Search

Aluminum-substituted Yttrium iron garnet (Al-YIG) (Y3AlxFe5−xO12; x = 0.4, 0.8, 1.2, 1.6, and 2.0), samples were synthesized via an auto-combustion sol-gel technique. The obtained powder was heated at 950 °C, pressed into pellets, and sintered at 1200 °C. The sample microstructures were studied using field emission scanning electron microscopy (FESEM). The average grain size decreased from 0.46 μm at x = 0.4 to a minimum value of 0.33 μm at x = 2.0. The elemental composition of the samples was studied by energy dispersive x-ray (EDX), while the bulk density was measured by the Archimedes principle. Electrical and dielectric measurements were carried out using an Agilent impedance analyzer. Generally, the sample resistivity decreased with Al concentration. At 1 MHz frequency, the sample x = 0.4 has the highest resistivity of 2.19 × 105 Ωm, which decreases down to its minimum value of 1.75 × 104 Ωm at x = 2.0. The dielectric constant for all the samples decreased with frequency. For the sample x = 0.4, the ε′r decreased from 49.03 at 40 Hz to 8.08 at 1 MHz. The dielectric loss tangent, tan δ, decreased with increasing frequency, while it increased with Al substitution. Permeability values were calculated from permittivity data. The real permeability decreased from 1263.12 at x = 0.4 to 6.96 at x = 1.2 and decreased down to 11.74 at x = 2.0. The high dielectric constant, low resistivity, and low loss values of the samples indicate their suitability for miniaturization of radio frequency devices, antenna, and filter resonators. [ABSTRACT FROM AUTHOR]

This paper investigates the effect of the ratio of ammonium nitrate (AN) on the structural, microstructural, magnetic, and alternating current (AC) conductivity properties of barium hexaferrite (BaFe12O19). The BaFe12O19 were prepared by using the salt melt method. The samples were synthesized using different powder-to-salt weight ratio variations (1:3, 1:4, 1:5, 1:6 and 1:7) of BaCO3 + Fe2O3 and ammonium nitrate salt. The NH4NO3 was melted on a hot plate at 170 °C. A mixture of BaCO3 and Fe2O3 were added into the NH4NO3 melt solution and stirred for several hours using a magnetic stirrer under a controlled temperature of 170 °C. The heating temperature was then increased up to 260 °C for 24 hr to produce an ash powder. The x-ray diffraction (XRD) results show the intense peak of BaFe12O19 for all the samples and the presence of a small amount of the impurity Fe2O3 in the samples, at a ratio of 1:5 and 1:6. From the Fourier transform infra-red (FTIR) spectra, the band appears at 542.71 cm − 1 and 432.48 cm − 1 , which corresponding to metal–oxygen bending and the vibration of the octahedral sites of BaFe12O19. The field emission scanning electron microscope (FESEM) images show that the grains of the samples appear to stick each other and agglomerate at different masses throughout the image with the grain size 5.26, 5.88, 6.14, 6.22, and 6.18 µm for the ratios 1:3, 1:4, 1:5, 1:6, and 1:7 respectively. From the vibrating sample magnetometer (VSM) analysis, the magnetic properties of the sample ratio at 1:3 show the highest value of coercivity Hc of 1317 Oe, a saturation magnetization Ms of 91 emu/g, and a remnant Mr of 44 emu/g, respectively. As the temperature rises, the AC conductivity is increases with an increase in frequency. [ABSTRACT FROM AUTHOR]

Purpose The purpose of this paper is to analyse the operation of p-type side gate junctionless silicon transistor (SGJLT) in accumulation region through experimental measurements and 3-D TCAD simulation results. The variation of electric field components, carrier’s concentration and valence band edge energy towards the accumulation region is explored with the aim of finding the origin of SGJLT performance in the accumulation operational condition.Design/methodology/approach The device is fabricated by atomic force microscopy nanolithography on silicon-on-insulator wafer. The output and transfer characteristics of the device are obtained using 3-D Technology Computer Aided Design (TCAD) Sentaurus software and compared with experimental measurement results. The advantages of AFM nanolithography in contact mode and Silicon on Insulator (SOI) technology were implemented to fabricate a simple structure which exhibits the behaviour of field effect transistors. The device has 200-nm channel length, 100-nm gate gap and 4 μm for the distance between the source and drain contacts. The characteristics of the fabricated device were measured using an Agilent HP4156C semiconductor parameter analyzer (SPA). A 3-D TCAD Sentaurus tool is used as the simulation platform. The Boltzmann statistics is adopted because of the low doping concentration of the channel. Hydrodynamic model is taken to be as the main transport model for all simulations, and the quantum mechanical effects are ignored. A doping dependent Masetti mobility model was also included as well as an electric field dependent model with Shockley–Read–Hall (SRH) carrier recombination/generation.Findings We have obtained that the device is a normally on state device mainly because of the lack of work functional difference between the gate and the channel. Analysis of electric field components’ variation, carrier’s concentration and valence band edge energy reveals that increasing the negative gate voltage drives the device into accumulation region; however, it is unable to increase the drain current significantly. The positive slope of the hole quasi-Fermi level in the accumulation region presents mechanism of carriers’ movement from source to drain. The influence of electric field because of drain and gate voltage on charge distribution explains a low increasing of the drain current when the device operates in accumulation regime.Originality/value The proposed side gate junctionless transistors simplify the fabrication process, because of the lack of gate oxide and physical junctions, and implement the atomic force microscopy nanolithography for fabrication process. The optimized structure with lower gap between gate and channel and narrower channel would present the output characteristics near the ideal transistors for next generation of scaled-down devices in both accumulation and depletion region. The presented findings are verified through experimental measurements and simulation results. [ABSTRACT FROM AUTHOR]

Abstract: Possible soaking-time effects on the magnetic and microstructural properties of polycrystalline samples of Ni0.5Zn0.5Fe2O4 have been studied. Nanosize powder produced by mechanical alloying was sintered at 800°C with various soaking times. All samples showed the signature peak of Ni0.5Zn0.5Fe2O4 even with one hour of soaking time. The size distributions show a slow growth of microstructural evolution related to density, porosity and also to the magnetic hysteresis loops. Within these distributions it is observed that the formation of multi-domains is not possible and probably there are the regions of superparamagnetic and single-domain grains. From the permeability studies, it is believed that the rise of the magnetic moment on the B sites give rise to the total saturation magnetization with increase of soaking time. The hysteresis loop of one-hour soaking time showed paramagnetic behavior dominating while longer soaking times showed ferromagnetic behavior starting to dominate. The coercivity was observed to increase with soaking time, signaling the increase of the anisotropy fields which was attributed to the shape anisotropy and also to the magnetocrystalline anisotropy. By correlating the morphology, phase analysis, permeability and hysteresis loops results, it is believed that there was an increase in number of crystalline-growth regions which together formed a total mass of mixed superparamagnetic and ferromagnetic grains with the latter starting to dominate the samples. [Copyright &y& Elsevier]

In this paper the effect of sintering temperature on NiZnFeO is examined closely. The evolution of toward magnetically ordered materials was to be tracked with the parallel evolving microstructure subjected to sintering temperatures in an ascending order. The starting powder of NiZnFeO was prepared via mechanical alloying and later molded into toroidal samples. After each sintering, we observed the resulting changes in the materials. The XRD data showed a single phase being formed as early as 600 °C and the peak intensity was increasing with the sintering temperature indicating an increase in the degree of crystallinity. The BH hysteresis loops showed the evolution from paramagnetism to moderate ferromagnetism to strong ferromagnetism with microstructural changes. For lower sintering temperatures, the samples showed paramagnetic behavior dominating the samples. As sintering temperature increased, paramagnetic states decreased and, at 900 °C, a moderately ferromagnetic state appeared. Sintering at 1000 °C produced a strongly ferromagnetic state giving a well-formed sigmoid-shape hysteresis loop. [ABSTRACT FROM AUTHOR]

Abstract: Ni0.5Zn0.5Fe2O4 has been synthesized using mechanical alloying method with two variables (milling time and ball-to-powder weight ratio (BPR)) were varied in order to study its effect on the magnetic properties of the material. The effects of these two variables were studied using XRD, SEM, TEM and later by impedance analyzer with the frequency range from 1MHz to 1.8GHz. The results obtained however show that there are no significant trends to relate the milling time and BPR with the permeability and losses of the material studied. After being sintered at 1150°C, all the effects of alloying process seem to diminish. [Copyright &y& Elsevier]

The analysis and optimal design of a multi-layered microstrip sensor for measuring moisture content of rice grain are described. The microstrip sensing structure consists of three layers: substrate, protective layer and semi-infinite grain medium. The effective dielectric constant, characteristic impedance and attenuation or insertion loss of this structure are calculated at various moisture contents with respect to the thickness of the protective layer thickness. The sensor is operated at 9 GHz and is suitable for a broad range of moisture contents (MC) ranging from 10% to 30% (wet basis). This study investigated the optimal thickness of the protective layer for suitable sensitivity, the thickness of grain medium which can be consider as semi-infinite thickness, the effect of kernel density and loading method. The experimental results for the attenuation of the signal at various moisture contents agree reasonably with the theoretical prediction however for better accuracy, the compactness of grain medium should be observed. The effect of air inside the medium and compactness of the material under the test has been studied and the errors of ±0.16 dB have been calculated for the measured reflected attenuation of the sensor. The overall accuracy of the sensor is about ±1.5% moisture content as compared to oven drying method. [Copyright &y& Elsevier]

Indium antimonide nanowires were synthesized by electrochemical deposition using anodic aluminum oxide template in the presence of gold film as conductive layers. Field emission scanning electron microscopy and energy dispersive X-ray spectrometry measurements were carried out to investigate the effect of adhesive insulated tape covered below the conductive layer. Results showed that the anodic aluminum oxide template covered with insulating tapes had better morphology with less presence of overgrown rough film on the topside of the anodic aluminum oxide template and it exhibited a smoother nanowire sidewall as compared to the uncovered ones. Additionally, the unique properties of anodic aluminum oxide were controllable pore diameter with a narrow size distribution at some intervals. It was evident from the energy dispersive X-ray spectrum that the nanowires synthesized from the covered template condition exhibited better InSb composition and stoichiometric ratio compared to the uncovered template condition.

Synthesis of nanocrystalline strontium ferrite (SrFe 12 O 19 ) via sol-gel is sensitive to its modification parameters. Therefore, in this study, an attempt of regulating the pH as a sol-gel modification parameter during preparation of SrFe 12 O 19 nanoparticles sintered at a low sintering temperature of 900 °C has been presented. The relationship of varying pH (pH 0 to 8) on structural, microstructures, and magnetic behaviors of SrFe 12 O 19 nanoparticles were characterized by X-ray diffraction (XRD), field emission scanning microscope (FESEM), and vibrating sample magnetometer (VSM). Varying the pH of precursor exhibited a strong effect on the sintered density, crystal structure and magnetic properties of the SrFe 12 O 19 nanoparticles. As the pH is 0, the SrFe 12 O 19 produced relatively largest density, saturation magnetization, M s , and coercivity, H c , at a low sintering temperature of 900 °C. The grain size of SrFe 12 O 19 is obtained in the range of 73.6 to 133.3 nm. The porosity of the sample affected the density and the magnetic properties of the SrFe 12 O 19 ferrite. It is suggested that the low-temperature sintered SrFe 12 O 19 at pH 0 displayed M s of 44.19 emu/g and H c of 6403.6 Oe, possessing a significant potential for applying in low-temperature co-fired ceramic permanent magnet.

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed and optimized in the present work compared to our previous works. The output, transfer characteristics and drain conductance of both structures were compared. The trend for both devices found to be the same but differences in subthreshold swing, 'on/off' ratio, and threshold voltage were observed. The devices are 'on' state when performing as the pinch off devices. The positive gate voltage shows pinch off effect, while the negative gate voltage was unable to make a significant effect on drain current. The charge transmission in devices is also investigated in simple model according to a junctionless transistor principal.