419 results on '"Xia, Yidong"'
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152. Memristive learning and memory functions in polyvinyl alcohol polymer memristors
153. A Reconstructed Discontinuous Galerkin Method Based on a Gas Kinetic Scheme for Compressible Flows on Arbitrary Grids
154. An implicit, reconstructed discontinuous Galerkin method for the unsteady compressible Navier-Stokes equations on 3D hybrid grids
155. On the Multi-GPU Computing of a Reconstructed Discontinuous Galerkin Method for Compressible Flows on 3D Hybrid Grids
156. An implicit Hermite WENO reconstruction-based discontinuous Galerkin method on tetrahedral grids
157. Enhanced half-metallicity in the zigzag graphene nanoribbons by adsorption of the zigzag hydrogen fluoride molecular chains
158. Half-metallicity in graphitic C3 N4 nanoribbons: An ab initio study
159. Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure
160. Erratum: “Ga2Te3 phase change material for low-power phase change memory application” [Appl. Phys. Lett. 97, 083504 (2010)]
161. Implicit Large Eddy Simulation of Turbulent Flows by a Reconstructed Discontinuous Galerkin Method
162. OpenACC-based GPU Acceleration of a 3-D Unstructured Discontinuous Galerkin Method
163. High-k-rare-earth-oxide Eu2O3films for transparent resistive random access memory (RRAM) devices
164. Synthesis of Easily Transferred 2D Layered BiI3Nanoplates for Flexible Visible-Light Photodetectors
165. The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices
166. Conduction mechanism of resistance switching in fully transparent MgO-based memory devices
167. The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices
168. A Parallel, Implicit Reconstructed Discontinuous Galerkin Method for the Compressible Flows on 3D Arbitrary Grids
169. The chemically driven phase transformation in a memristive abacus capable of calculating decimal fractions
170. Electric field modulated dispersion and aggregation of Ti atoms on graphene for hydrogen storage
171. A WENO Reconstruction-Based Discontinuous Galerkin Method for Compressible Flows on Hybrid Grids
172. An Implicit Reconstructed Discontinuous Galerkin Method Based on Automatic Differentiation for the Navier-Stokes Equations on Tetrahedron Grids
173. Tunable electronic structures in MPX3 (M = Zn, Cd; X = S, Se) monolayers by strain engineering.
174. Synthesis of PbI2 nanowires for high sensitivity photodetectors.
175. Carrier-tunable magnetism in two dimensional graphene-like C2N.
176. The effect of the thickness of tunneling layer on the memory properties of high- k composite charge-trapping memory devices.
177. An Implicit Method for a Reconstructed Discontinuous Galerkin Method on Tetrahedron Grids
178. A Hierarchical Hermite WENO Reconstruction-Based Discontinuous Galerkin Method for Compressible Flows on Tetrahedral Grids
179. Remarkable Hydrogen Storage Capacity In Li-Decorated Graphyne: Theoretical Predication
180. A Hermit WENO Reconstruction-based Discontinuous Galerkin Method for the Euler Equations on Tetrahedral Grids
181. Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO2)0.2 charge trapping layer
182. Electron‐beam induced phase transformation in β‐Ag2Se thin films
183. Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
184. A Reconstructed Discontinuous Galerkin Method for the Compressible Flows on Unstructured Tetrahedral Grids
185. Thermodynamic and Kinetic Analysis of Lowtemperature Thermal Reduction of Graphene Oxide
186. Preparation and characterization of GeTe4thin films as a candidate for phase change memory applications
187. A class of Reconstructed Discontinuous Galerkin Methods for Compressible Flows on Arbitrary Grids
188. Charge Trapping Memory Characteristics of p-Si/Ultrathin Al[sub 2]O[sub 3]∕(HfO[sub 2])[sub 0.8](Al[sub 2]O[sub 3])[sub 0.2]∕Al[sub 2]O[sub 3]/Metal Multilayer Structure
189. Phase Change Behavior in Ag[sub 10]Ge[sub 15]Te[sub 75] and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag[sub 10]Ge[sub 15]Te[sub 75] Films
190. Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films
191. A TiAl2O5 nanocrystal charge trap memory device
192. Unipolar resistive switching characteristics in Co3O4 films
193. Unipolar resistive switching behaviors in amorphous lutetium oxide films
194. UV EMISSION OF TETRAGONAL ZrO2 NANOCRYSTALS EMBEDDED IN ZrSiO4 AMORPHOUS MATRIX
195. Ga2Te3 phase change material for low-power phase change memory application
196. Memristive behaviors of LiNbO3 ferroelectric diodes
197. Robust Dirac point in honeycomb-structure nanoribbons with zigzag edges
198. Conduction behavior change in amorphous LaLuO3 dielectrics based on correlated barrier hopping theory
199. The roles of B-site ions in lead strontium zirconate titanate thin films for electrically tunable device applications
200. Binary semiconductor In2Te3 for the application of phase-change memory device
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