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An enterogenous cyst of the spinal canal has the interior wall composed of tissue that is similar to the epithelium of the digestive or respiratory organ system, and is considered to be produced by a developmental abnormality in the early embryonal period. This is a rare disease, and this time we have experienced a case of an enterogenous cyst, occurring in the cervical canal, with a favorable course with improvement of symptoms after an operation.The case is a 13-year-old female complaining of numbness and weakness of the right hand, weakness of the right lower limb, and disturbance of gait. Present illness revealed stretch gymnastics from the beginning of December. She developed upper back pain, then pain in the ulnar side of the right hand, weakness in the right hand and lower limb, inability to stand up, and disturbance of urination. She was admitted as an emergency on 31 Dec. From the findings of myelography, CTM and MRI, an intradural extramedullary cystic tumor was suspected. Total excision was attempted from the posterior approach, but the wall ruptured and the tumor reduced. Only the wall was excised, the pathological examination revealed irregular papillary tissue composed of a single cubical-cylindrical epithelium, or partly stratified arrangement with cilia, suggesting an enterogenous cyst. At present she is back to school.

We experienced a case of intramedullary spinal cord tumor (astrocytoma). The patiant's chief complaint was disturbance of elevation of the left shoulder.In the past, intramedullary astrocytomas have often been treated with biopsy or subtotal removal. But, in low grade astrocytomas, certain tumors have well-defined cleavage planes between their margin and that of the normal spinal cord, therefore, are appropriate for removal.We have succeeded in removing almost all of the tumor.M. R. I, has been useful for preoperative diagnosis.

A method for fabricating stable and low‐stress tantalum films, suitable for absorbers of x‐ray masks, by dc‐bias, rf magnetron sputtering is presented. The superiority of Xe over Ar as a working gas is demonstrated. The stress‐vs‐bias‐voltage curve has a plateau, where the film stresses are low and constant over the bias voltage ranging from −15 to 20 V. The plateau stresses vary linearly with both the working Xe pressure and the substrate temperature with slopes of 1.2×1010 dyn/cm2 Pa and 8.6×106 dyn/cm2 deg, respectively. By control of the pressure and the temperature, stresses of (3±2)×108 dyn/cm2 are achieved. The Ta film which is stable under a heat treatment up to 300 °C is obtainable when it is deposited at 220 °C and then annealed at 220 °C for 1 h. The density of the films is (15.0±0.5) g/cm3. By x‐ray diffraction the films are found to be in a mixture of the α‐Ta phase and the β‐Ta phase. Ta patterns of 0.15 μm in width were fabricated.