was likely better than the standard–sample bracketing (SSB) method for correction of instrumental fractionation, with In uptake concentration down to 1 ng g−1 during isotope analysis. To ensure the accuracy of isotope analyses, the concentration match between the sample and standard should be within ±30%. An elemental doping study indicated that Na, K, Te, Sb, Pb, and Cu have no impact on the accuracy of In isotope analysis within the designated range; however, Ca/In, Mg/In, Cd/In and Sn/In ratios of >5, >20, >0.001 and >0.1, respectively, in sample solutions have significant impacts on In isotope analyses. Four international standards (BCR-2 basalt; J-Zn-1 sulphide; NIST-2711a soil; and OU-3 granite) and three in-house igneous rocks, purified using the developed method, had negligible isobaric interferences and matrix effect during In isotope analysis, demonstrating that the method can be used for terrestrial samples with different compositions. [ABSTRACT FROM AUTHOR]

We have examined the influence of bump shape and bonding pressure on low-temperature electrical properties of indium bump connections including superconducting transition temperature, normal state resistance, and superconducting critical current. We describe our test structures, bonding process, and methods of characterization. At temperatures below 1 K, we observe critical currents greater than 70 mA for indium bump connections with a nominal bump size of 17 µm × 17 µm. [ABSTRACT FROM AUTHOR]

Green chemistry strives for sustainability at the molecular level and is gaining increasing relevance in the development of chemical reactions. The haloalkynylation reaction is a highly atom–economical C−C coupling reaction that was previously only achieved using transition metal catalysts. It enables the introduction of an alkyne unit and a halogen atom into the target molecule. Herein, we present a haloalkynylation reaction catalyzed by indium(III) halides. The use of indium(III) bromide as a catalyst leads exclusively to the cis addition products with yields up to 86 %. In addition, iodoacetylenes can be applied for the first time for the haloalkynylation reaction of internal alkynes which is an important step forward in the development of industrially relevant and sustainable catalysts. In contrast to gold catalysis, which proceeds via a similar mechanism, the use of alkyl‐substituted haloacetylenes as reagents is also possible. Based on 13C labeling experiments and quantum chemical calculations, we postulate two possible mechanisms for the indium(III)‐catalyzed haloalkynylation reactions. [ABSTRACT FROM AUTHOR]

There is an increasing demand to improve battery safety and performance as part of the global push to convert the small electronics and transportation sector to infrastructures based on electricity. This work follows the deposition of lithium metal in anode‐less conditions by an operando optical microscope using a transparent indium tin oxide‐polyethylene terephthalate (ITO‐PET) window as the current collector in a readily‐available electrochemical set‐up. The mechanism of Li metal nucleation strongly depends on the selected current densities (C/40 and 2C). After the deposition of the solid electrolyte interface (SEI), Li nucleates from mossy to needle morphology. Moreover, layer‐by‐layer growth of dead Li in voids is monitored by following its accumulation upon cycling. Dead Li deposits in residual hollow structures, especially when high current densities are applied. These optical observations are coupled with computer vision analyses to evaluate the average size of the Li deposits: smaller Li nuclei plate when high C‐rate is applied. The results here described provide insights into a new electrochemical cell concept that enables to elucidate the influence of spatial inhomogeneities of the lithophilic ITO‐PET surface on the mechanism of Li nucleation and plating. [ABSTRACT FROM AUTHOR]

In present work the properties of iron-doped indium tin oxide (ITO) films with reduced to 50 mass% indium oxide content prepared by co-sputtering of ITO and Fe2O3 targets and ITO and Fe3O4 targets in mixed argon–oxygen atmosphere were studied by various methods. The influence of different working gas flow rates, RF power of iron oxide targets, type of doping oxide and heat treatment temperatures on the electrical, optical, structural, and morphological properties of the films was characterized by means of four-point probe method, ultraviolet–visible (UV–Vis) spectroscopy, X-ray diffraction and atomic force microscopy. [ABSTRACT FROM AUTHOR]

Ever‐increasing emissions of anthropogenic carbon dioxide (CO2) cause global environmental and climate challenges. Inspired by biological photosynthesis, developing effective strategies NeuNlto up‐cycle CO2 into high‐value organics is crucial. Electrochemical CO2 reduction reaction (CO2RR) is highly promising to convert CO2 into economically viable carbon‐based chemicals or fuels under mild process conditions. Herein, mesoporous indium supported on multi‐walled carbon nanotubes (mp‐In@MWCNTs) is synthesized via a facile wet chemical method. The mp‐In@MWCNTs electrocatalysts exhibit high CO2RR performance in reducing CO2 into formate. An outstanding activity (current density −78.5 mA cm−2), high conversion efficiency (Faradaic efficiency of formate over 90%), and persistent stability (~30 h) for selective CO2‐to‐formate conversion are observed. The outstanding CO2RR process performance is attributed to the unique structures with mesoporous surfaces and a conductive network, which promote the adsorption and desorption of reactants and intermediates while improving electron transfer. These findings provide guiding principles for synthesizing conductive metal‐based electrocatalysts for high‐performance CO2 conversion. [ABSTRACT FROM AUTHOR]

Due to the increasing content of carbon dioxide (CO2) in the atmosphere and the greenhouse effect issue caused by the continuous carbon emissions, the conversion of CO2 into carbon-containing clean energy has become a current research hotspot in the fields of chemistry and materials. In this study, five indium-added Zn–Al–Inx electrocatalysts were prepared via a hydrothermal synthesis method. The catalysts were characterized using analysis techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) to determine their composition, structure, elemental composition and oxidation states, surface microstructure, specific surface area, and pore size. Furthermore, the electrochemical performance of these catalysts in CO2 reduction reaction (CO2RR) was investigated. Research results have revealed that the addition level of indium has a significant impact on the electrocatalytic performance of the catalysts. Among them, the Zn–Al–In0.2 hydroxide electrocatalyst with 0.2 mmol of indium addition exhibits excellent electrochemical performance in the electrocatalytic CO2RR, particularly in the production of carbon monoxide (CO). The CO faradaic efficiency (CO FE) for CO2 reduction to CO can reach up to 97.56% (−1.1 V vs. RHE), and its performance is maintained for at least 4.5 hours at −1.2 V vs. RHE. [ABSTRACT FROM AUTHOR]

Two new heteroleptic indium aminothiolate compounds [InClSC2H4N(Me)SC2H4]3[1] and [InSC2H4N(Me)SC2H4(C8H5F3NO)] [2] were synthesized by in situ salt metathesis reaction involving indium trichloride, aminothiol, and N,O-β-heteroarylalkenol ligands. The complexes were subsequently purified and thoroughly characterized by nuclear magnetic resonance (NMR) analysis, elemental studies, mass spectroscopy, and X-ray diffraction single crystal analysis that showed a trigonal bipyramidal coordination of In(III) in both complexes. Thermogravimetric analysis of [1] revealed a multistep decomposition pathway and the formation of In2S3 at 350 °C, which differed from the pattern of [2] due to the lower thermal stability of [1]. Compound [2] exhibited a three-step decomposition process, resulting in the formation of In2S3 at 300 °C. The Chemical Vapor Deposition (CVD) experiment involving compound [2] was conducted on the FTO substrate, resulting in the production of singular-phase In2S3 deposits. A comprehensive characterization of these deposits, including crystal structure analysis via X-ray diffraction (XRD), and surface topography examination through scanning electron microscopy (SEM) has been completed. The presence of In–S units was also supported by the Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and energy dispersive spectroscopy (EDS) of the as-deposited films. Moreover, the electronic structure and thermal properties of compound [2] were investigated through DFT calculations. Electron density localization analysis revealed that the highest occupied molecular orbital (HOMO) exhibited dense concentration at the aminothiolate moiety of the complex, while the lowest unoccupied molecular orbital (LUMO) predominantly resided at the N,O-β-heteroarylalkenolate ligand. Furthermore, our computational investigation has validated the formation of indium sulfide by elucidating an intermediate state, effectively identified through EI-MS analysis, as one of the plausible pathways for obtaining In2S3. This intermediate state comprises the aminothiolate ligand (LNS) coordinated with indium metal. [ABSTRACT FROM AUTHOR]

Trench defects in multi‐quantum wells (MQWs) have been considered as flawed structures that severely degraded the internal quantum efficiency (IQE) of light‐emitting diodes (LEDs) in the past. In this research, trench defects are innovatively utilized to enhance the efficiency of red InGaN LEDs. Specifically, dual‐color MQWs structures are applied to modulate trench defects. The upper red MQWs, grown on top of green MQWs with a high density of trench defects, exhibit a significant wavelength redshift of 68 nm and ≈ 6‐fold luminescence enhancement compared to those without intentionally introduced trench defects. Red InGaN LEDs with an IQE of 16.4% are achieved with this epitaxy growth strategy. Such wavelength redshift is attributed to the more indium incorporation due to the strain relaxation effect of trench defects. Moreover, the luminescence enhancement originates from the strong emission of the red MQWs inside trench defects, mainly attributed to strain relaxation and defect shielding by the wide and deep trenches. Achieving red emission by modulating trench defects is simple and reproducible without requiring additional substrate designs, which provides a novel way toward high‐efficiency red InGaN LEDs. [ABSTRACT FROM AUTHOR]

Electrochemical CO2 reduction reaction (CO2RR) provides a promising way for producing value‐added fuels and chemicals via renewable electricity. However, the dynamic reconstruction of electrocatalysts of atomic active sites hinders in‐depth understanding of catalytic mechanism and further industrial application, especially under ampere‐level current density conditions. In this work, electro‐induced crystallization is reported over an amorphous Indium hydroxide gel (In gel) catalyst, which generates active sites for efficient and selective CO2RR. Molecular dynamic calculation reveals the crystallization process can maintain amorphous In‐OH species on the surface while generating crystallized metallic In under electroreduction condition; structural characterizations prove that the derived partially crystallized In gel is stable consisting of amorphous/crystalline interface, even biased at a high polarization potential of −4 V versus reversible hydrogen electrode. The resultant partially crystalized In gel exhibits a highly selective CO2RR performance toward formate under an ampere‐level current density up to 1200 mA cm−2 simultaneously with 91.89% Faradaic efficiency, which can motivate a high formate generation rate of 20.55 mmol h−1 cm−2. The operando Raman spectroscopic and density functional theoretic results demonstrate the optimized adsorption of *HCOO intermediate for the enhanced formate activity and selectivity over the partially crystallized In gel. [ABSTRACT FROM AUTHOR]

The conversion efficiency of 800 nm, 65 fs radiation toward high-order harmonic generation (HHG) in laser-induced plasmas containing spherical and non-spherical nanoparticles (NPs) produced during the laser ablation of different metals in water using 1064 nm, 70 ps pulses was analyzed. Non-spherical NPs of different forms (triangle, cubic, bowtie, rod, rectangular, ellipsoid, etc.) were synthesized during the aging of some spherical NPs (In, Al, and Cu) in water. These NPs were then dried on the glass substrates and ablated to produce plasmas comprising nanostructured species of different morphologies. It was shown that harmonic generation in all synthesized non-spherical NPs was less efficient by a factor of at least five than in the initial spherical NP. Meanwhile, the spherical NPs that maintained the morphology state during aging (Ni, Ag, Mn, and Au) showed almost similar HHG conversion efficiency compared to the fresh spherical NPs. In all cases, the HHG conversion efficiency using spherical and non-spherical nanoparticles was notably larger compared to the atomic and ionic single-particle plasmas of the same elemental composition. NP plasmas demonstrated featureless harmonic distributions, contrary to the indium and manganese atomic/ionic plasmas, when the resonance enhancement of harmonics was observed. [ABSTRACT FROM AUTHOR]

Ultrathin flexible organic solar cells (OSCs) have garnered widespread attention in wearable electronic devices for their lightweight and excellent conformability. Silver nanowires (AgNWs) are one of the most widely used bottom electrodes because of their high conductivity and transmittance. However, the high roughness of AgNWs on the flexible substrate exerts adverse effects on device performance. To address this critical issue, a bilayer electron‐transport‐materials (ETMs) strategy consisting of an indium‐doped zinc oxide (IZO) and a pristine ZnO is developed. The IZO is utilized as the first layer of ETM, which can effectively fill voids in AgNWs to form a high‐conductive composite electrode. The ZnO is used as the second layer of ETM, facilitating charge extraction. The ultrathin flexible OSCs prepared based on the gradient bilayer ETMs can achieve a power conversion efficiency (PCE) of 16.1%, associated with improved mechanical stability, showing a PCE retention of 93% after 10 000 bending cycles (R = 1 mm) and 82% under 1000 compression (30%)‐release cycling test. To the best of knowledge, it's one of the highest efficiency for ultrathin (less than 10 μm) flexible OSCs based on the solution‐processed electrodes. This work will provide a new avenue for fabricating high‐performance and mechanically robust ultraflexible ITO‐free OSCs. [ABSTRACT FROM AUTHOR]

This paper shows a four‐order reduction of magnitude in sheet resistance for spin‐coating poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) onto polyvinylidene fluoride (PVDF) film for a final sheet resistance comparable to commercially available indium tin oxide‐ (ITO‐) coated PVDF film. The resulting PEDOT:PSS transparency is 10% less than the transparency for ITO:PVDF. This is done by the combination of four techniques from the literature including (i) varying layers, (ii) plasma etching, (iii) post‐treatment submersion in an ethylene glycol (EG) bath, and (iv) adding EG and a surfactant to the PEDOT:PSS solution. The PEDOT:PSS sheet resistance falls from over 3 megaohms/sq to between 600 and 150 ohms/sq depending on the number of layers. The one‐layer sample has a sheet resistance of 600 ohms/sq and an optical transparency of about 76%, and the five‐layer sample has a sheet resistance of 150 ohms/sq and an optical transparency of about 50%. These results reported here make PEDOT:PSS an attractive option for transparent piezoelectric micromachined ultrasonic transducer (PMUT) array applications. [ABSTRACT FROM AUTHOR]

Hexagonal MAB phases （h‐MAB） have attracted attention due to their potential to exfoliate into MBenes, similar to MXenes, which are predicted to be promising for Li‐ion battery applications. However, the high cost of synthesizing MBenes poses challenges for their use in batteries. This study presents a novel approach where a simple ball‐milling treatment is employed to enhance the purity of the h‐MAB phase Ti2InB2 and introduce significant indium defects, resulting in improved conductivity and the creation of abundant active sites. The synthesized Ti2InB2 with indium defects (VIn‐Ti2InB2) exhibits excellent electrochemical properties, particularly exceptional long‐cycle stability at current densities of 5 A g−1 (5000 cycles, average capacity decay of 0.0018%) and 10 A g−1 (15 000 cycles, average capacity decay of 0.093%). The charge storage mechanism of VIn‐Ti2InB2, involving a dual redox reaction, is proposed, where defects promote the In‐Li alloy reaction and a redox reaction with Li in the TiB layer. Finally, a Li‐ion full cell demonstrates cycling stability at 0.5 A g−1 after 350 cycles. This work presents the first accessible and scalable application of VIn‐Ti2InB2 as a Li‐ion anode, unlocking a wealth of possibilities for sustainable electrochemical applications of h‐MAB phases. [ABSTRACT FROM AUTHOR]

This paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application. Experimental data from an AlGaN/InGaN/GaN HEMT is used to validate the simulation results based on the Id-Vg curve and transconductance, demonstrating their close agreement. Subsequently, the study focuses on investigating the impact of varying device parameters namely Indium (In) proportion of InGaN, gate length, source to gate length (Lsg) and gate to drain length (Lgd), and InGaN layer thickness. Sequential analysis has been done for various device parameters as a function of frequency. The results indicate that the device exhibits optimal performance when configured with an Indium (In) proportion of 0.15, a gate length of 0.40μm, an InGaN layer thickness of 2 nm and Lsg and Lgd of 1.15 μm, and 1.15 μm respectively shows ft 15.36 GHz and fmax 37 GHz which is almost more than twice of the original calibrated device. These findings provide valuable insights for designing devices with enhanced performance. [ABSTRACT FROM AUTHOR]

Indium(III) complex of N-methyl-N-ethanol dithiocarbamato ligand has been synthesized and characterized by single crystal X-ray diffraction technique. The analysis reveals an aesthetically supramolecular layer that sits between adjacent molecules, resulting in indium atoms arranged as regular hexagons, like beehives. Several intermolecular interactions within the crystal were quantified using Hirshfeld surface analysis, which demonstrates H···H contacts as the most common type of interaction. Energy frameworks were constructed by using various intermolecular interaction energies to probe the stability and nature of the dominant energy in the complex. The growth morphology of the crystal was calculated using Dreiding forcefield and it shows that the morphologically dominant growth surfaces in vacuum are (0 0 2), (1 0 –1), (1 0 1), (0 1 1) and (1 1 0), respectively. The electronic structure and optical properties of the complex were explored using the Density Functional Theory (DFT), confirming it as a direct bandgap semiconductor with a predicted bandgap of 3.072 eV. The experimental optical gap is 3.38 eV. Optical anisotropic features of the complex, aligning with its monoclinic structure, were identified via analysis of the dielectric function across the [100], [010], and [001] crystallographic directions. The dielectric function's imaginary part was connected to electronic transitions, indicating at least five distinct interbond transitions, with the first one within the visible range. The refractive index, extinction coefficient, absorption coefficient, and reflectivity were evaluated, indicating low absorption in the visible spectrum and reflection in the 0–16 eV range. Consequently, the complex presents promising potential for photovoltaic applications. [ABSTRACT FROM AUTHOR]

In this study, the surface and textural properties as well as the catalytic performance of Ni/CeO2 and NiIn/CeO2 catalysts prepared by wet impregnation (WI) and deposition–precipitation (DP) are investigated. The addition of Ni (3.0 wt.%) resulted in a decrease in the specific surface area and pore volume in the case of the WI method, possibly due to a blockage of mesopores. A minimal addition of In (0.25 wt.%) caused a further decrease in the surface area in both cases. XRD analysis showed that Ni deposited on CeO2 by DP resulted in some lattice incorporation, affecting the crystallinity of the support. The H2-TPR profiles altered depending on the different ways of Ni and In introduction. STEM-EDS-derived elemental maps indicated that the Ni and NiIn particles deposited on CeO2 using the DP method were somewhat smaller than in the WI synthesis. A comprehensive CO-DRIFTS analysis proved a direct Ni-In interaction in bimetallic samples, leading to the formation of a surface NiIn alloy. Ni/CeO2 catalysts showed a higher activity in the process of dry reforming of methane (DRM) than the bimetallic counterparts at 650 °C, with the Ni_DP sample performing slightly better. However, the Ni_DP catalyst showed significant coking, which was drastically reduced by the addition of In. The agglomeration of Ni and/or NiIn particles during the 6 h DRM reaction somewhat impaired the catalyst performance. Overall, this study highlights the intricate relationship between the catalyst preparation, surface properties and catalytic performance in the DRM reaction and emphasizes the beneficial role of In addition in reducing the coking of the monometallic catalyst and the critical location and surface morphology of nickel nanoparticles decorated with indium and in contact with ceria. [ABSTRACT FROM AUTHOR]

Indium-based oxides are promising electrocatalysts for producing formate via CO2 reduction reaction, in which *OCHO is considered the key intermediate. Here, we identified that the *COOH pathway could be preferential to produce formate on In2O3 of In/In2O3 heterojunction due to the synergistic effect of oxygen species and vacancy. Specifically, *CO2 and *COOH were observed on In2O3 and related to formate production by in situ Raman spectroscopy. The theoretical calculations further demonstrated that the energy barrier of the *COOH formation on In2O3 was decreased in the presence of oxygen vacancy, similar to or lower than that of the *OCHO formation on the In surface. As a result, a formate selectivity of over 90% was obtained on prepared In/In2O3 heterojunction with 343 ± 7 mA cm-2 partial current density. Furthermore, when using a Si-based photovoltaic as an energy supplier, 10.11% solar--to--fuel energy efficiency was achieved. [ABSTRACT FROM AUTHOR]

Most of the global indium resources are from deposits associated with felsic rocks. Considering that the indium concentration in the average upper crust is extremely low, magmatic-hydrothermal processes play a critical role in the enrichment and mineralization of indium. However, the extraction efficiency of indium by magmatic fluids remains unclear. We performed experiments at 800 °C, 150 MPa and oxygen fugacity of Ni-NiO buffer to determine the partition coefficient of indium between aqueous fluids and granitic melts (D In f / m ). To counteract the rapid loss of indium into the noble metal container wall, the D In f / m were obtained by the method of local equilibrium between microscopic-sized fluid bubbles and surrounding silicate melt. The results show that indium has the highest fluid-melt partition coefficients of all metals investigated so far. At a constant aluminum saturation index (ASI = 1.07–1.12), D In f / m correlates linearly with the total Cl concentration in the coexisting fluid (m Cl total ), increasing from 61 ± 11 (1σ) at m Cl total = 1.0 mol/kg H 2 O to 895 ± 105 (1σ) at m Cl total = 16 mol/kg H 2 O. When the HCl concentration in the solution increases from 0.13 to 0.49 mol/kg H 2 O at a fixed m Cl total = 2 mol/kg H 2 O, D In f / m increases parabolically from 129 ± 21 to 320 ± 24. The observed partitioning data suggest that indium was dominantly present as In(OH) 2 Cl in the low-HCl and In(OH)Cl 2 in high-HCl aqueous fluid at the experimental conditions. Numerical modeling indicates that the extraction efficiency of indium from S-type felsic magmas is very high (>85 %) and magmatic fluids may be the major source of indium for most indium deposits. Due to the high D In f / m values, fluid saturation and exsolution result in a sharp drop of indium concentration in both the residual melt and crystallized minerals, which makes the indium concentration in whole rock and minerals an indicator of fluid exsolution. [ABSTRACT FROM AUTHOR]

The realization of Janus monolayers presents an exciting opportunity to disrupt structural symmetry, opening up novel avenues in the realm of layered materials. While several ternary systems, comprising the group-III monochalcogenides, has been proposed for this purpose, the impact of oxygen interaction on the electronic, thermoelectric and optical characteristics of gallium and indium monochalcogenides has been observed. Interestingly, the concept of incorporating oxygen as a third element in ternary systems has not yet been explored extensively. Here we embark on the design and exploration of 2D A2OX (A = Ga, In and X = S, Se) monolayer through first-principles calculations. Our investigation includes the analysis of electronic band structure, optical and thermoelectric properties, revealing that Ga2OS, Ga2OSe and In2OS exhibit direct band nature. However, In2OSe is found to be metallic in unstrained condition. Moreover, the band gap in these materials can be fine-tuned through the application of tensile or compressive strain. Additionally, our analysis suggests strong optical absorption within the visible, and/or ultraviolet regions, depending on the specific system under consideration. Our findings reveal that Ga2OS and In2OS monolayers elevated power factors with application of tensile strain, rendering them as compelling candidates for applications in thermoelectric devices. [ABSTRACT FROM AUTHOR]

Thermal transport is of grave importance in many high-value applications. Heat dissipation can be improved by utilizing liquid metals as thermal interface materials. Yet, liquid metals exhibit corrosivity towards many metals used for heat sinks, such as aluminum, and other electrical devices (i.e., copper). The compatibility of the liquid metal with the heat sink or device material as well as its long-term stability are important performance variables for thermal management systems. Herein, the compatibility of the liquid metal Galinstan, a eutectic alloy of gallium, indium, and tin, with diamond coatings and the stability of the liquid metal in this environment are scrutinized. The liquid metal did not penetrate the diamond coating nor corrode it. However, the liquid metal solidified with the progression of time, starting from the second year. After 4 years of aging, the liquid metal on all samples solidified, which cannot be explained by the dissolution of aluminum from the titanium alloy. In contrast, the solidification arose from oxidation by oxygen, followed by hydrolysis to GaOOH due to the humidity in the air. The hydrolysis led to dealloying, where In and Sn remained an alloy while Ga separated as GaOOH. This hydrolysis has implications for many devices based on gallium alloys and should be considered during the design phase of liquid metal-enabled products. [ABSTRACT FROM AUTHOR]

Through the application of synthesis via molten indium flux, we have been able to expand the ternary Sc−Mn−Si system and the quaternary Sc−Mn−Al−Si system. Specifically, we report on five previously unknown chemical compounds, namely β‐ScMnSi2, Sc4+xMn4Si7–2x, Sc2Mn4Si5, Sc2Mn3Si4, and Sc4Mn2AlSi4. The compounds with the stoichiometries Sc2Mn4Si5, Sc2Mn3Si4, and Sc4Mn2AlSi4 have previously not been reported. We find that these crystallize in the V6Si5, Hf2Ru3Si4, and Ho4Ni2InGe4 structure types, respectively. For the ternary compounds with the stoichiometries of ScMnSi2 and Sc4+xMn4Si7–2x, we find clearly deviating structural solutions compared to earlier reports. β‐ScMnSi2 is found to crystallize in the monoclinic crystal system isostructural to a supercell of the MnTiSi2 structure and clearly deviating from the known orthorhombic α‐polymorph. The compound Sc4+xMn4Si7–2x is structurally very similar to Sc4Mn4Si7, but exhibits the P4/nmm space group instead of I4/mmm, and is related to the Zr4Co4Ge7 structure. Disorder between Si and Sc sites leads to the off‐stoichiometric composition, for which we found x=0.287(5). [ABSTRACT FROM AUTHOR]

Trivalent indium ions are not toxic like the common ions, and this implies that there are limited secondary pollution associated with their photoconversion processes. They are therefore a preferred choice for several applications. However, they are not used in their ionic form. Their salts are reacted with various organic ligands to form different trivalent complexes of indium for these applications. Herein, the use of different trivalent complexes as catalysts in organic synthesis are discussed. Their usage as a precursor of indium oxide, indium sulfide, indium tellurides and indium selenides are examined. In addition, their application as organic light-emitting diodes (OLEDs), sensor, photovoltaic and luminous materials are discussed. Finally, gaps and/or areas for future research are highlighted. [ABSTRACT FROM AUTHOR]

Oxygen vacancies (Vo) can significantly degrade the electrical properties of indium oxide (In2O3) thin films, thus limiting their application in the field of ultraviolet detection. In this work, the Vo is effectively suppressed by adjusting the Trimethylindium (TMIn) flow rate (fTMIn). In addition, with the reduction of the fTMIn, the background carrier concentration and the roughness of the film decrease gradually. And a smooth In2O3 thin film with roughness of 0.44 nm is obtained when the fTMIn is 5 sccm. The MSM photodetectors (PDs) are constructed based on In2O3 thin films with different fTMIn to investigate the opto-electric characteristics of the films. The dark current of the PDs is significantly reduced by five orders from 100 mA to 0.28 μA with the reduction of the fTMIn from 50 sccm to 5 sccm. In addition, the photo response capacity of PDs is dramatically enhanced. The photo-to-dark current ratio (PDCR) increases from 0 to 2589. Finally, the PD with the fTMIn of 5 sccm possesses a record-high responsivity of 2.53 × 103 AW−1, a high detectivity of 5.43 × 107 Jones and a high EQE of 9383 × 100%. Our work provides an important reference for the fabrication of high-sensitivity UV PDs. [ABSTRACT FROM AUTHOR]