1,664 results on '"Speck, James S."'
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152. Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy
153. Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field
154. Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)
155. Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation
156. Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser
157. Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package
158. Impact of strain on free-exciton resonance energies in wurtzite AlN
159. Electrical and structural characterization of Mg-doped p-type [Al.sub.0.69][Ga.sub.031]N films on SiC substrate
160. MBE of transparent semiconducting oxides
161. Contributors
162. Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)
163. Seeded growth of GaN by the basic ammonothermal method
164. Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
165. Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction
166. Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy.
167. Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography.
168. Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy.
169. Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia
170. β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels
171. Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride
172. Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy
173. Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
174. Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination
175. Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c -Plane and m -Plane ( In , Ga ) N Quantum Wells
176. III-nitride blue light-emitting diodes utilizing hybrid tunnel junction with low excess voltage
177. Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage
178. Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices
179. Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy
180. Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN
181. Impact of In content on the structural and optical properties of (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy
182. Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%.
183. Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3.
184. Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy
185. Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
186. INDIUM NITRIDE: A NEW MATERIAL FOR HIGH EFFICIENCY, COMPACT, 1550nm LASER-BASED TERAHERTZ SOURCES IN CHEMICAL AND BIOLOGICAL DETECTION
187. Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN
188. GaN HBT: toward an RF device
189. Superlattice hole injection layers for UV LEDs grown on SiC
190. H2O vapor assisted growth of β-Ga2O3by MOCVD
191. Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors
192. Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate
193. Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition
194. 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates
195. Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template
196. Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions
197. Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition
198. Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate
199. Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate
200. Ultrafast dynamics of hole self-localization in β-Ga2O3
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