808 results on '"Daudin, B."'
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202. Reduction of the internal electric field in GaN/AlN quantum dots grown on thea -plane of SiC substrates
203. Deformation profile in GaN quantum dots: Medium-energy ion scattering experiments and theoretical calculations
204. Strain, size and composition of buried GaN quantum dots in AlN using grazing incidence anomalous diffraction
205. Structural properties of semiconductor nanostructures determined via X-ray anomalous diffraction (DAFS) and absorption (EXAFS)
206. Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots
207. Phase transition by Mg doping of N-face polarity GaN
208. Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy
209. GaN quantum dots grown on non‐polar a‐plane SiC by plasma‐assisted molecular beam epitaxy
210. Rare‐earth doped GaN and InGaN quantum dots grown by plasma assisted MBE
211. Raman study of strain in GaN/AlN quantum dot multilayered structures
212. Optical and morphological properties ofGaNquantum dots doped withTm
213. GaN quantum dots: from basic understanding to unique applications
214. Behavior of phonons in short period GaN-AlN superlattices
215. Nucleation and growth ofGaN∕AlNquantum dots
216. Structural and optical properties of rare‐earth doped quantum dots grown by plasma‐assisted MBE
217. Properties of self‐assembled Ga‐polar and N‐polar GaN/AlN quantum dots
218. Surfactant effect of gallium during the growth of GaN on AlN(0001¯) by plasma-assisted molecular beam epitaxy
219. Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes
220. Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
221. Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates
222. Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
223. Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE
224. Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE
225. Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
226. Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots
227. Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy
228. Modification of GaN(0001) growth kinetics by Mg doping
229. Intersubband absorptions in doped and undoped GaN/AlN quantum wells at telecommunication wavelengths
230. Recent progress in growth and physics of GaN/AlN quantum dots
231. Spectroscopy of the electron states in self-organized GaN/AlN quantum dots
232. Morphological properties of GaN quantum dots doped with Eu
233. Strain distribution in nitride quantum dot multilayers
234. GaN quantum dots by molecular beam epitaxy
235. GaN quantum dots doped with Eu
236. Temporal dependence of gallium nitride quantum dot cathodoluminescence under weak electron beam excitation
237. Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy
238. Visible red light emission from Eu‐doped GaN quantum dots grown by plasma‐assisted MBE
239. Smart Cut TM SiCOI wafers for MBE GaN epitaxy
240. Comprehensive overview on elastic strain relaxation mechanisms in nitride heterostructures: Stranski–Krastanow versus Frank–Van der Merwe growth mode
241. Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy
242. Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots
243. On the driving forces for the vertical alignment in nitride quantum dot multilayers
244. Optical properties of hexagonal and cubic GaN self-assembled quantum dots
245. Growth and optical properties of GaN/AlN quantum wells
246. In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy
247. Lattice dynamics of a strained GaN–AlN quantum well structure
248. Interfacial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy
249. Control of the morphology transition for the growth of cubic GaN/AlN nanostructures
250. Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization
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