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435 results on '"Hu, Zhongqiang"'

151. Photovoltaic effect of ITO/Bi3.15Nd0.85Ti3O12/Pt heterojunction structure.

Author

Liu, Xiaolian, Wang, Guodong, Xu, Yonghao, Wu, Jun, Hu, Zhongqiang, and Lu, Shiqi

Subjects
PHOTOVOLTAIC effect, HETEROJUNCTIONS, MAGNETRON sputtering, SOL-gel processes, BISMUTH, BARIUM titanate
Abstract

ITO/BNT/Pt heterojunction structure has been prepared by sol-gel method combined with dc magnetron sputtering. The BNT (Bi3.15Nd0.85Ti3O12) films were polycrystalline with typical ferroelectric hysteresis. The ITO/BNT/Pt structure displayed photovoltaic properties with a Voc of about 0.28 V and a photocurrent of 2.4 nA. After being polarized by a + 4 V pulse, at the voltage of 0.1 V, the current was 3 × 10−8 A, while it was −1 × 10−9 A after being polarized by a −4 V pulse. This demonstrated the depolarization field of the BNT films played a significant role in the I–V properties of the ITO/BNT/Pt structure. Therefore, we speculated the depolarization field had influenced the photovoltaic properties. [ABSTRACT FROM AUTHOR]

Published
2019
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153. Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices

Author

Guan, Mengmeng, primary, Wang, Lei, additional, Zhao, Shishun, additional, Zhou, Ziyao, additional, Dong, Guohua, additional, Su, Wei, additional, Min, Tai, additional, Ma, Jing, additional, Hu, Zhongqiang, additional, Ren, Wei, additional, Ye, Zuo-Guang, additional, Nan, Ce-Wen, additional, and Liu, Ming, additional

Published
2018
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155. Magnetic Anisotropy: Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy (Adv. Mater. 30/2018)

Author

Zhao, Shishun, primary, Wang, Lei, additional, Zhou, Ziyao, additional, Li, Chunlei, additional, Dong, Guohua, additional, Zhang, Le, additional, Peng, Bin, additional, Min, Tai, additional, Hu, Zhongqiang, additional, Ma, Jing, additional, Ren, Wei, additional, Ye, Zuo-Guang, additional, Chen, Wei, additional, Yu, Pu, additional, Nan, Ce-Wen, additional, and Liu, Ming, additional

Published
2018
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157. Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy

Author

Zhao, Shishun, primary, Wang, Lei, additional, Zhou, Ziyao, additional, Li, Chunlei, additional, Dong, Guohua, additional, Zhang, Le, additional, Peng, Bin, additional, Min, Tai, additional, Hu, Zhongqiang, additional, Ma, Jing, additional, Ren, Wei, additional, Ye, Zuo‐Guang, additional, Chen, Wei, additional, Yu, Pu, additional, Nan, Ce‐Wen, additional, and Liu, Ming, additional

Published
2018
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162. Low voltage induced reversible magnetoelectric coupling in Fe3O4 thin films for voltage tunable spintronic devices

Author

Zhang, Le, primary, Hou, Weixiao, additional, Dong, Guohua, additional, Zhou, Ziyao, additional, Zhao, Shishun, additional, Hu, Zhongqiang, additional, Ren, Wei, additional, Chen, Mingfeng, additional, Nan, Ce-Wen, additional, Ma, Jing, additional, Zhou, Hua, additional, Chen, Wei, additional, Ye, Zuo-Guang, additional, Jiang, Zhuang-De, additional, and Liu, Ming, additional

Published
2018
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163. Morphotropic phase boundary and high temperature dielectric, piezoelectric, and ferroelectric properties of (1-x)Bi(Sc3/4In1/4)O3-xPbTiO3 ceramics.

Author

Hu, Zhongqiang, Chen, Jianguo, Li, Meiya, Li, Xiaotian, Liu, Guoxi, and Dong, Shuxiang

Subjects
*PIEZOELECTRIC ceramics, *PIEZOELECTRIC devices, *TRANSDUCERS, *ACTUATORS, *CERAMICS
Abstract

Piezoelectric ceramic (1 - x)Bi(Sc3/4In1/4)O3-xPbTiO3 (BSIPT) (0.45 ≤ x ≤ 0.70) solid solutions near the morphotropic phase boundary (MPB) were developed for high temperature piezoelectric transducer and actuator applications. It was found that the MPB composition of BSIPT ceramics was in the vicinity of x = 0.6, where it had relatively small tolerance factor t = 0.901 resulting in a high TC of 457 °C, and also optimal properties such as the high Pr = 25.4 μC/cm2, &eh;r = 1153, d33 = 201 pC/N, kp = 0.34, and the low Ec = 23.5 kV/cm. Measurements also showed that the depoling temperature was 360 °C, about 200 °C higher than that of commercialized PZT ceramics, which indicated good temperature stability. BSIPT ceramics are promising candidates for high temperature applications. [ABSTRACT FROM AUTHOR]

Published
2011
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167. Acoustically actuated ultra-compact NEMS magnetoelectric antennas

Author

Nan, Tianxiang, primary, Lin, Hwaider, additional, Gao, Yuan, additional, Matyushov, Alexei, additional, Yu, Guoliang, additional, Chen, Huaihao, additional, Sun, Neville, additional, Wei, Shengjun, additional, Wang, Zhiguang, additional, Li, Menghui, additional, Wang, Xinjun, additional, Belkessam, Amine, additional, Guo, Rongdi, additional, Chen, Brian, additional, Zhou, James, additional, Qian, Zhenyun, additional, Hui, Yu, additional, Rinaldi, Matteo, additional, McConney, Michael E., additional, Howe, Brandon M., additional, Hu, Zhongqiang, additional, Jones, John G., additional, Brown, Gail J., additional, and Sun, Nian Xiang, additional

Published
2017
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170. Low-damping flexible Y3Fe5O12thin films for tunable RF/microwave processorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c9mh01782h

Author

ZhaoThese authors contributed equally to this work., Yanan, Li, Yaojin, Zhou, Ziyao, Peng, Renci, Zhu, Shukai, Yao, Mouteng, Peng, Bin, Zhao, Yifan, Cheng, Yuxin, Tian, Bian, Hu, Zhongqiang, Ye, Zuo-Guang, Jiang, Zhuangde, and Liu, Ming

Abstract

The tunable range of RF/microwave devices is limited not only due to the difficulty in growing high-quality magnetic oxide thin films but also because of their low magnetostrictive coefficient as in Y3Fe5O12(YIG) thin films. In this work, we have fabricated flexible YIG thin films by using pulsed laser deposition (PLD) technology, which exhibit a low-damping constant (2.67 × 10−4) and well-established magnetic properties suitable for RF/microwave materials. A noticeable ferromagnetic resonance (FMR) field shift of 180 Oe was obtained along the out-of-plane direction viaa flexible tunable factor f(R), which results in a frequency shift as high as 550 MHz. The result shows a greater FMR tuning than that induced by ferroelectric single crystals. At the same time, a systematic theoretical framework for tuning FMR characteristics was presented for the flexible YIG/mica thin films, which would provide an effective tuning method for other flexible magnetic oxides with low magnetostrictive coefficients. Last but not least, a flexible coplanar waveguide (CPW) integrated with the flexible YIG thin films shows excellent microwave magnetic stability and fatigue-resistant behavior. It would open a new door for further applications, such as flexible spiral detectors and high-frequency signal processors in the near future.

Published
2020
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171. Voltage control of perpendicular magnetic anisotropy in (Co/Pt)3/Pb(Zn1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures at room temperature.

Author

Peng, Bin, Feng, Mengmeng, Zhang, Yijun, Zhou, Ziyao, Hu, Zhongqiang, and Liu, Ming

Subjects
VOLTAGE control, PERPENDICULAR magnetic anisotropy, HETEROSTRUCTURES, FERROMAGNETIC materials, FERROELECTRIC materials, MAGNETIC coupling
Abstract

Voltage control of perpendicular magnetic anisotropy (PMA) in ferromagnetic/ferroelectric multiferroic heterostructures is a promising method to enable high density and low power perpendicular magnetic information storage. In this study, we successfully achieved large voltage tuning of PMA at room temperature in (Co/Pt)3/Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) multiferroic heterostructures. Voltage tuning of magnetic anisotropy and the magnetoelectric coupling effect has been qualitatively studied by ferromagnetic resonance, and the multiferroic heterostructure could be reversibly flipped between two distinct PMA states under zero or high electric fields. During the linear piezo-strain response of PZN-PT, the multiferroic heterostructures exhibit small magnetoelectric coupling and the electric field-induced magnetic anisotropy field was about 295 Oe. During the electric field-induced phase transition of PZN-PT, voltage tuning of PMA enhanced more than two times that of the first linear region and the electric field-induced magnetic anisotropy field increased to 634 Oe. Finally, this magnetoelectric coupling was enhanced to 672 Oe by applying 12 kV/cm, corresponding to a large magnetoelectric coupling coefficient up to 56 Oe·cm/kV. Benefiting from the giant strain response during voltage-induced phase transition in PZN-PT, voltage tuning of PMA in those multiferroic heterostructures is a promising candidate for power-efficient magnetic memories. [ABSTRACT FROM AUTHOR]

Published
2018
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173. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

Author

Hu, Zhongqiang, primary, Wang, Xinjun, additional, Nan, Tianxiang, additional, Zhou, Ziyao, additional, Ma, Beihai, additional, Chen, Xiaoqin, additional, Jones, John G., additional, Howe, Brandon M., additional, Brown, Gail J., additional, Gao, Yuan, additional, Lin, Hwaider, additional, Wang, Zhiguang, additional, Guo, Rongdi, additional, Chen, Shuiyuan, additional, Shi, Xiaoling, additional, Shi, Wei, additional, Sun, Hongzhi, additional, Budil, David, additional, Liu, Ming, additional, and Sun, Nian X., additional

Published
2016
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174. Integrated Magnetics and Multiferroics for Compact and Power-Efficient Sensing, Memory, Power, RF, and Microwave Electronics

Author

Lin, Hwaider, primary, Gao, Yuan, additional, Wang, Xinjun, additional, Nan, Tianxiang, additional, Liu, Ming, additional, Lou, Jing, additional, Yang, Guomin, additional, Zhou, Ziyao, additional, Yang, Xi, additional, Wu, Jing, additional, Li, Ming, additional, Hu, Zhongqiang, additional, and Sun, Nian Xiang, additional

Published
2016
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175. Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

Author

Nan, Tianxiang, primary, Emori, Satoru, additional, Peng, Bin, additional, Wang, Xinjun, additional, Hu, Zhongqiang, additional, Xie, Li, additional, Gao, Yuan, additional, Lin, Hwaider, additional, Jiao, Jie, additional, Luo, Haosu, additional, Budil, David, additional, Jones, John G., additional, Howe, Brandon M., additional, Brown, Gail J., additional, Liu, Ming, additional, and Sun, Nian, additional

Published
2016
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177. Low-Voltage-Manipulating Spin Dynamics of Flexible Fe3O4Films through Ionic Gel Gating for Wearable Devices

Author

Hou, Weixiao, Zhou, Ziyao, Zhang, Le, Zhao, Shishun, Peng, Bin, Hu, Zhongqiang, Ren, Wei, Ye, Zuo-Guang, Jiang, Zhuang-De, and Liu, Ming

Abstract

Mechanical flexible electronic/spintronic devices have shown enormous application potential to impact our daily life. Here, an in situ low-voltage-controlled flexible field-effect transistor structure was exploited, which consists of a support layer (mica), functional layer (Fe3O4), and control layer (ionic gel). By applying a low voltage (1.5 V) on the ionic gel, the spin-dynamic properties of the function layer were manipulated and a reversible, nonvolatile 345 Oe ferromagnetic resonance field (Hr) shift was achieved, which corresponds to a large magnetoelectric (ME) coefficient of 230 Oe/V. In addition, a reversible 126 Oe Hrshift (84 Oe/V) was obtained when the layers were bent at curvature radius r= 15 mm. The ME tunability could be attributed to the E-field induced ionic transformation between Fe2+and Fe3+at the interface via electrostatic induction. This sandwich structure shows an excellent and effective ionic gel gating system and paves the way for low-voltage-tunable, nonvolatile, and flexible spintronic devices such as memory devices, sensors, and logical devices.

Published
2019
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187. Low-Voltage Control of (Co/Pt)xPerpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics

Author

Zhao, Shishun, Zhou, Ziyao, Li, Chunlei, Peng, Bin, Hu, Zhongqiang, and Liu, Ming

Abstract

The trend of mobile Internet requires portable and wearable devices as bio-device interfaces. Electric field control of magnetism is a promising approach to achieve compact, light-weight, and energy-efficient wearable devices. Within a flexible sandwich heterostructure, perpendicular magnetic anisotropy switching was achieved vialow-voltage gating control of an ionic gel in mica/Ta/(Pt/Co)x/Pt/ionic gel/Pt, where (Pt/Co)xacted as a functional layer. By conducting in situVSM, EPR, and MOKE measurements, a 1098 Oe magnetic anisotropy field change was determined at the bending state with tensile strain, corresponding to a magnetic anisotropy energy change of 3.16 × 105J/m3and a giant voltage tunability coefficient of 0.79 × 105J/m3·V. The low voltage and strain dual control of magnetism on mica substrates enables tunable flexible spintronic devices with an increased degree of manipulation.

Published
2018
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188. Low voltage induced reversible magnetoelectric coupling in Fe3O4thin films for voltage tunable spintronic devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c8mh00763b

Author

ZhangL. Zhang, Le, Hou, W. X., work., G. H. Dong contributed equally to this, Hou, Weixiao, Dong, Guohua, Zhou, Ziyao, Zhao, Shishun, Hu, Zhongqiang, Ren, Wei, Chen, Mingfeng, Nan, Ce-Wen, Ma, Jing, Zhou, Hua, Chen, Wei, Ye, Zuo-Guang, Jiang, Zhuang-De, and Liu, Ming

Abstract

The ongoing demand for efficient and low-energy consumption spintronic devices has motivated the idea of manipulating magnetism by ionic liquid (IL) electrolyte gating at low voltages. Although magnetoelectric (ME) coupling has already been realized in some field-effect-transistor (FET) structures, some vital parameters such as giant ME coupling coefficient, excellent reversibility and low gating voltage seldom come at the same time, which greatly suppresses industrialization. Here we demonstrate a large 552 Oe spin dynamics modulation of Fe3O4thin films induced at a gating voltage of Vg= +1.5 V in an IL-gated Au/[DEME]+[TFSI]−/Fe3O4/MgO heterostructure with good reversibility up to 80 cycles, giving rise to a high ME coefficient of 368 Oe V−1. Such a large ME tunability under low Vgcould be attributed to the electric field (E-field) induced ionic transformation between Fe2+and Fe3+at the interface. The tiny thickness change (∼2 angstrom) and roughness change of Fe3O4films under Vg= +1.5 V illustrated by in situX-ray reflection (XRR) give a reasonable explanation of the outstanding reversible property. Interestingly, it is found that the Verwey transition temperature of Fe3O4has a strong dependence on Vg, revealing the potential of IL gating control of the intrinsic spin ordering inside magnetic films. This work drives forward the low-voltage induced reversible ME coupling to high-performance spintronic devices.

Published
2018
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199. Ferroelectric PLZT thick films grown by poly(1-vinylpyrrolidone-co-vinyl acetate) (PVP/VA)-modified sol–gel process.

Author

Hu, Zhongqiang, Ma, Beihai, Li, Meiya, Koritala, Rachel E., and Balachandran, Uthamalingam

Subjects
*FERROELECTRIC materials, *THICK films, *POVIDONE, *CAPACITORS, *SOL-gel processes
Abstract

We report the growth of ferroelectric Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) thick films using a poly(1-vinylpyrrolidone-co-vinyl acetate) (PVP/VA)-modified sol–gel process. A per-coating thickness of ≈0.66 μm has been demonstrated using PVP/VA-modified solution, which is more than doubled that of the PLZT films grown by PVP-modified method, and nearly 6 times the per-coating thickness of films prepared by conventional sol–gel process. PLZT thick films grown on LNO/Ni substrates exhibited denser microstructure, higher remanent polarization (11 μC/cm 2 ) and dielectric tunability (45%), lower leakage current density (≈1.2 × 10 −8 A/cm 2 ), and higher breakdown strength (≈1.6 MV/cm) than those for the samples grown on PtSi substrates. These results demonstrated great potential of using PVP/VA-modified sol–gel process for high power film capacitor applications. [ABSTRACT FROM AUTHOR]

Published
2016
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