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The growing demand for wearable and attachable displays has sparked significant interest in flexible quantum-dot light-emitting diodes (QLEDs). However, the challenges of fabricating and operating QLEDs on flexible substrates persist due to the lack of stable and low-temperature processable charge-injection/-transporting layers with aligned energy levels. In this study, we utilized NiOx nanoparticles that are compatible with flexible substrates as a hole-injection layer (HIL). To enhance the work function of the NiOx HIL, we introduced a self-assembled dipole modifier called 4-(trifluoromethyl)benzoic acid (4–CF3–BA) onto the surface of the NiOx nanoparticles. The incorporation of the dipole molecules through adsorption treatment has significantly changed the wettability and electronic characteristics of NiOx nanoparticles, resulting in the formation of NiO(OH) at the interface and a shift in vacuum level. The alteration of surface electronic states of the NiOx nanoparticles not only improves the carrier balance by reducing the hole injection barrier but also prevents exciton quenching by passivating defects in the film. Consequently, the NiOx-based red QLEDs with interfacial modification demonstrate a maximum current efficiency of 16.1 cd/A and a peak external quantum efficiency of 10.3%. This represents a nearly twofold efficiency enhancement compared to control devices. The mild fabrication requirements and low annealing temperatures suggest potential applications of dipole molecule-modified NiOx nanoparticles in flexible optoelectronic devices. [ABSTRACT FROM AUTHOR]

Organic light‐emitting diodes in tandem structures (TOLEDs) have long been an effective strategy to realize multifold increased electroluminescence (EL) efficiency relative to the single‐unit OLEDs, making TOLEDs promising candidates for lighting and display applications. Benefitted from the development of organic emitters, hybrid tandem OLEDs (HTOLEDs) composing two or more types of OLED emitters (phosphorescence, fluorescence, and thermally‐activated delayed fluorescence (TADF)) are developed. The different energy conversion processes of these emitters can facilitate manipulated exciton distribution inside the device, leading to enhanced device performance. On the other hand, different emission technologies can also be integrated to form another kind of hybrid tandem light‐emitting diodes (HTLED) thanks to the compatibility of OLEDs with quantum dot LEDs (QLEDs) and perovskite LEDs (PeLEDs). In this review, the performance of different types of HTOLEDs and HTLEDs is comprehensively reviewed particularly focusing on the exciton regulations and manipulation of emission spectra in the sub‐units, aiming to provide guidelines for the EL performance optimization of HTOLEDs. [ABSTRACT FROM AUTHOR]

Red to near-infrared organic light-emitting diodes (OLEDs) utilizing thermally activated delayed fluorescence (TADF) emitters continue to exhibit significant external quantum efficiency (EQE) roll-off at high luminance levels exceeding 1000 cd m−2, attributed to the relatively modest reverse intersystem crossing rate constant (kRISC) of approximately 103–104 s−1. This study presents a novel TADF molecule, TCPP-DTPA, featuring a structurally rigid π-stacked multiple donor/acceptor design. The enhanced donor/acceptor interactions minimize the energy gap between the singlet and triplet states of the TCPP-DTPA, allowing for an efficient RISC process with a high rate constant of 4.67 × 106 s−1. The OLED utilizing TCPP-DTPA demonstrates a peak EQE of 23.5% at a wavelength of 618 nm. Additionally, notable EQE values of 7.8% and 14.9% are observed at a luminance of 1000 cd m−2 for OLEDs without and with an energy-transfer assistant dopant in the emissive layer, respectively. This research contributes to enhancing the efficiency of high-brightness red TADF OLEDs, while also offering valuable insights for the optimization of molecular design and device engineering to mitigate the electroluminescence efficiency roll-off. [ABSTRACT FROM AUTHOR]

Perovskite light‐emitting diodes (LEDs) emitting in the pure‐red range of 630–640 nm show promise in meeting the requirement of the Rec.2100 standard for high‐resolution displays. However, the high‐performing LEDs (external quantum efficiency, EQE >20%) in the pure‐red range suffer from half‐life time (luminance drop to 50% of the initial luminance) of <1.6 h, resulting from the injection/transportation barrier and surface‐defects–induced charge carrier quenching. Herein, a bi‐ligand synergy strategy is developed to address the T50 issue: the introduction of iodide‐rich ligands with different chain length increases the vacancy formation energy of halogen ions and enhances the exciton binding energy, resulting in a high photoluminescence quantum yield of over 92%. The treated CsPbBrx/I3−x films exhibit 34‐fold improved material stability related to the control at continuous aging at 100 °C. As a result, pure‐red LEDs with CIE coordinates of (0.698, 0.301) approaching the Rec.2100 standard are reported. These pure‐red LEDs exhibit a low turn‐on voltage of 1.8 V, which is the lowest among reported pure‐red perovskite LEDs, and even 0.15 V lower than the optical bandgap energy (1.95 eV); and a maximum EQE of ≈21% with fourfold enhanced T50 relative to the best previous pure‐red perovskite LEDs. [ABSTRACT FROM AUTHOR]

In this paper, the contact behavior of silicone rubbers under spherical and conical indenters is investigated by simulation and experiment. The accuracy and applicability of seven hyperelastic constitutive models are discussed for the contact behavior of silicone rubbers. The stress-strain curves obtained by uniaxial tension/compression experiments are used to fit parameters of hyperelastic constitutive models. Indentation experiments are carried out to compare with simulation results. The fitting accuracy of constitutive models under different strains is analyzed. It is found that the constitutive parameters fitted by the uniaxial compression experiments are the best for simulating the contact behavior of silicone rubbers. [ABSTRACT FROM AUTHOR]

The energy barrier between the highest occupied molecular orbital (HOMO) of the emission layer (EML) and the hole transport layer material (HTL) restricts the development of carbon dots (CDs) based light‐emitting diodes (LEDs). Here, the fabrication of red fluorescent CDs (RCDs) by a one‐step solvothermal method is reported. These RCDs have a photoluminescence quantum yield (PLQY) of 47.97% and a full width at half maximum (FWHM) of 26 nm. This study also shows the RCDs‐based LEDs fabrication with Poly(9,9‐dioctylfluorene‐co‐N‐(4‐butylphenyl) diphenylamine (TFB) as HTL. In normal case, these devices are not able to work due to the large interfacial energy barrier between RCDs and TFB. While, the RCDs‐LEDs can overcome through interfacial energy barriers and achieve stable carrier injecting by a simple in situ electric excitation at the current of 50 mA cm−2. This work provides a new strategy to overcome the obstacle of mismatch of interfacial energy levels in the LEDs by an in situ electric excitation. [ABSTRACT FROM AUTHOR]