151. Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells.
- Author
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Guo, Wanwu, Zhang, Liping, Meng, Fanying, Bao, Jian, Wang, Dongliang, Liu, Jinning, Feng, Zhiqiang, Verlinden, Pierre J., and Liu, Zhengxin
- Subjects
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HYDROGENATED amorphous silicon , *FOURIER transform infrared spectroscopy , *HETEROJUNCTIONS , *SOLAR cells , *ELLIPSOMETRY - Abstract
The properties of hydrogenated amorphous silicon (a-Si:H) thin layers were studied by spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTIR) measurements to determine their effects on the surface passivation of crystalline silicon (c-Si) in heterojunction solar cells. It was demonstrated that the high bulk quality of a-Si:H layers with denser structures was not sufficient for the passivation of c-Si surfaces in Silicon Heterojunction (SHJ) solar cells, in which the passivation performance is strongly governed by the total hydrogen content ( CH) as a-Si:H layers are ultra-thin. High effective carrier lifetime and implied open-circuit voltage ( Voc,im), as well as low surface recombination velocity, were obtained at the appropriate CH values, and the optimal windows of CH and of the hydrogen content in the Si-H2 configuration ( C2) were determined to be 5.0 ∼ 8.5 and 2.9 ∼ 6.8 at.%, respectively. For CH values higher than 8.5 at.%, the passivation effect was degraded due to the deteriorated bulk properties of the a-Si:H layers. However, Voc,im decreased when CH was lower than 5.0 at.% because the number of H atoms was insufficient to saturate the dangling bonds at the a-Si:H/c-Si interface even though the a-Si:H layers had dense microstructures. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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