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This review provides an overview of the different methods and computer codes that are used to interpret 2p x-ray absorption spectra of 3d transition metal ions. We first introduce the basic parameters and give an overview of the methods used. We start with the semi-empirical multiplet codes and compare the different codes that are available. A special chapter is devoted to the user friendly interfaces that have been written on the basis of these codes. Next we discuss the first principle codes based on band structure, including a chapter on Density Functional theory based approaches. We also give an overview of the first-principle multiplet codes that start from a cluster calculation and we discuss the wavefunction based methods, including multi-reference methods. We end the review with a discussion of the link between theory and experiment and discuss the open issues in the spectral analysis.

This review provides an overview of the different methods and computer codes that are used to interpret 2p x-ray absorption spectra of 3d transition metal ions. We first introduce the basic parameters and give an overview of the methods used. We start with the semi-empirical multiplet codes and compare the different codes that are available. A special chapter is devoted to the user friendly interfaces that have been written on the basis of these codes. Next we discuss the first principle codes based on band structure, including a chapter on Density Functional theory based approaches. We also give an overview of the first-principle multiplet codes that start from a cluster calculation and we discuss the wavefunction based methods, including multi-reference methods. We end the review with a discussion of the link between theory and experiment and discuss the open issues in the spectral analysis.

Linearized augmented planewaves combined with local-orbitals (LAPW + lo) are arguably the most precise basis set to represent Kohn–Sham states. When employed within real-time time-dependent density functional theory (RT-TDDFT), they promise ultimate precision achievable for exploring the evolution of electronic excitations. In this work, we present an implementation of RT-TDDFT in the full-potential LAPW + lo code exciting. We benchmark our results against those obtained by linear-response TDDFT with exciting and by RT-TDDFT calculations with the Octopus code, finding a satisfactory level of agreement. To illustrate possible applications of our implementation, we have chosen three examples: the dynamic behavior of excitations in MoS2 induced by a laser pulse, the third harmonic generation in silicon, and a pump–probe experiment in diamond. Besides, we provide further benchmark results., Deutsche Forschungsgemeinschafthttps://doi.org/10.13039/501100001659, Peer Reviewed

Thermoelektrische Bauelemente ermöglichen die Erzeugung von Elektrizität aus überschüssiger Wärme, wie sie in großen Mengen in Geräten und Prozessen entsteht. Effiziente Thermoelektrika benötigen eine hohe thermoelektrische Gütezahl, die durch elektronische und thermische Transporteigenschaften der Materialien bestimmt wird. Die Dissertation untersucht zunächst die elektronischen Transporteigenschaften zweier hochaktueller thermoelektrischer Materialien, des Schichtsystems SnSe und einer komplexen Klathrat-Legierung. Deren theoretische Beschreibung benötigt unterschiedliche Methoden, die während dieses Dissertationsprojektes implementiert, erweitert oder entwickelt wurden. Die Temperaturabhängigkeit der Leitfähigkeit von SnSe wurde mittels der Boltzmann-Transportmethode in Relaxationszeitnäherung untersucht. Wir zeigen, dass nur bei gleichzeitiger Einbeziehung von thermischer Ausdehnung des Kristallgitters und Elektron-Phonon-Streuprozessen eine gute Übereinstimmung mit Experimenten erreicht wird. Die Eigenschaften des Typ-I-Klathrats Ba8AlxSi46-x sind sowohl von der Stöchiometrie als auch von der Al-Konfiguration, d.h. der Anordnung der Al-Atome im Wirtsgitter, abhängig. Für x=16 wurde der Grundzustand als hableitend bestimmt, während Konfigurationen mit höheren Energien metallisch sind. Wir erhalten eine zuverlässige Beschreibung der elektronischen, strukturellen und Transporteigenschaften von Ba8AlxSi46-x bei endlichen Temperaturen durch Mittlungen über Konfigurationen. Mittels einer neu entwickelten Methode zur Berechnung der temperaturabhängigen effektiven Bandstruktur von Legierungen beobachten wir ein temperaturbedingtes Schließen der Bandlücke bei x=16, was mit einem Phasenübergang von partieller Ordnung zu Unordnung bei 582K einher geht. Basierend auf Gedächtnisfunktions-Modellen präsentieren wir ferner eine neue Ab-initio-Methode zur Berechnung der elektrischen Leitfähigkeit von Festkörpern mit einem Unordungspotential beliebiger Kopplungsstärke., Thermoelectric devices convert heat into electricity, thus enabling the reuse of waste heat produced by all kinds of engines. To make this conversion process profitable, materials with a high thermoelectric figure of merit, ZT, are demanded. ZT depends on electronic and thermal transport properties. In this thesis, we study the electronic transport properties of two emerging thermoelectric materials, the layered material SnSe and a complex type-I clathrate alloy. Their reliable description requires different methodologies, that has been implemented, extended, or developed during this PhD project. For SnSe, the temperature dependence of the conductivity and the Seebeck coefficient is studied using the Boltzmann transport approach in the relaxation time approximation. We show that only by simultaneously accounting for thermal lattice expansion and electron-phonon coupling, a good agreement with experiment is reached. The properties of the type-I clathrate Ba8AlxSi46-x are determined, on the one hand, by its composition, and, on the other hand, by the configuration, i.e., the arrangement of the Al atoms in the host lattice. At the charge-compensated composition x=16, the ground-state configuration is found to be semiconducting, while configurations higher in energy are metallic. We obtain a realistic description of the electronic, structural, and transport properties of Ba8AlxSi46-x at finite temperature by using configurational thermodynamic averages. From a newly developed method to compute the finite-temperature effective band structure of alloys, we observe a temperature-driven closing of the band gap for x=16, which is concomitant with a partial order-disorder phase transition at 582K. We further present a novel ab initio memory-function approach for solids that enables the calculation of the electrical conductivity of solids in a disorder potential at arbitrary coupling strength. An application of the developed formalism is demonstrated with the example of sodium

Metal halide perovskites are the first solution processed semiconductors that can compete in their functionality with conventional semiconductors, such as silicon. Over the past several years, perovskite semiconductors have reported breakthroughs in various optoelectronic devices, such as solar cells, photodetectors, light emitting and memory devices, and so on. Until now, perovskite semiconductors face challenges regarding their stability, reproducibility, and toxicity. In this Roadmap, we combine the expertise of chemistry, physics, and device engineering from leading experts in the perovskite research community to focus on the fundamental material properties, the fabrication methods, characterization and photophysical properties, perovskite devices, and current challenges in this field. We develop a comprehensive overview of the current state-of-the-art and offer readers an informed perspective of where this field is heading and what challenges we have to overcome to get to successful commercialization.& nbsp;(C)2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).

ZnO hat wegen seiner potenziellen Anwendung in elektronischen Geräten und als Katalysator viel Aufmerksamkeit erhalten. Die Struktur und Reaktivität von ZnO-Oberflächen haben eine direkte Bedeutung für die Leistung und Funktionalität dieser Geräte. Daher ist die Definition und das Verständnis der atomistischen Details von ZnO-Oberflächenstrukturen von besonderer Bedeutung. Die atomistischen Details von ZnO-Oberflächen hängen von den Präparationsverfahren ab. Nach der Kristallpräparation ist es notwendig, eine Oberflächencharakterisierung durchzuführen, um eine Verbesserung der Funktionalität und Effizienz von ZnO-basierten opto-elektronischen Bauelementen und Katalysatoren zu erreichen. Die atomistische Wahrnehmung der Reaktion zwischen einem organischen Molekül und ZnO-Oberflächen spielt eine entscheidende Rolle bei der Optimierung der Wasserstoff-on-demand-Lieferung in Brennstoffzellen. Das Verständnis der atomistischen Details von Adsorption, Diffusion und Dissoziation eines organischen Moleküls ebnet den Weg, um die Vorgänge bei der Wasserstofffreisetzung für Brennstoffzellen zu enträtseln. Mit dem Ziel, die Struktur- und Stöchiometriebestimmung mit Hilfe der XPS zu ermöglichen, präsentiere ich in dieser Arbeit die Ergebnisse einer umfassenden theoretischen Studie über die Kernniveauverschiebungen von ZnO-Oberflächenrekonstruktionen. Darüber hinaus biete ich eine gründliche Untersuchung der gemischt-terminierten Oberfläche, indem ich zunächst die Bedingungen untersuche, unter denen sich Methanol-Monolagen auf dieser Kristallfläche bilden können, und dann alle möglichen Wege für deren Reaktion erforsche. Diese Studie liefert ein umfassendes Bild, um die wahrscheinlichsten Reaktionsschritte zu identifizieren, die zur Interpretation der experimentellen Ergebnisse herangezogen werden können. Sie wird zukünftigen theoretischen Studien für ähnliche Reaktionen wie die Dehydrierung und die Kinetik der Monolagenbildung, die hier untersucht wurden, helfen., Zinc-Oxide (ZnO) has been getting much attention over the past decades because of its potential application in electronic devices and as a catalyst. The structure and reactivity of ZnO surfaces have direct relevance for the performance and functionality of these devices. Therefore, defining and understanding the atomistic details of ZnO surface structures is of particular importance. The atomistic details of ZnO surfaces depend on the preparation procedures. After the crystal preparation, it is necessary to perform a surface characterization, to achieve an improvement in the functionality and efficiency of ZnO-based opto-electronic devices and catalysts. The atomistic perception of the reaction between an organic molecule and ZnO surfaces plays a crucial role in optimizing hydrogen-on-demand delivery in fuel cells, and understanding the atomistic details of adsorption, diffusion, and dissociation of a simple organic molecule paves the way towards unraveling the procedures involved in the hydrogen liberation for fuel cells. In this work, with the aim of enabling structure and stoichiometry determination by using X-ray photoelectron spectroscopy, I present the results of a comprehensive theoretical study on the core-level shifts of ZnO surface reconstructions. Moreover, I provide a thorough investigation of the mixed-terminated (10-10) surface by first examining the conditions under which methanol monolayers can form on this crystal face and by then exploring all possible pathways for its adsorption, diffusion, and initial dehydrogenation. This study provides a comprehensive picture to identify the most probable reaction steps that can be used to interpret experimental findings and will help future theoretical studies for reactions similar to dehydrogenation of organic molecules and monolayer-formation kinetics that were studied here.

Um neue Halbleiter-Bauelemente zu entwickeln und die Effizienz bereits existierender zu verbessern, müssen neue Materialien erkundet und untersucht werden. Für Anwendungen in Hochleistungselektronik und UV-Optoelektronik ist Ga2O3 mit seiner ultra-weiten Bandlücke von 4.8 eV ein vielversprechender Kandidat. Diese Anwendung haben zu wachsendem Interesse an seinen fundamentalen elektronischen und optischen Eigenschaften geführt. Diese Dissertation präsentiert eine umfassende ab initio-Untersuchung der elektronischen Anregungen in Ga2O3, um zu dem Verständnis dieser fundamentalen Eigenschaften beizutragen. Die Arbeit besteht aus zwei Teilen: Im ersten Teil präsentieren wir eine Vielteilchen-Störungstheorie Methode zur konsistenten Berechnung der neutralen Anregungen von Valenz- und Kernelektronen in kristallinen Halbleitern. Diese ermöglicht die präzise Berechnung von Absorptions- und Streuungsspektren vom optischen bis zum Röntgenbereich. Zusätzlich präsentieren wir einen neuartigen Ausdruck für resonante inelastische Röntgenstreuung (RIXS) innerhalb unseres Vielteilchen-Formalismus, der eine detaillierte Analyse dieser Streuung erlaubt. Mit ausgewählten Beispielen demonstrieren wir das Potential unserer Implementation, die Spektren dieser verschiedenen spektroskopischen Methoden zu berechnen, zu analysieren und zu interpretieren. Im zweiten Teil der Dissertation verwenden wir unsere Methode, um die Anregungen der Valenzelektronen, sowie der Ga 1s-, Ga 2p- und O 1s-Elektronen in Ga2O3 zu berechnen. Wir finden ausgeprägte Unterschiede in den diversen Röntgenabsorptionsspektren von Ga2O3 -Polymorphen, die von der unterschiedlichen lokalen elektronischen Struktur stammen. Wir bestimmen die Zusammensetzung der Valenz- und Kernanregungen und analysieren ihre Signatur in den verschiedenen Absorptions- und Streuungsspektren. Abschließend demonstrieren wir wie RIXS einen zusätzlichen Blickwinkel auf die Valenz- und Kernanregungen und deren Wechselwirkungen ermöglicht., To develop new semiconductor devices and improve the performance of existing ones, the exploration and understanding of novel materials is required. With an ultra-wide band gap of around 4.8 eV, Ga2O3 is a promising candidate for applications in UV-optoelectronics and power electronics. These applications have led to an increasing interest in its fundamental electronic and optical properties. In this thesis, we present a comprehensive first-principles study of the electronic excitations of Ga2O3 to contribute to the understanding of these fundamental properties. The thesis consists of two parts: In the first part, we present an all-electron many-body perturbation theory (MBPT) approach for consistent calculations of neutral core and valence excitations. It enables accurate calculation of absorption and inelastic scattering spectra in the optical, UV, and x-ray region. While these spectroscopic techniques probe either the valence or core excitations, resonant inelastic x-ray scattering (RIXS) reveals the interplay between the two. We present a novel expression for the RIXS cross section within our all-electron many-body formalism that allows for a detailed analysis of this interplay. We demonstrate the capability of our implementation to compute, analyze, and interpret the different spectroscopic techniques with selected examples of prototypical insulators. In the second part, we apply our approach to study valence excitations, as well as excitations of various core states, i.e. the gallium 1s, gallium 2p, and oxygen 1s states in Ga2O3 . Comparing the core spectra of Ga2O3 polymorphs, we find distinct differences that originate from their local environments. We determine the composition of valence and core excitons, and analyze their signatures in the various absorption and scattering spectra. Finally, we demonstrate how RIXS can be employed to provide a different viewpoint on the core and valence excitations and unravel the interplay between them.

Two-dimensional electron gases (2DEG), arising due to quantum confinement at interfaces between transparent conducting oxides, have received tremendous attention in view of electronic applications. Here, we explore the potential of interfaces formed by two lattice-matched wide-gap oxides of emerging interest, i.e., the polar, orthorhombic perovskite LaInO3 and the nonpolar, cubic perovskite BaSnO3, employing first-principles approaches. We find that the polar discontinuity at the interface is mainly compensated by electronic relaxation through charge transfer from the LaInO3 to the BaSnO3 side. This leads to the formation of a 2DEG hosted by the highly dispersive Sn-s-derived conduction band and a 2D hole gas of O-p character, strongly localized inside LaInO3. We rationalize how polar distortions, termination, thickness, and dimensionality of the system (periodic or non-periodic) can be exploited in view of tailoring the 2DEG characteristics, and why this material is superior to the most studied prototype LaAlO3/SrTiO3., Peer Reviewed

The Open Databases Integration for Materials Design (OPTIMADE) consortium has designed a universal application programming interface (API) to make materials databases accessible and interoperable. We outline the first stable release of the specification, v1.0, which is already supported by many leading databases and several software packages. We illustrate the advantages of the OPTIMADE API through worked examples on each of the public materials databases that support the full API specification.

Recent developments in attosecond technology led to table-top x-ray spectroscopy in the soft x-ray range, thus uniting the element- and state-specificity of core-level x-ray absorption spectroscopy with the time resolution to follow electronic dynamics in real-time. We describe recent work in attosecond technology and investigations into materials such as Si, SiO2, GaN, Al2O3, Ti, and TiO2, enabled by the convergence of these two capabilities. We showcase the state-of-the-art on isolated attosecond soft x-ray pulses for x-ray absorption near-edge spectroscopy to observe the 3d-state dynamics of the semi-metal TiS2 with attosecond resolution at the Ti L-edge (460 eV). We describe how the element- and state-specificity at the transition metal L-edge of the quantum material allows us to unambiguously identify how and where the optical field influences charge carriers. This precision elucidates that the Ti:3d conduction band states are efficiently photo-doped to a density of 1.9 × 1021 cm−3. The light-field induces coherent motion of intra-band carriers across 38% of the first Brillouin zone. Lastly, we describe the prospects with such unambiguous real-time observation of carrier dynamics in specific bonding or anti-bonding states and speculate that such capability will bring unprecedented opportunities toward an engineered approach for designer materials with pre-defined properties and efficiency. Examples are composites of semiconductors and insulators like Si, Ge, SiO2, GaN, BN, and quantum materials like graphene, transition metal dichalcogens, or high-Tc superconductors like NbN or LaBaCuO. Exiting are prospects to scrutinize canonical questions in multi-body physics, such as whether the electrons or lattice trigger phase transitions., Peer Reviewed, Postprint (published version)