151. Study of sublattice inversion in GaAs/Ge/GaAs(001) crystal by X-ray diffraction
- Author
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Ryoichi Ito, Shinichiro Nakatani, Keiichi Hirano, Shinji Koh, Toshio Takahashi, Shuji Kusano, and Takashi Kondo
- Subjects
Diffraction ,Condensed matter physics ,Scattering ,Chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Heterojunction ,Germanium ,Surfaces and Interfaces ,General Chemistry ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Epitaxy ,Surfaces, Coatings and Films ,Crystal ,Standing wave ,Condensed Matter::Materials Science ,Crystallography ,Condensed Matter::Superconductivity ,X-ray crystallography - Abstract
The structures of GaAs/Ge/GaAs(001) crystals designed for prototypes of nonlinear optical devices were investigated by X-ray diffraction (XRD). The intensity distribution of crystal truncation rod (CTR) scattering showed that the quality of GaAs epitaxial layers is good. The results of X-ray standing wave (XSW) measurements clearly indicated that the 90° rotation of the epitaxial layers, which is a necessary condition for the phase matching, occurs.
- Published
- 2000
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