1,295 results on '"Meneghesso, Gaudenzio"'
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152. Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
153. CdTe solar cells: technology, operation and reliability
154. Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
155. Preventing infectious diseases in Intensive Care Unit by medical devices remote control: Lessons from COVID-19
156. GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms
157. Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications
158. A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
159. Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
160. Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation
161. Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs
162. Hydrogen-terminated diamond MESFETs: operating principles, static and dynamic performance, and reliability
163. How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile
164. Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon
165. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations
166. Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements
167. A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level
168. An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters
169. Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs
170. A statistical approach to microdose induced degradation in FinFET devices
171. Dose enhancement due to interconnects in deep-submicron mosfets exposed to X-rays
172. Analysis of the role of current, temperature, and optical power in the degradation of InGaN-based laser diodes
173. Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling.
174. Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics
175. Inactivating SARS-CoV-2 Using 275nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation
176. Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers
177. “Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
178. GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
179. Full Optical Contactless Thermometry Based on LED Photoluminescence
180. Microdose and breakdown effects induced by heavy ions on sub 32-nm triple-gate SOI FETs
181. Reducing the EMI susceptibility of a Kuijk bandgap
182. Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
183. Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon
184. Half-bridge Concepts for High Blocking Voltage GaN HEMT
185. Reversible degradation of ohmic contacts on p-GaN for application in high-brightness LEDs
186. Electrostatic discharge effects in irradiated fully depleted SOI MOSFETs with ultra-thin gate oxide
187. High-temperature degradation of GaN LEDs related to passivation
188. Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs
189. Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes
190. Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator
191. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors
192. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors
193. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
194. Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements
195. Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction
196. Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs
197. High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
198. GaN Vertical p–i–n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation
199. High-temperature failure of GaN LEDs related with passivation
200. 30-nm two-step recess gate InP-based InA1As/InGaAs HEMTs
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