151. MoO3/BiVO4 heterojunction film with oxygen vacancies for efficient and stable photoelectrochemical water oxidation.
- Author
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Chen, Yaqi, Yang, Minji, Du, Jinyan, Ke, Gaili, Zhong, Xiaohui, Zhou, Yong, Dong, Faqin, Bian, Liang, and He, Huichao
- Subjects
CHARGE transfer ,BISMUTH compounds ,HETEROJUNCTIONS ,OXIDATION ,PHOTOCURRENTS ,CURRENT density (Electromagnetism) - Abstract
Poor charge transfer and separation rate are the major bottlenecks for the activity and stability of BiVO
4 photoanode. Here, we introduced oxygen vacancies into MoO3 /BiVO4 heterojunction film by post-annealing the film in argon-saturated environment for improving its photoelectrochemical (PEC) water oxidation activity and stability. In comparison with the normal MoO3 /BiVO4 film, the MoO3 /BiVO4 film with oxygen vacancies is of better PEC water oxidation performance. Specifically, a higher photocurrent density of 4.1 mA/cm2 in 0.1 M Na2 SO4 at 1.1 V versus SCE was achieved on the MoO3 /BiVO4 film with oxygen vacancies, which is about 200% improved over the normal MoO3 /BiVO4 film (1.83 mA cm−2 , at 1.1 V versus SCE). In addition, the MoO3 /BiVO4 film with oxygen vacancies shows more stable activity and faster kinetics for water oxidation, without significant activity loss for 5 h reaction at 1.23 V versus RHE. The enhanced performance on such a MoO3 /BiVO4 film photoanode can be attributed to that the oxygen vacancies accelerate the charge transfer and separation rate between film/electrolyte interface, and thus improve the water oxidation activity and restrain the anodic photocorrosion simultaneously. [ABSTRACT FROM AUTHOR]- Published
- 2019
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