151. Photovoltaic effect of ITO/Bi3.15Nd0.85Ti3O12/Pt heterojunction structure.
- Author
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Liu, Xiaolian, Wang, Guodong, Xu, Yonghao, Wu, Jun, Hu, Zhongqiang, and Lu, Shiqi
- Subjects
PHOTOVOLTAIC effect ,HETEROJUNCTIONS ,MAGNETRON sputtering ,SOL-gel processes ,BISMUTH ,BARIUM titanate - Abstract
ITO/BNT/Pt heterojunction structure has been prepared by sol-gel method combined with dc magnetron sputtering. The BNT (Bi
3.15 Nd0.85 Ti3 O12 ) films were polycrystalline with typical ferroelectric hysteresis. The ITO/BNT/Pt structure displayed photovoltaic properties with a Voc of about 0.28 V and a photocurrent of 2.4 nA. After being polarized by a + 4 V pulse, at the voltage of 0.1 V, the current was 3 × 10−8 A, while it was −1 × 10−9 A after being polarized by a −4 V pulse. This demonstrated the depolarization field of the BNT films played a significant role in the I–V properties of the ITO/BNT/Pt structure. Therefore, we speculated the depolarization field had influenced the photovoltaic properties. [ABSTRACT FROM AUTHOR]- Published
- 2019
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