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The effects of Bi(Zn 0.5 Ti 0.5 )O 3 (BZT) substitution in BaTiO3 (BT) or (Bi 0.5 Na 0.5 )TiO 3 (BNT) piezoelectric ceramics were studied. (1–x)BaTiO 3 −xBi(Zn 0.5 Ti 0.5 )O 3 (x = 0.02, 0.04, 0.06, 0.08, 0.10, 0.20, 0.30, and 0.40) and (1–y)(Bi 0.5 Na 0.5 )TiO 3 −yBi(Zn 0.5 Ti 0.5 )O 3 (y = 0, 0.01, 0.025, 0.05, 0.10, and 0.20) ceramics were prepared by a solid state reaction method. The structures and surface morphologies have been examined using an X-ray diffraction and scanning electron microscopy, respectively. The grain size and density increased with increasing the amount of BZT in both systems. Curie temperatures (T C ) were decreased as BZT substituted. Piezoelectric properties also decreased with the substitution of BZT.

A-site non-stoichiometric lead-free 0.93(K 0.5 Na 0.5 ) (1 + x) NbO 3 − 0.07LiNbO 3 (KNNL) piezoelectric ceramics were prepared by a solid state reaction. The contents of both K and Na were simultaneously controlled to −4 mol% deficient. The K 3 Li 2 Nb 5 O 15 second phase was observed in most of the composition except for 0 mol%. The polymorphic phase transition (PPT) between the tetragonal and orthorhombic phases was found from X-ray diffraction and temperature-dependent dielectric constant at around −2 mol%. With increasing (K+Na) ion deficiency, the PPT temperature of KNNL ceramics increased but Curie temperature (T C ) decreased. The piezoelectric constant was 155 pC/N for nominally stoichiometric KNNL and decreased as decreasing (K+Na) content.

In the study presented here, quantitative detection of ethyl chloride, dichloromethane, and trichloromethane individually and in mixture has been demonstrated using an external cavity broadly tunable quantum cascade laser (EC-QCL) based hollow waveguide gas sensor. The EC-QCL has been characterized by coupling into a FT-IR spectrometer documenting sufficient optical power output across a frequency tuning range from 1297 cm −1 to 1219 cm −1 . Concentrations as low as 4 ppb for ethyl chloride, 7 ppm for dichloromethane, and 11 ppb for trichloromethane were detected during exponential dilution experiments with the EC-QCL precisely tuned to selective absorption frequencies of the Q-branch for each constituent at 1287.25 cm −1 , 1262 cm −1 , and 1220 cm −1 , respectively.

The operational windows of the low-frequency dissipative instabilities in the Hanbit magnetic mirror device are investigated experimentally in a simple mirror con guration. Both the electron drift wave and the interchange mode are stabilized by nonlinear interactions with the sideband waves that originate from nonlinear beating between the plasma modes and texternally driven radio-frequency (rf) waves. Typically, both modes are stabilized near the fundamental ion cyclotron resonance condition as the external rf power and magnetic eld increase, which is in good agreement with theoretical prediction based on twouid plasma dispersion. The onset characteristics of the two modes are also found to depend on the neutral gas pressure; the drift waves are observed at lower pressure, in contrast to the interchange mode, which is found at higher neutral pressure.

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi4Ti4O15 grown on Bi4Ti3O12, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO2/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm2 at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 1010 switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi4Ti4O15 on Bi4Ti3O12 ferroelectric thin films were better than those of the SrBi4Ti4O15 grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi4Ti4O15 on the c-axis-oriented Bi4Ti3O12 layer or on the Pt-coated Si substrate.

We investigated the photo-structuring of silver-oxide lms by using femtosecond laser pulses. The silver-oxide lms were prepared by magnetron sputtering. The physical properties of the prepared silver-oxide lms were investigated by using absorption spectroscopy. For the sample that underwent the photo-structuring of the silver-oxide lms by two interfering femtosecond laser pulses, scanning and transmission electron microscopy measurements showed that a metal grating was formed through the photoreduction of silver oxide. Micro-photoluminescence spectroscopy showed spationally selective photoluminescence from the laser-modi ed region. In order to nd the nature of laser-modi ed region, we compared the metal grating formed by laser interference structuring with the thermally annealed lm.

Summary Recent studies have reported that two single nucleotide polymorphisms (SNPs) in the RANTES gene promoter region, –403G/A and –28C/G, are associated with a slower rate of decline in CD4+ T-cell number, whereas genetic polymorphisms within the CCR5 promoter are linked to acceleration of AIDS progression. In this study, we investigated the distribution of SNPs in the RANTES and CCR5 promoters and the association between these SNPs and HIV-1 disease progression in HIV-infected Koreans. Twenty-seven long-term non-progressors (LTNPs), 29 AIDS patients and 39 HIV-uninfected persons were enrolled in this study. SNPs for the RANTES and CCR5 promoters were determined by polymerase chain reaction–restriction fragment length polymorphism (PCR-RFLP) and a direct sequencing method. In the analysis of RANTES promoter polymorphisms, the genotypic and allelic frequencies of the RANTES –28G mutation were significantly lower in HIV-infected patients than in HIV-uninfected persons (P = 0.005 and P = 0.001, respectively). The genotypic frequencies of RANTES –28G and –403A mutations did not differ significantly between LTNPs and AIDS patients. The frequencies of three CCR5 promoter polymorphisms, designated 59029 G/A, 59353T/C, and 59402G/A, did not differ significantly between HIV-uninfected and HIV-infected patients. However, the allelic frequency of CCR559353C was significantly higher in AIDS patients than in LTNPs (P = 0.003). These results suggest that RANTES-28G and CCR5 59353C mutations might be associated with HIV infection or pathogenesis in the Korean population.

In the ((Na0.5K0.5)1−x)Lix)(Nb0.8Ta0.2)O3 (NKLNT) system, dense ceramics were developed by conventional sintering process. The electrical properties of NKLNT ceramics were investigated as a function of Li substitution. When the sample sintered at 1100°C for 4 h with the substitution of 2 mol% Li at the morphotropic phase boundary, electro-mechanical coupling factor (kP) and piezoelectric coefficient (d33) were found to reach the highest values of 0.42 and 210 pC/N, respectively. These excellent piezoelectric and electromechanical properties indicate that this system is potentially good candidate for lead-free material for a wide range of electro-mechanical transducer applications.

Three kinds of europium complexes; Eu(phen) 2 Cl 3 (H 2 O) 2 , Eu(DN-bpy)phenCl 3 (H 2 O) 2 and Eu(DB-bpy)phenCl 3 (H 2 O) 2 (phen: 1,10-phenanthroline, DN-bpy: 4,4′-Dinonyl-2,2′-dipyridyl, DB-bpy: 4,4′-Di- tert -butyl-2,2′-dipyridyl) were prepared and then incorporated into polymethyl methacrylate (PMMA) matrix with different molar ratios of C O groups/Eu 3+ ions. The final solid composites were formed by a self-assembly process among Eu 3+ ion, the ligands and PMMA during the solvent evaporation process, and then the ligands re-coordinate to Eu(III). It was found that the ligands affect not only the emission properties of the pure complexes, but also the miscibility of the complexes and PMMA. More than one kind of symmetric sites of Eu 3+ ions were formed in the composites due to the coordination of C O in PMMA to Eu 3+ ions. The micro-environments of Eu(III) in the composites were changed with the compositions and the ligands, leading to the change in the crystalline structure, and consequently, the emission characteristics.

In this paper, Ni–5at.%W alloy substrate for YBCO coated conductor was fabricated by a dry powder metallurgy process including powder compaction, cold isostatic pressing (CIP), cold rolling and annealing for recrystallization. Ni and W powders were ball-milled at this process for various times of 10, 30, 50 and 100 h in argon atmosphere. The rod-like Ni–W alloy compacts were sintered at 1150 °C for 1 h in 96%Ar–4%H 2 atmosphere. The sintered rods were cold rolling into thin tape of 70–90 μm thickness with 5% reduction at each path. The Ni–W alloy tapes were annealed at 800–1200 °C in an atmosphere of 96%Ar–4%H 2 mixing gas for the development of cube texture. The tape with the best properties of low surface roughness, small grain size and strong cube texture was obtained at the condition annealed at 1200 °C using ball-milled powder for 30 min. The W addition to Ni improved the mechanical properties by solid solution hardening and inhibited grain growth for annealing heat treatment. The tapes were characterized by X-ray pole-figure, optical microscopy (OM), scanning electron microscopy (SEM) and scanning probe microscopy (SPM).

Cr-substituted BiFeO3 (BFCr) thin films prepared from precursor solutions with stoichiometric composition and various excess Bi contents ranged from 5 to 20 mol% were fabricated on Pt/TiO2/SiO2/Si(100) substrates by a chemical solution deposition method, and the effects of excess Bi content in precursor solutions on the ferroelectric properties of the as-deposited BFCr thin films were studied. It was found that the BFCr thin film prepared from precursor solution with excess Bi content of 5 mol% exhibited the best dielectric constant–frequency and polarization–electric field characteristics. In detail, its dielectric constant is 158 at frequency of 100 kHz and remnant polarization (P r ) value is 49 μ C/cm2 at electric field of 600 kV/cm.

The analytic solution for the time stationary non-monotonic double layers in multi-species plasma is presented. This solution is the analytic extension of the monotonic double layer and the solitary hole. We have derived the modified Korteweg–de Vries equation in plasmas, taking account of negative ion effects. The effects of negative ion and density on the properties of the non-monotonic double layer are discussed.

The effects of microstructural variables, including secondary dendrite arm spacing (SDAS), the size of primary α phase, the aspect ratio of eutectic Si particle and the thickness of eutectic wall structure, on tensile behaviour of A356 cast aluminium alloy, were quantitatively identified using linear regression analysis method. For systematic microstructural control of A356 specimen, directional solidification method was used with different solidification rates of 5, 25, 50 and 100 μm s−1 respectively. The linear regression analysis suggests that each microstructural variable affects tensile strength and tensile elongation of A356 cast aluminium alloy in a similar fashion. The change in tensile behaviour with varying microstructural variables in A356 cast aluminium alloy is discussed based on fractographic and micrographic observations.

Cr-substituted BiFeO 3 (BFCr-3 mol%) thin films were deposited on Pt(200)/TiO 2 /SiO 2 /Si substrates by a chemical solution deposition. The coated films were annealed in the temperature range of 500°C∼ 600°C for 30 min under nitrogen atmosphere. The electrical properties of BFCr thin films were found to be sensitive to the annealing temperature. It was found that BFCr thin films exhibited good ferroelectric properties, such as an improved leakage-current density and P−E hysteresis characteristics. The BFCr thin film annealed at 525°C exhibits a low leakage current density of 9.2 × 10− 7 A/cm 2 at an applied electric field of 100 kV/cm. The films exhibited a well-saturated hysteresis loop with a remanent polarization (P r ) of 47 μC/cm 2 at room temperature. The reason for the improved leakage current and ferroelectric properties in BFCr thin films can be attributed to the effects of increased grain size and oxygen vacancies reduced by Cr doping.

Thermal stability of Ta films grown on Si(100) was investigated by in situ x-ray scattering and ex situ cross-sectional transmission electron microscopy. As a Ta∕Si(100) film was annealed at around 500°C, a uniform Ta–Si interlayer was formed at the interface. This interlayer acts as a diffusion barrier. The Ta film with the interlayer is thermally stable up to 700°C. Meanwhile, Ta films directly annealed to above 640°C exhibit no interlayer formation and transform to randomly nucleated tantalum-silicide phases. Maintaining a uniform interlayer is a critical factor for enhancing thermal stability of Ta∕Si(100) films.

© 2015 AIP Publishing LLC. Using three-dimensional nonlinear simulations of tokamak turbulence, we show that an edge transport barrier (ETB) forms naturally once input power exceeds a threshold value. Profiles, turbulence-driven flows, and neoclassical coefficients are evolved self-consistently. A slow power ramp-up simulation shows that ETB transition is triggered by the turbulence-driven flows via an intermediate phase which involves coherent oscillation of turbulence intensity and E × B flow shear. A novel observation of the evolution is that the turbulence collapses and the ETB transition begins when RT> 1 at t = tR(RT: normalized Reynolds power), while the conventional transition criterion (ω E × B > γ l i n where ω E × B denotes mean flow shear) is satisfied only after t = tC( >tR), when the mean flow shear grows due to positive feedback.

BaxSr1-xTiO3(BST) thin films with x = 0.5, 0.6, 0.7 and 0.8 were fabricated on p-type Si(100) substrates by a sol-gel spin coating method. All samples show the perovskite polycrystalline structures without the pyrochlore phase and have dense surface texture and crack-free uniform microstructures. The C-V characteristics of the BST thin film/p-type Si(100) capacitors exhibit clockwise hysteresis loops and also clearly show regions of accumulation, depletion and inversion corresponding to those of metal-ferroelectric-semiconductor structures. Furthermore, a constant memory window has been observed through the entire frequency ranges from 1 kHz to 10 MHz.

A new type of bismuth-based relaxor, such as Bi2(Y1/2Nb1/2)2O7 and Bi2(Mg1/3Nb2/3)2O7 thin films were fabricated on Pt/Ti/SiO2/Si substrate by a sol-gel spin coating process. The films exhibit characteristic diffused phase transition. The temperature dependent reciprocal dielectric constant characteristics of the films deviates from the Curie-Weiss law in the temperature range over the dielectric constant maximum temperature (T m ). The diffuseness of the phase transition of the thin films was estimated by calculating the difference between T m and T cw (starting temperature following the Curie-Weiss law). For the thin films annealed at 750°C, the temperature T m , the Curie-Weiss temperature Θ, the Curie-Weiss constant c and the temperature T cw were measured at frequency of 103 Hz, respectively.

The metastable liquidi in the Al–In, Al–Bi, and Al–Pb systems were assessed through the thermodynamic modelling of the liquid miscibility gaps. The subregular solution model was applied to describe the Gibbs free energy of liquid phases and the interaction parameters were optimized using the phase diagram data. In addition, spinodal curves were assessed to predict the possible regions for metastable phases. The present results were compared and discussed with other experimental and assessed data available from the literature.

Recently perovskite niobates were paid much attention as lead-free piezoelectric materials to replace lead-based Pb(Zr,Ti)O3 or relaxor systems which cause much environmental problems. Piezoelectric and ferroelectric properties of electromechanical coupling coefficient and quality factor in (K0.5Na0.5)NbO3 ceramic were studied. Dielectric properties of niobates including Ag ion; AgNbO3 and (Ag0.5Na0.5)NbO3 were studied. Phase transitions and dielectric relaxations were studied from the frequency and temperature dependent dielectric constant measurements. The piezoelectric properties were hardly observed in silver niobate systems.

A spent LWR fuel specimen between Ca-bentonite blocks was leached in a simulated bentonite-saturated granitic water (SBGW) for 165 days and its results were compared with those of a specimen leached without a bentonite block. The amounts of Cs, Sb, Sr, Eu, Am, U and Pu released from a 4.3 mm thickness of a fuel pellet with a 50,400 MWD/MTU burn-up in the SBGW without a bentonite block were 2.2, 0.25, 0.15, 0.02, 0.01, 0.01 and approximately 5 x 10(-4)% of their inventories, respectively. However, the amounts of nuclides released from the specimen between the 1.4 Mg/m(3) bentonite blocks were decreased by three times at least. Moreover, the concentrations of the nuclides in the leachate were very low because most of them were retained in the bentonite blocks.

Cr-doped BiFeO3 (BFO) thin films were deposited on Pt(200)/TiO2/SiO2/Si(100) substrates by a chemical solution deposition method. The dielectric constant and dissipation factor of the BFO thin films decrease from 165 and 0.054 (undoped) to 100 and 0.02 (3 mol% Cr-doped) at a frequency of 10 kHz as the Cr content increases. The leakage current and ferroelectric properties were improved significantly by means of Cr doping. The leakage current density of 4.1×10−6 A/cm2 for the 3 mol% Cr-doped BFO thin film is about four orders of magnitude lower than that of undoped BFO thin film at an external electric field of 100 kV/cm. The 3 mol% Cr-doped BFO thin film exhibited a well-saturated hysteresis loop with a large remanent polarization (P r) of 61 μC/cm2 at room temperature. The reason for the improved leakage current and ferroelectric properties in Cr-doped BFO thin films can be attributed to the reduced oxygen vacancies in the films by Cr doping. Communicated by Dr. George W. Taylor

5 mol % La 3 + , Nd 3 + or Y 3 + -cosubstituted BiFe 0.97 Cr 0.03 O 3 thin films (denoted by BLaFCr, BNdFCr, and BYFCr, respectively) have been successfully deposited on Pt (200)/TiO 2 /SiO 2 /Si substrates by a chemical solution deposition method. Well-saturated ferroelectric hysteresis loops and low leakage current densities have been observed in BLaFCr, BNdFCr, and BYFCr thin films with single-phase structure. The values of remanent polarization (P r ) and coercive field (E c ) were 64 μ C/cm 2 and 275 kV/cm, 61 μC/cm 2 and 290 kV/cm, and 31 μ C/cm 2 and 315 kV/cm for BLaFCr, BNdFCr and BYFCr thin films at the maximum electric field of 712 kV/cm, respectively. In the present study, the differences in values of P r seem to be related to the doped ionic radii.

We prepared two kinds of Sm-doped strontium borates. When the samples were prepared in air environment, while the Sm3+ ions doped in strontium tetraborate (STB) were well reduced, the trivalent Sm ions were partially reduced in strontium hexaborate (SHB). The SHB was successfully reduced by subsequent x-ray irradiation (SHBX) and showed a strong Sm2+ emission. The photoluminescence, excitation spectrum and spectral hole burning experiments were conducted for the samples. The crystallographic sites of Sm2+ ions were found to be different in the STB and SHBX. Spectral holes were observed at room temperature in both samples STB and SHBX. The measured hole depths were 24% and 63% in STB and SHBX, respectively. As a result, we could obtain effective and novel hole burning material based on the Sm-doped strontium borates with x-ray-induced reduction.

It is well known that selective serotonin reuptake inhibitors (SSRIs) can cause sexual dysfunction, so it is possible that sibutramine, a serotonin and norepinephrine reuptake inhibitor, could induce sexual dysfunction.The effect of sibutramine on sexual function was evaluated in 46 overweight and obese (body mass index (BMI)or = 23 kg/m2) but otherwise healthy married women (28-44 years). Participants were randomly assigned at baseline to either the sibutramine or control group. The Female Sexual Function Index (FSFI) questionnaire was used to assess sexual function at baseline and after treatment with behavioral therapy plus sibutramine 10 mg once daily or behavioral therapy alone (control) for 8 weeks.Mean weight loss from baseline to week 8 was -6.03% in sibutramine group and -0.38% in the control group. There was significant improvement of FSFI total score, arousal domain score and lubrication domain score in the sibutramine group (P0.05), and significant differences in arousal, orgasm, satisfaction domain score and total score (P0.05) in favor of sibutramine. Decreases in body weight and BMI were correlated with the improvement of arousal (r = -0.44 and r = -0.48, respectively) and orgasm (r = -0.45 and r = -0.46, respectively) domains.Treatment with sibutramine plus behavioral therapy did not induce sexual dysfunction and sibutramine-induced weight reduction appeared to have a positive impact on sexual function in this small group of overweight and moderately obese women. The degree of improvement in sexual function was correlated with the degree of weight reduction.

Cu-doped Ba0.7Sr0.3TiO3 (BST) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a sol-gel spin coating process. The coated thin films were annealed at 750°C for 3 min in oxygen, air and nitrogen atmospheres by a rapid thermal annealing process. All of the Cu-doped BST thin films were consisted of a single phase perovskite structure and exhibited smooth crack-free surfaces. We investigated the effects of the annealing atmosphere on the microstructure and the electrical properties of the Cu-doped BST films. The Cu-doped BST film by annealing in oxygen exhibits a dielectric constant of 923 with electric field dependent tunability of 48.6% at electric field 250 kV/cm and a leakage current density of 1.82 × 10− 5A/cm2 at electric field of 150 kV/cm.

The atomic structure of the Al-induced clusters on Si(0 0 1) surface formed by the annealing of 0.5 ML Al/Si(0 0 1) at 500 °C has been studied using coaxial impact collision ion scattering spectroscopy (CAICISS). CAICISS results proposed that the Al atoms occupy the cave site (T4 site) and off-centered T4 site. To determine the structure of the Al-induced clusters definitely, classical ion-scattering trajectory simulations using scattering and recoiling imaging code (SARIC) have been performed for the recently proposed most possible four different cluster models (Bunk, Zotov, Kotlyar, and Zavodinsky model). Our CAICISS spectra and simulation results show that the Bunk model is the best plausible one among the models. As the results of the simulations, it is found that Al–Si dimers has been oriented on the topmost layer of the Si(0 0 1) surface with a bonding length (Δz) of 1.00 ± 0.05 A.

Neodymium-substituted Bi4Ti3O12 (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as O2, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization (Pr) of ∼48 μC/cm2 with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in O2 atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller Pr than that annealed in oxygen. The difference of Pr of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies.

The formation of phase-pure BiFeO3 (BFO) thin films using a chemical solution deposition on platinium electrode has been investigated systematically by changing the annealing condition of the films. From the X-ray diffraction results, it was found that the formation of the phase-pure BFO was favorable under lower oxygen partial pressure, slower heating rate and Pt(200)/Ti/SiO2/Si(100) substrate. The remanent polarization (P r ) and coercive field (E c ) values of the phase-pure BFO thin film annealed at 600°C in nitrogen atmosphere by conventional furnace annealing method are approximately 0.9 μC/cm2 and 20 kV/cm, respectively.

Bi 3.54 Nd 0.46 Ti 3 O 12 (BNdT) thin films have been deposited on p-type Si(100) substrates by a sol-gel method. The microstructures of the film were examined by X-ray diffractometer and scanning electron microscope. The C-V characteristic hysteresis curves show that the metal/ferroelectric/semiconductor structure has memory effect. The fixed charge density (Nfc), surface state density (Nss) and activation energies (Ea1 and Ea2) were also calculated by using a high-low frequency method and thermally stimulated currents measurement. The calculated Nfc,Nss, E a1 and E a2 values were 2.9 × 10 11 cm −2 , 1 × 10 12 cm −2 eV −1 , 1.16 eV and 0.04 eV, respectively. From the results, it is expected that the BNdT films have promising applications as ferroelectric field effect transistor for nonvolatile ferroelectric random access memories.

We report on the ferroelectric properties of Bi 3.54 Nd 0.46 Ti 3 O 12 (BNT) thin films fabricated on Pt(111)/Ti/SiO 2 /Si substrates by a sol-gel process. The measured XRD patterns and SEM and TEM micrographs revealed that the films showed only a Bi 4 Ti 3 O 12 -type phase with random orientations. The Au/BNT/Pt capacitors showed excellent ferroelectric properties. For the film capacitor annealed at 700°C, the remanent polarization (2P r ) and the coercive field (2E c ) were 67 μC/cm 2 and 183 kV/cm at applied electric field of 300 kV/cm, respectively. Furthermore, the Au/BNT/Pt capacitor did not show any significant fatigue up to 1.5 × 10 10 read/write switching cycles at a frequency of 1 MHz.

This paper is concerned with manufacturing technology of thin foil tensile specimen using CIP(Cold Isostatic Press) and measurement of precision mechanical properties using micro tensile testing. We can get a burr free micro metallic thin foil specimen using this technology. For testing mechanical property of this micro thin foil, we use a nano scale material testing machine that was developed by KITECH. In this paper, micro tensile specimens of nickel and copper thin foil are fabricated with CIP and precision mechanical properties of these materials could be measured. We will expect precision mechanical property of micro/nano material and component.

There was no useful milling standard to produce high quality milled rice efficiently and adequately in Rice Processing Complex. Therefore, the whiteness of milled rice produced Rice Processing Complexes were different according to Rice Processing Complexes and milling periods at the same Rice Processing Complex. This research was carried out to contribute the production and distribution of high quality milled rice through determination of whiteness condition of milled rice as a milling stndard based on degree of bran removal using New reagent dyeing method and taste of cooked rice. The optimum whiteness value of milled rice for efficient milling in Rice Processing Complex was found to be from 40 to 41, while the degree of milling was from At this whiteness condition, the first derivative of whiteness value according to degree of milling was higher than the average value from brown rice to well milled rice, and the broken kernel ratio was from This whiteness condition () could be considered as a milling condition in Rice Processing Complex.

Deep drawing and cold forging processes are combined to achieve near net shape forming of automotive part which has not only drum shape but also thickness variation. It is important to find out proper intermediate shape where two totally different forming methods should be joined seamlessly. In the course of development of the combined process, finite element analysis can be utilized effectively to decide optimal position for transferring from the sheet metal work to the bulk forming. Because machining process is eliminated, significant improvement in integrity, reliability, and durability of the part is expected. The developed process combination could be applied in real manufacturing process successfully.

Ethylene (C2H4) on the Si(0 0 1) surface has been a subject of numerous investigations over a decade. Despite a wealth of experimental and theoretical studies, the adsorption structures are not clearly understood yet. In order to elucidate this controversial issues clearly, C2H4 molecules have been non-dissociatively chemisorbed on Si(0 0 1)-(2 × 1) surface at room temperature with an exposure of 100 L, and C2H4 on Si(0 0 1) surface structure has been investigated by coaxial impact collision ion scattering spectroscopy (CAICISS). To determine the adsorption structure of the C2H4 molecules definitely, the computer simulation with the two-dimensional trajectory counting method has been performed for the recently proposed most possible two single molecular adsorption configurations (di-σ on-top and di-σ end-bridge). The CAICISS spectra show a better agreement with the simulation results for the di-σ on-top structure than that for the di-σ end-bridge structure. The bond length of Si dimer separation on the Si(0 0 1) surface with the adsorption of 100 L C2H4 is found to be 2.35 ± 0.05 A. This implies that the bonding of Si dimers stays intact. It is also found that the bonding length of C–Si and C–C is 1.81 ± 0.05 A and 1.61 ± 0.05 A respectively.

Purpose: To describe the MR findings of primary central nervous system T‐cell lymphoma (T‐PCNSL) in immunocompetent patients. Material and Methods: Seven patients with pathologically proven T‐PCNSL were included in our study. The number, location, shape, enhancement pattern, and signal intensity of the tumors were determined. Diffusion‐weighted images (DWI) and perfusion‐weighted images (PWI) were obtained in four and two patients, respectively. Apparent diffusion coefficients (ADCs) were generated, and regions of interest were defined in each lesion. Results: Four patients with T‐PCNSL had a single mass, while the others had multiple lesions (four, three, and two lesions, respectively). All seven cases of T‐PCNSL had a supratentorial location: 12 in the subcortical area and 1 in the thalamus. No leptomeningeal involvement was noted. All tumors showed iso‐ to low T1 and iso‐ to slightly high T2 signal intensity to the adjacent gray matter. Rim enhancement was seen in 5 of the 7 patients (71.4%), while heterogeneous and homogeneous enhancement was seen in each of two. On DWI and ADC maps, the enhancing lesions showed slight hyperintensity in three patients (mean ADC ratio, 0.92±0.06) and iso‐intensity in the other (ADC ratio, 1.02±0.05). Cystic areas consistent with necrosis were noted in three patients. High‐signal intensity area in the cortex was noted on T1‐weighted images in three patients, suggesting hemorrhage. In two patients, the same signal intensity area was noted within the mass. The two masses on the relative cerebral blood volume (rCBV) map demonstrated either similar or slightly higher signal intensity than that of the contralateral white matter. The rCBV ratios of these two masses were 1.27±0.16 and 1.35±0.2, respectively. Conclusion: T‐PCNSLs show a predilection for a subcortical location, a relatively high incidence of cortical or intratumoral hemorrhage, rim enhancement, or cystic areas consistent with necrosis on magnetic resonance imaging. The lower rCBV ratio of the tumor might be helpful in differentiating T‐PCNSL from other brain tumors such as high‐grade glioma.

Well c-axis oriented 320 nm and 160 nm thick ZnO thin films were deposited with pulsed laser deposition on Pt/Ti/SiO2/Si(100) substrates. Diode characteristics of Au/ZnO/Pt in electrical conductivity were observed. The conductivity in forward bias was sensitive to the hydrogen annealing but almost insensitive in reverse bias. The conductivity of 320 nm thick film in forward bias increased from 6.1 × 10−5 Ω−1 cm−1 in as-deposited film to 3.3 × 10−3 Ω−1 cm−1 in hydrogen annealed one at 200°C. The observed dielectric constant 70 was much higher than that of ceramic ZnO. Dielectric anomaly at about 1 kHz was observed and attributed to the space charge.

The radio frequency (RF) stabilization effects to investigate the characteristics of the interchange instability by RF power and magnetic field modulation experiments were performed near {omega}/{omega}{sub i} {approx} = 1 and with low beta ({approx} 0.1%) plasmas in the central cell of the Hanbit mirror device. Temporal behaviors of the interchange mode were measured and analyzed when the interchange mode was triggered by sudden changes of the RF power and magnetic field intensity.

The HANBIT device is a simple mirror-type device of which the length, radius, and magnetic field are about 5 m, 0.18 m, and 0.1-0.3 T, respectively, in the central cell. In HANBIT, two antenna systems are used for the plasma production, heating, and MHD stabilization; one is the slot antenna located near the center region with the maximum power of 500 kW and the typical frequency of 3.5 MHz, and the other DHT antenna located near the mirror throat with the maximum power of 100 kW and the frequency of 3.75 MHz. Recent experimental studies in HANBIT indicate that the slot antenna system can produce stable, high-density plasmas in apparently two different regimes; one is the fast wave regime with the ratio w/Wci∼2 and the other is the slow wave regime with w

The growth kinetics of passive films on iron and stainless steel (Fe−16.31%Cr) substrates in pH 8.4 borate buffer solution was investigated by using in situ specular X-ray reflectivity. The oxide growth rate decays exponentially with increasing oxide thickness consistent with the point defect model in which the electric field in the oxide is maintained constant during growth. In stainless steel, however, the electric field depends strongly on the applied potential, indicating that the oxide properties change as the applied potential varies. Using the electric field in the oxide and the observed saturation oxide thickness in a quasi steady state, we estimate the potential drop at the metal/oxide interface, in the oxide, and at the oxide/solution interface.

The most controversial topics in plasma sprayed ceramic coating systems recently are mechanical properties such as bond strength, cohesive strength and toughness. In our research, critical fracture load (Pc) and interface toughness (Kc) of four-coating materials were computed from the applied load, crack length and Young's modulus data that were measured by micro-Vickers and a nano-indentation test. It is reasonable to consider the Pc value as comparison data of bond strength, and the Kc value, considering a trace of indent in the interface, was computed by a modified (E/H)I1/2ratio. Also, we knew that Pc decreased as the hardness of the coating increased. In the case of the high load (9.8 and 19.6N) in the Al2O3+13%TiO2 coating, the critical point (Pco) was found at which the coating was broken. Used by a XRD phase analysis, we checked changes of the coating's properties and predicted a possible change of the phases in plasma-sprayed coating.

HANBIT is a magnetic mirror confinement device. Recent physics experiments have been mainly focused on identifying discharge characteristics and on getting stable plasma production and operation modes, by using a 500 kW slot antenna system at a fixed RF frequency of 3.5 MHz and varying discharge conditions such as fueling rate, RF power, and B-field intensity in central cell. Two distinct operation modes are found to be very sensitive to the RF power as well as the ratio of the RF frequency to the ion cyclotron frequency. A MHD interchange mode of m = -1 is clearly observed and the stabilizing mechanism can be explained by the sideband coupling theory.

A theoretical study is made of the effects of radio frequency (rf) waves in the range of ion cyclotron frequency on interchange modes in mirror plasmas. A two-fluid cold plasma model including particle collisions is utilized for the investigation. Both the equilibrium ponderomotive force produced by the gradient of rf wave amplitude and the sideband wave coupling mechanism originated from the nonlinear beating between high frequency waves are taken into account. A tractable form of the dispersion relation for the interchange mode is obtained and applied to carrying out a parametric study. Key parameters affecting the stability boundary are identified and the consequences of the parameter variation on the stability boundary change are analyzed near ion cyclotron resonance region.

Nonstoichiometric SrBi2Ta2O9 (SBT) and SrBi2Nb2O9 (SBN) ceramics were prepared by a solid state reaction method. X-ray diffraction analysis showed that single-phase of Bi-layered perovskite was obtained. With different Sr/Bi content ratios of SBT and SBN, Curie temperature (T C ), electromechanical factor (K p ) and mechanical quality factor (Q m ) were measured. T C of SBN (SBT) rose from 414∘C (314∘C) to 494∘C (426∘C) when Sr/Bi content ratio was increased from 0.55/2.3 to 1.2/1.8. In the most Sr-deficient/Bi-excess ratio of 0.55/2.3, the maximum values of Q m were obtained approximately 1013 and 3325 for SBT and SBN, respectively.

Coplanar waveguide (CPW) transmission lines were fabricated on thin ferroelectric Ba1 − xSrxTiO3 films for tunable microwave applications. The growth of the ferroelectric oxide films was accomplished by a pulsed laser deposition with a partial oxygen background. Microwave properties of the CPW phase shifter were measured using a HP 8510C vector network analyzer from 0.045–20 GHz with −40–40 V of dc bias. A large phase shift angle of ∼ 120∘ at 10 GHz was observed from the CPW (gap = 4μm, length = 3 mm) with a 40 V of dc bias change. The dielectric constant of the thin ferroelectric film was extracted from the dimension of the CPW (gap, width, length) and the measured S-parameter by a modified conformal mapping. However, the dielectric constant of the ferroelectric thin film exhibits a gap dependency; dielectric constant (990–830) decreases with increasing gap size (4–19 μm, respectively). By adjusting the filling factors of the film, a ‘constant’ dielectric constant of BST film is found to be 810 ± 5.

Ionic doping effects of various ions in Bi-layered ferroelectric SrBi2Nb2O9 (SBN) ceramics were studied. Un-doped and doped SBN ceramics with Ba2+, Pb2+, Ca2+, Bi3+, La3+, Ti4+, Mo6+, and W6+ ions were made with solid state reactions. Temperature dependent dielectric constants were measured. Ferroelectric transition temperature (TC) decreased with Ba2+ and Pb2+ ions but increased with Ca2+ ion which substitutes the 12-coordinated Sr2+ site. TC increased with Ti4+, Mo6+, and W6+ ions which substitute the 6-coordinated Nb5+ sites. With trivalent Bi3+ and La3+ ions, TC increased with Bi3+ ion but much decreased with La3+ ion. These results showed that the ion size plays an important role in ferroelectricity of SBN ceramics.

Ferroelectric properties of samarium substituted Bi4Ti3O12 films, Bi3.15Sm0.85Ti3O12 (BST), were evaluated for use as lead-free thin film ferroelectrics for FeRAM applications. The BST films were fabricated on the Pt/Ti/SiO2/Si(100) substrates by a metalorganic solution deposition method. The measured XRD patterns revealed that the BST films showed only a Bi4Ti3O12-type phase with a random orientation. The BST film capacitors showed excellent ferroelectric properties. For the film capacitor annealed at 700∘C, 2Pr of 64.2 μ C/cm2 and 2Ec of 101.7 kV/cm at applied electric field of 150 kV/cm were observed. The capacitor did not show any significant fatigue up to 1.5 × 108 read/write switching cycles at a frequency of 1 MHz, which suggests that the samarium should be considered for a promising lanthanide elements to make a good thin ferroelectric film for memory applications.

Background: Helicobacter pylori infection increases the risk of gastric cancer but the molecular mechanisms responsible are not well understood. Gastric cells chronically exposed to H pylori in vitro develop resistance to apoptosis associated with low levels of p27, a cyclin dependent kinase inhibitor and haplo insufficient tumour suppressor gene that is downregulated in gastric cancer. Aim: To determine whether the low level of p27 protein is responsible for the resistance to apoptosis of gastric cancer cells. Methods: The effects of increasing the expression of p27 protein were examined by transiently and stably transfecting a plasmid encoding full length p27 mRNA into apoptosis resistant gastric cancer cell lines with low p27 expression that were derived from AGS gastric cancer cells by chronic H pylori coculture followed by dilutional cloning. Results: Low p27 expression in the apoptosis resistant derivative cell lines was associated with an approximate 30% decrease in p27 mRNA and an 80% decrease in p27 protein that was not due to increased proteasome dependent degradation of p27 protein. Transient or stable transfection with p27 constructs partially restored the sensitivity of the apoptosis resistant cells to 5-fluorouracil and H pylori induced apoptosis without altering spontaneous apoptotic cell death. Conclusions: These results demonstrate that p27 positively regulates, at least in part, the apoptotic response of gastric epithelial cells to H pylori . Low gastric p27 may promote gastric carcinogenesis associated with H pylori infection by inhibiting apoptotic pathways.

Sm3+-doped glass sol was prepared by a sol–gel method and coated on a bare Si substrate and an Al coated Si substrate (Al/Si). The coated glass films were heat treated in a hydrogen atmosphere or air to reduce the Sm3+ to Sm2+ and then the optical properties were examined through a photoluminescence (PL) experiment. While the glass films coated on a bare Si substrate or an Al/Si one were well reduced in hydrogen atmosphere, only the glass films coated on the Al/Si substrate were reduced in air. We thus suggest two possible reducing mechanisms related to hydrogen and the metal aluminium and we found that the metal aluminium coated on a Si substrate plays an important role in the reducing process.

The antioxidative actions of zinc and molybdenum dithiophosphates and their mixtures were evaluated using the RBOT (rotary bomb oxidation test) and the ISOT (Indiana stirring oxidation test). The results showed a synergistic effect on the antioxidative action with certain mixtures of the additives in mineral oil. FTIR spectra indicated the presence of some oxidation products and the degradation of the additives in the additive-containing oils.