151. Ne+ ion sputtering effect on amorphous Ga-In-Zn-O thin-film surface investigated by high-resolution XPS.
- Author
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Kang, Se-Jun, Lee, Mi Ji, Baik, Jae Yoon, Kim, Hyeong-Do, Thakur, Anup, Shin, Hyun-Joon, Chung, JaeGwan, Lee, Eunha, Lee, Jaecheol, and Lee, JaeHak
- Subjects
AMORPHOUS semiconductors ,NEON ,SPUTTERING (Physics) ,METALLIC oxides ,SEMICONDUCTOR films ,X-ray photoelectron spectroscopy ,GALLIUM compounds - Abstract
The effect of Ne
+ ion sputtering on amorphous Ga-In-Zn-O (a-GIZO) thin films was investigated by using surface-sensitive, synchrotron-radiation-based, high-resolution X-ray photoelectron spectroscopy (XPS). a-GIZO thin films having different compositions (Ga2 O3 :In2 O3 :ZnO = 1:1:1, 2:2:1, 3:2:1, 4:2:1) were investigated. It was found out that the amounts of the In and Zn contents relative to that of Ga decreased noticeably after sufficient sputtering, and that there occurred a subgap state above the valence band maximum and metallic states at the In 3d and 4d core levels as well as at the Fermi edge. [ABSTRACT FROM AUTHOR]- Published
- 2011
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