658 results on '"Matsukura, F."'
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152. MgO/CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability
153. In-plane Anisotropy of a CoFeB-MgO Magnetic Tunnel Junction with Perpendicular Magnetic Easy Axis
154. Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm
155. Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
156. Chapter 7 - III–V-Based Ferromagnetic Semiconductors
157. Phase Transition in ��=2 Bilayer Quantum Hall State
158. Electric field control of thermal stability and magnetization switching in (Ga,Mn)As
159. Co/Pt Multilayer Based Reference Layer in Magnetic Tunnel Junctions for Nonvolatile Spintronics VLSIs
160. In-plane magnetic field dependence of electric field-induced magnetization switching
161. Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer
162. Publisher's Note: “Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission” [Appl. Phys. Lett. 101, 202402 (2012)]
163. Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission
164. Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
165. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
166. Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
167. CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions
168. Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions
169. Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
170. Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure
171. Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures
172. Magnetic Anisotropy Modulation in Ta/ CoFeB/ MgO Structure by Electric Fields
173. High mobility thin film transistors with transparent ZnO channels
174. Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As
175. Domain wall creep in (Ga,Mn)As
176. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
177. ChemInform Abstract: A Ferromagnetic III-V Semiconductor: (Ga,Mn)As
178. Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures
179. Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions
180. Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy
181. Spatially homogeneous ferromagnetism of (Ga, Mn)As
182. Anomalous Hall Effect in Field-Effect Structures of (Ga,Mn)As
183. Curie temperature versus hole concentration in field-effect structures ofGa1−xMnxAs
184. Electric double layer transistor with a (Ga,Mn)As channel
185. Electric-Field Modulation of Curie Temperature in (Ga, Mn)As Field-Effect Transistor Structures with Varying Channel Thickness and Mn Compositions
186. MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
187. CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio
188. CoFeB/MgO/CoFeB Magnetic Tunnel Junctions with Low Resistance-Area Product and High Magnetoresistance
189. Electrical Control of the Magnetic Properties in (Ga,Mn)As Channel in Electric Double Layer Transistor
190. 3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film
191. Magnetic Domain Wall Dynamics in (Ga,Mn)As (Invited)
192. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
193. Properties of Ga1−xMnxAs with high x (>0.1)
194. 2‐Mb SPRAM design: bi‐directional current write and parallelizing‐direction current read based on spin‐transfer torque switching
195. Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions
196. Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier
197. 2Mb SPRAM Design: Bi-Directional Current Write and Parallelizing-Direction Current Read Schemes Based on Spin-Transfer Torque Switching
198. Properties of Ga1−xMnxAs with high Mn composition (x>0.1)
199. 2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read
200. Electrical modulation of Curie temperature of (Ga,Mn)As channel in field-effect transistors: Mn composition dependence
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