151. ZnO nanowire transistor inverter using top-gate electrodes with different work functions
- Author
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Heon Jin Choi, Ryong Ha, Jong Keun Kim, Seongil Im, and Young Tack Lee
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Transistor ,Nanowire ,Overdrive voltage ,Threshold voltage ,law.invention ,law ,Optoelectronics ,Inverter ,Field-effect transistor ,business ,Low voltage ,Voltage - Abstract
ZnO-nanowire field effect transistors (FETs) with a top gate Al2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and −0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.
- Published
- 2011
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