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High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide (\HfO2) as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high- \kappa gate dielectric, ultrathin poly-Si NW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 \mu \A/\mu\m results from the ultrashort gate length (LG), thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications. [ABSTRACT FROM PUBLISHER]

Fringing-induced barrier lowering (FLBL) effect on nanoscale MOSFET is comprehensively examined. It is observed that by combining stack gate dielectric, conductive spacer, shod sidewall spacer, and minimum gate/drain (G/D) overlap, the Ioff with a dielectric constant of (k) 100 is only 1.6 times higher than that with k = 3.9 when the gate length is 25 nm. The fully depleted silicon-on-insulator device shows even better FLBL immunity. It is concluded that although the FIBL effect can not be eliminated, it would not an issue beyond the 45-nm technology node. [ABSTRACT FROM AUTHOR]

The fabrication processes, electrical characteristics, and reliability of the Schottky barrier diodes (SBDs) on an n-type 4H-silicon carbide (SiC) substrate are investigated. To modulate the Schottky barrier height (SBH), titanium dioxide (TiO2) is inserted at the interface between the metal and the SiC substrate. Ni, Mo, Ti, and Al are chosen to form SBDs. The maximum SBH modulation of 0.3 eV is obtained with a 5-nm-thick TiO2 layer. The SBH pinning factors of the SBDs without TiO2 insertion and with 2-nm-thick TiO2 insertion are similar. Therefore, the mechanism of the SBH modulation is attributed to the interface dipole-induced potential drop. Finally, the reliability of the SBD with TiO2 insertion is evaluated. The SBH, ideality factor, and reverse leakage current are stable after high forward current stress at 300 A/cm2 for 15000 s. This work provides a simple method to modulate the SBH on SiC and is feasible for SBD application. [ABSTRACT FROM AUTHOR]