201. Exploring the electronic structure of BiVO4 thin films using energy-resolved electrochemical impedance spectroscopy.
- Author
-
Rocabruno-Valdés, C.I., Ugalde-Saldivar, Víctor M., Valencia-Garcia, Karen, Hernández-Gordillo, Agileo, and Rodil, Sandra Elizabeth
- Subjects
- *
THIN films , *ELECTRONIC structure , *IMPEDANCE spectroscopy , *DENSITY of states , *CONDUCTION bands , *PHOTOELECTROCHEMICAL cells - Abstract
• A method for assessing inorganic semiconductor electronic properties is suggested. • The ER-EIS analysis allowed the estimation of the valence and conduction band edges. • CB (-3.94 eV) and VB (-6.48 eV) results of the BiVO 4 are agreement with the reported values. • The band gap from ER-EIS is in correspondence with optical measurements and reported values. Bismuth vanadate (BiVO 4) is a promising photoelectrochemical water-splitting semiconductor. This study focuses on elucidating the electronic structure of BiVO 4 by analyzing energy-resolved electrochemical impedance spectroscopy (ER-EIS) data. The primary objective is to demonstrate the effectiveness of the ER-EIS, which is typically applied to organic semiconductors, in estimating the band edge positions of BiVO 4 films deposited on FTO substrates. The impedance spectra analysis as a function of an applied overpotential permits an estimation of the density of states, where the limits correspond to the valence (VB) and conduction band (CB) edge positions that determine the redox reactions the semiconductor can promote. The energy difference between the CB and VB corresponds to the material's band gap (E g). The calculated E g using ER-EIS closely matches the reported optical properties of the material, and the energy positions of the VB and CB align with the reported values for BiVO 4. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF