151. Study of boron diffusion for p + emitter of large area N-type TOPCon silicon solar cells
- Author
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Jianhui Bao, Sanchuan Yang, Rui Jia, Ying Zhou, Aimin Liu, Shuai Jiang, Cao Yujia, Hui Qu, and Ke Tao
- Subjects
010302 applied physics ,Materials science ,Silicon ,business.industry ,Doping ,chemistry.chemical_element ,02 engineering and technology ,General Chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Boron trichloride ,Volumetric flow rate ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Optoelectronics ,General Materials Science ,Diffusion (business) ,0210 nano-technology ,business ,Boron ,Sheet resistance ,Common emitter - Abstract
Boron doped emitters prepared by thermal diffusion using boron trichloride (BCl3) have been adopted in N-type Tunnel Oxide Passivated Contact (TOPCon) silicon solar cells. In order to establish a proper diffusion process of p + emitter that matches to TOPCon solar cells fabrication, the influence of diffusion pressure, pre-deposition O2 flow rate and drive-in O2 flow rate on the doping profiles, sheet resistance, BSG thickness as well as the sheet resistance uniformity are carefully investigated. In addition, the impact of BSG thickness on the surface morphology and optical properties of the TOPCon cells are studied. The experimental results indicate that good uniformity of p + emitter can be obtained at low pressure (300 mbar) with acceptable sheet resistance. In addition, a p + emitter with thick BSG (> 50 nm) layer is very necessary, which can effectively protect the underneath emitter during the removal process of the wrap-around poly-Si. Finally, high efficiency over 22% is obtained for 244.32 cm2 n-type TOPCon solar cells based on the boron diffused emitter with the sheet resistance 70–90 ohm/sq., BSG thickness ~ 100 nm.
- Published
- 2020