151. Carbon doping induced peculiar transport properties of boron nitride nanoribbons p-n junctions.
- Author
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Liu, N., Gao, G. Y., Zhu, S. C., Ni, Y., Wang, S. L., Liu, J. B., and Yao, K. L.
- Subjects
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GREEN'S functions , *P-N junctions (Semiconductors) , *BORON nitride , *SEMICONDUCTOR junctions , *HAMILTON'S equations , *EIGENVALUE equations - Abstract
By applying nonequilibrium Green's function combined with density functional theory, we investigate the electronic transport properties of carbon-doped p-n nanojunction based on hexagonal boron nitride armchair nanoribbons. The calculated I-V curves show that both the center and edge doping systems present obvious negative differential resistance (NDR) behavior and excellent rectifying effect. At low positive bias, the edge doping systems possess better NDR performance with larger peak-to-valley ratio (∼105), while at negative bias, the obtained peak-to-valley ratio for both of the edge and center doping systems can reach the order of 107. Meanwhile, center doping systems present better rectifying performance than the edge doping ones, and giant rectification ratio up to 106 can be obtained in a wide bias range. These outstanding transport properties are explained by the evolution of the transmission spectra and band structures with applied bias, together with molecular projected self-consistent Hamiltonian eigenvalues and eigenstates. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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