954 results on '"Groeseneken, Guido"'
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152. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
153. Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs
154. Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates
155. A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF
156. Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures
157. Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes
158. Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors`
159. Drain voltage dependent analytical model of tunnel field-effect transistors.
160. Zener tunneling in semiconductors under nonuniform electric fields.
161. Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor.
162. Thermal stability analysis and modelling of advanced perpendicular magnetic tunnel junctions
163. Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization.
164. Influence of absorbed water components on SiOCH low-k reliability.
165. Electron energy dependence of defect generation in high-k gate stacks.
166. Charge trapping in metal-ferroelectric-insulator-semiconductor structure with SrBi2Ta2O9/Al2O3/SiO2 stack.
167. Origin of substrate hole current after gate oxide breakdown.
168. Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing
169. Influence of absorbed water components on SiOCH low-k reliability
170. Calibration of the high-doping induced ballistic band-tails tunneling current with In0.53Ga0.47As Esaki diodes
171. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling
172. Reliability Study of Ferroelectric Al:HfO2Thin Films for DRAM and NAND Applications
173. Will Chips of the Future Learn How to Feel Pain and Cure Themselves?
174. From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration
175. Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors
176. ESD characterisation of a-IGZO TFTs on Si and foil substrates
177. vfTLP characteristics of ESD diodes in bulk si gate-all-around vertically stacked horizontal nanowire technology
178. Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures
179. 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration
180. Characteristics improvement of top-gate self-aligned amorphous indium gallium zinc oxide thin-film transistors using a dual-gate control
181. Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2
182. ESD ballasting of Ge FinFET ggNMOS devices
183. Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation
184. BTI reliability of InGaAs nMOS gate-stack: On the impact of shallow and deep defect bands on the operating voltage range of III-V technology
185. Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
186. Probing Local Potentials inside Metallic Nanopores with SERS and Bipolar Electrochemistry
187. Limitations on Lateral Nanowire Scaling Beyond 7-nm Node
188. Charge trapping in metal-ferroelectric-insulator-semiconductor structure with SrBi2Ta2O9/AI2O3/SiO2 stack
189. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides
190. Medium Frequency Physical Vapor Deposited AI203 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors
191. Ferroelectric Control of Magnetism in Ultrathin HfO2\Co\Pt Layers.
192. Oxide and interface degradation resulting from substrate hot-hole injection in metal-oxide-semiconductor field-effect transistors at 295 and 77 K.
193. Interpretation of frequency dependent capacitance-voltage curves of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors
194. Low-temperature formation of source-drain contacts in self-aligned amorphous oxide TFTs
195. Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region
196. BTI reliability from planar to FinFET nodes: Will the next node be more or less reliable?
197. Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2
198. Process Options Impact on ESD Diode Performance in Bulk FinFET Technology
199. Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination
200. vfTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowires
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