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Electronic components must be tested to allow for safe and reliable missions in radiation environments. The METU Defocusing Beamline (METU-DBL) was installed in the R&D room at the Particle Accelerator Facility (PAF) of Turkish Energy, Nuclear and Mineral Research Agency (TENMAK). This facility was established in accordance with the European Space Agency (ESA), European Space Components Coordination (ESCC), No: 25100 standard to conduct proton irradiation tests for electronic components and various materials to be used in the space environment. METU-DBL uses beam elements such as quadrupole magnets to amplify the beam and collimators to reduce the flux, as per the specifications of the standard. A pretest setup was constructed, and this system was operated for a total of 17 hours for three months before the METU-DBL final design was assembled. The first protective collimator is made of stainless steel 316L and was used during the period of pretests. As a result of these irradiations, the emerged radioisotopes in the collimator were observed and measured in situ with a NaI detector. These measurements were compared with the FLUKA simulations 120 days after the last irradiation. Among fourteen radioisotopes, only six of them with activity above 1.0×101 Bq/cm3 were matched. [ABSTRACT FROM AUTHOR]

Goos-Hänchen (GH) shift, an interference phenomenon describing the lateral shift of the reflected beam along the interface during total internal reflection, has attracted great interests in the field of quantum transport in two-dimensional materials. In particular, the GH effect generates a novel pseudospin-dependent scattering effect in graphene, which in turn results in an 8 e 2 / h conductance step in the bipolar junctions. Here, we reveal that a barrier region with effective barrier strength χ can greatly enrich the GH effect in graphene junctions. In contrast to the conventional case where the negative shift is allowed only in the p - n junction, the thin barrier enables both negative and positive spatial shifts in p I n and n I n junctions, where I represents the barrier region. More interestingly, the lowest channel degeneracy can be efficiently varied by tuning χ in both the symmetric p I n I p and the asymmetric pn I p junctions, leading to a highly controllable switch that switches the conductance between 8 e 2 / h and 4 e 2 / h. These results advance the knowledge of GH effects in electronic materials and suggest experimental avenues for its observation and manipulation. [ABSTRACT FROM AUTHOR]

Solid-state quantum emitters need accurate nanofabrication platforms with high process yields in order to be used in practical quantum information technologies. Self-assembled semiconductor quantum dots have shown to be among finest choices to fulfil the requirements of a variety of innovative quantum photonic devices due to their exceptional emission features. The aim of this research is to develop quantum electronic material nanofabrication in manufacturing industry based on spectroscopy techniques. Using optical quantum electronics, IR absorption spectroscopy, Raman scattering, and surface-enhanced Raman scattering for nanomaterial characterization, the proposed model for manufacturing industrial material nanofabrication is described here. Here, we demonstrate the nanofabrication of polymer nanostructures with better than 100 nm spatial resolution, chemical identification at nanometer scale, and nanometer-scale chemical imaging. When employing either band, particularly spectrally sharp band at 1000 cm−1, inverse ratio of these typical death periods is known as the "cell death enhancement factor." These findings significantly support the prospective future application of this approach to investigate the effectiveness, dynamics, and molecular processes of different manufacturing industry defect detection. [ABSTRACT FROM AUTHOR]

Gapless linear band structure quantum electronic materials play important roles in quantum computing developments due to their novel superb electronic transport properties and two-dimensional (2D) gateable device possibility. However, the sensitive surface of quantum electronic materials easily reacted with ambient air molecules so as to change their intrinsic transport properties. We review a series of our works to show the importance of surface reactions in quantum electronic materials, such as graphene. By using different electronic transport facilities and in situ vacuum annealing methods, we are able to gently clean the absorbed air molecules on graphene so as to change the carrier densities and the electronic transport properties, which is a great improvement for 2D-quantum material-based quantum chips and computing devices. [ABSTRACT FROM AUTHOR]

Researchers have developed a one-step plug-and-probe technique using van der Waals assimilated high-k dielectrics and contacts to fabricate top-gated transistors for delicate electronic materials. This technique allows for the integration of materials such as two-dimensional semiconductors and lead halide perovskites, which are important for compact silicon-based electronics but are incompatible with traditional fabrication methods. The plug-and-probe approach enables the creation of atomically clean dielectric interfaces and exhibits excellent gate configuration and low gate leakage. It has the potential for scalable fabrication and can be applied to a variety of materials, including large-area chemical vapor deposition-grown transition metal dichalcogenides and lead halide perovskite thin films. [Extracted from the article]

Objective: The aim of this study was to review the selection criteria of resin cements for different types of partial coverage restorations (PCRs) and investigate if the type of restorations or restorative materials affect the type of selected resin cement. Materials and Methods: An electronic search (1991–2023) was performed in PubMed, Medline, Scopus, and Google Scholar databases by combinations of related keywords. Results: A total of 68 articles were included to review the selection criteria based on the advantages, disadvantages, indications, and performance of resin cements for different types of PCRs. Conclusions: The survival and success of PCRs are largely affected by appropriate cement selection. Self‐curing and dual‐curing resin cements have been recommended for the cementation of metallic PCRs. The PCRs fabricated from thin, translucent, and low‐strength ceramics could be adhesively bonded by light‐cure conventional resin cements. Self‐etching and self‐adhesive cements, especially dual‐cure types, are not generally indicated for laminate veneers. [ABSTRACT FROM AUTHOR]

Despite having an asymmetric structure, 2‐(thiopyran‐4‐ylidene)‐1,3‐benzodithiole (TP‐BT) is a good p‐type semiconductor containing isotropic three‐dimensional (3D) intermolecular interactions. Moreover, its π‐extended analogs can potentially work as organic electronic materials. Herein, a fused‐type π‐extended analog containing an extra benzene ring on the benzodithiole unit, i. e. 2‐(thiopyran‐4‐ylidene)‐1,3‐naphtho[2,3‐d]dithiole (TP‐NT), and three σ‐bonded‐type π‐extended analogs, i. e. phenyl‐, naphthyl‐, and anthryl‐substituted analogs (Ph‐TP‐BT, Nap‐TP‐BT, and Ant‐TP‐BT, respectively), were prepared and their molecular arrangements and organic field‐effect transistor (OFET) properties were investigated. TP‐NT formed a herringbone arrangement with 3D intermolecular interactions similar to that of the parent TP‐BT. Meanwhile, Ant‐TP‐BT formed a bilayer‐type layered herringbone arrangement. Since the highest occupied molecular orbital and the lowest unoccupied molecular orbital are located on the TP‐BT and anthracene units, respectively, a unique donor–acceptor separated network was formed. In OFETs prepared via a vapor deposition method using the σ‐bonded‐type analogs, slightly lower mobilities (0.1 to 8×10−3 cm2/Vs) than that of TP‐NT (0.1 cm2/Vs) were observed. Upon photo‐irradiation, the OFET of Ant‐TP‐BT exhibited a larger threshold voltage shift and an increase in the off current compared with TP‐NT. The σ‐bonded‐type analogs showed a larger photo‐response effect than TP‐NT derived from the donor–acceptor molecular structure. [ABSTRACT FROM AUTHOR]

Summary: Electrochromic (EC) glazing has garnered significant attention recently as a crucial solution for enhancing energy efficiency in future construction and automotive sectors. EC glazing could significantly reduce the energy usage of buildings compared to traditional blinds and glazing. Despite their commercial availability, several challenges remain, including issues with switching time, leakage of electrolytes, production costs, etc. Consequently, these areas demand more attention and further studies. Among inorganic-based EC materials, tungsten oxide nanostructures are essential due to its outstanding advantages such as low voltage demand, high coloration coefficient, large optical modulation range, and stability. This review will summarize the principal design and mechanism of EC device fabrication. It will highlight the current gaps in understanding the mechanism of EC theory, discuss the progress in material development for EC glazing, including various solutions for improving EC materials, and finally, introduce the latest advancements in photo-EC devices that integrate photovoltaic and EC technologies.

Metamaterials are artificially engineered materials that exhibit naturally unavailable properties like negative electric permittivity and magnetic permeability. The key role lies in the advancement of meta-devices according to engineered micro-architectures. This review encompasses the characteristics of meta-materials in the progress of devices like implantable antennas in Medical Implant Communication System (MICS) with the range of 401–406 MHz (where the core band range is of the order of 402–405 MHz communication link of the network, wearable tunable, with sensing functionalities to the body worn biosensors. It also suggests the knowledge of targeted patients’ inclination towards implantables rather wearables, and relevant surveys captured on wearable devices.

Mixed ionic/electronic conductors (MIECs) are desirable materials for next-generation electronic devices and energy storage applications. Polymeric MIECs are attractive from the standpoint that their structure can be controlled and anticipated to have mechanically robust properties. Here, we prepare and investigate conjugated copolymers containing thiophene and selenophene repeat units and their homopolymer counterparts. Specifically, thiophene bearing a triethylene glycol (EG3) side chain was polymerized and copolymerized with dodecyl thiophene/selenophene monomers. The synthesis leads to a class of copolymers that contain either S or Se and are blocky in nature. The Li-ion conductivity of ionically doped copolymers, P3DDT-s-P3(EG3)T and P3DDS-s-P3(EG3)T (9.7 × 10−6 and 8.2 × 10−6 S/cm, respectively), was 3–4 fold higher than that of the ionically doped constituent homopolymer, P3(EG3)T (2.2 × 10−6 S/cm), at ambient conditions. The electronic conductivity of the oxidatively doped copolymers was significantly higher than that of the constituent homopolymer P3(EG3)T, and most notably, P3DDS-s-P3(EG3)T reached ∼7 S/cm, which is the same order of magnitude as poly(3-dodecylthiophene) and poly(3-dodecylselenophene), which are the highest oxidatively doped conductors based on control experiments. Our findings provide implications for designing new MIECs based on copolymerization and the incorporation of heavy atom heterocycles. [ABSTRACT FROM AUTHOR]

Abstract Intrinsically stretchable electronics have gained extensive interest recently, due to their promising application in wearable electronics, bio‐integrated electronics, and healthcare devices. All of the components of such stretchable electronics need to be stretchable and mechanically robust to accommodate complex movements. The design and fabrication of robust intrinsically stretchable electronic materials represent a critical challenge in this emerging field. In this review, we focus on the latest studies of intrinsically stretchable electronics, covering the strategies for achieving intrinsically stretchable electronic materials, the recent progresses in the key electronic materials including intrinsically stretchable conductors, semiconductors, dielectrics, and the devices produced by them. Finally, some suggestions and prospects for the future development of intrinsically stretchable electronics are proposed.

Quantum-tunneling metal–insulator-metal (MIM) diodes have emerged as a significant area of study in the field of materials science and electronics. Our previous work demonstrated the successful fabrication of these diodes using atmospheric pressure chemical vapor deposition (AP-CVD), a scalable method that surpasses traditional vacuum-based methods and allows for the fabrication of high-quality Al2O3 films with few pinholes. Here, we show that despite their extremely small size 0.002 µm2, the MIM nanodiodes demonstrate low resistance at zero bias. Moreover, we have observed a significant enhancement in resistance by six orders of magnitude compared to our prior work, Additionally, we have achieved a high responsivity of 9 AW−1, along with a theoretical terahertz cut-off frequency of 0.36 THz. Our approach provides an efficient alternative to cleanroom fabrication, opening up new opportunities for manufacturing terahertz-Band devices. The results of our study highlight the practicality and potential of our method in advancing nanoelectronics. This lays the foundation for the development of advanced quantum devices that operate at terahertz frequencies, with potential applications in telecommunications, medical imaging, and security systems. [ABSTRACT FROM AUTHOR]

To overcome the energy and environmental crisis, the development of efficient, sustainable photocatalysts to convert inexhaustible solar energy into chemical energy is of great significance. Due to their unique optoelectronic properties, organic electronic materials have been translated into the photocatalytic field. These emerging photocatalysts are attractive because of their metal-free nature, chemical stability, and structural diversity. However, as many small molecules fail to absorb visible light solely, incorporating them into crosslinked frameworks is found to be an effective strategy to extend the conjugation and enhance visible-light absorption. In addition, the photophysical properties of these heterogeneous materials can be adjusted through structural modification and linkage engineering. Finally, these insoluble photocatalysts exhibit good recyclability and reusability. As a representative illustration, this feature article describes recent examples of the use of two types of organic electronic materials including phenothiazine and truxene in heterogeneous photocatalytic organic transformations. The synthesis and key photophysical properties of both organic electronic material-based photocatalysts are discussed combined with specific synthetic applications. We anticipate this feature article will stimulate the implementation of more diverse organic electronic materials in the field of photocatalysis, which may lead to unprecedented synthetic applications. [ABSTRACT FROM AUTHOR]

Electronic skins (e-skins) aim to replicate the capabilities of human skin by integrating electronic components and advanced materials into a flexible, thin, and stretchable substrate. Electrical impedance tomography (EIT) has recently been adopted in the area of e-skin thanks to its robustness and simplicity of fabrication compared to previous methods. However, the most common EIT configurations have limitations in terms of low sensitivities in areas far from the electrodes. Here we combine two piezoresistive materials with different conductivities and charge carriers, creating anisotropy in the sensitive part of the e-skin. The bottom layer consists of an ionically conducting hydrogel, while the top layer is a self-healing composite that conducts electrons through a percolating carbon black network. By changing the pattern of the top layer, the resulting distribution of currents in the e-skin can be tuned to locally adapt the sensitivity. This approach can be used to biomimetically adjust the sensitivities of different regions of the skin. It was demonstrated how the sensitivity increased by 500% and the localization error reduced by 40% compared to the homogeneous case, eliminating the lower sensitivity regions. This principle enables integrating the various sensing capabilities of our skins into complex 3D geometries. In addition, both layers of the developed e-skin have self-healing capabilities, showing no statistically significant difference in localization performance before the damage and after healing. The self-healing bilayer e-skin could recover full sensing capabilities after healing of severe damage. [ABSTRACT FROM AUTHOR]

High-voltage LiCoO 2 (LCO) is currently the most promising cathode material for portable electronic devices, however, its further development is hindered by the accelerated structural decline that results from increasing the cut-off voltage. This article presents a facile solid-phase sintering approach for synthesizing Nd 2 O 3 -modified LCO in a one-step process. The crystal parameters of LCO after Nd 2 O 3 modification increase, and a coating layer of Nd 2 O 3 was formed on the surface. Meanwhile, a fraction of Nd3+ ions diffused into the surface layer of LCO to replacing Li + sites, which leads to an increase in lattice parameters. The electrochemically inert Nd3+ can serve as an anchoring pillar within the Li layer, playing a role in enhancing lattice stability. Moreover, the proportion of lattice oxygen in the Nd4000 structure was determined to be 56.82%, which is significantly higher than that of bare LCO (51.81%), leading to an improved structural stability. The Nd 2 O 3 modification also significantly suppressed the side reactions at the electrode-electrolyte interface, thereby reducing the thickness of the CEI film and increasing the Li+ diffusion rate, ultimately resulting in superior electrochemical performance. Notably, the optimized Nd4000 exhibited a capacity retention of 86.19% after 300 cycles at 1.0C and 3.0∼4.5 V, while bare LCO only retained 38.63% of its initial capacity. [ABSTRACT FROM AUTHOR]

This article investigates the effect of different magnetic fields on modulating the alignment of graphene nanoplatelets (GNPs) and their impact on the thermal conductivity of epoxy nanocomposites. Various nanocomposite specimens were fabricated with different GNP contents by using magnetically fieldaligned GNPs in the fabrication process to enhance the thermal conductivity. The results showed that the in-plane thermal conductivity of the Bmf (Bidirectional magnetic field) sample with 5 wt% GNPs added reached 0.75 W m-1 K-1, which is 276.6% higher than that of pure epoxy resin and the anisotropy coefficient (Kk/K?) reached 3.3. In addition, temperature rise tests were performed to simulate the thermal conductivity of nanocomposites used as an electronic packaging material, and the results indicated that the composites achieved a significant increase in in-plane thermal conductivity with a lower amount of filler. This provides valuable insights into the preparation of thermally conductive composites and demonstrates their potential as a thermal management packaging material for next-generation electronic devices. [ABSTRACT FROM AUTHOR]

A lead-free brownmillerite ferroelectric material LiBiFe2O5 (LBFO) has been synthesized via a solid-state reaction technique. Using the procedure of N-TREOR method of X-ray diffraction, the crystal structure of the prepared sample is found to be monoclinic with lattice parameters: a = 13.6726 Å, b = 4.1560 Å, c = 8.5317 Å, and β = 102.89˚. Based on analysis of electrical data, the existence of Koop's and Maxwell–Wagner relaxation phenomena and dielectric relaxation in the material has been confirmed. This analysis has also shown a high impact of the dielectric permittivity (ϵr) and low tangent loss (tanδ) on using the material in some electronic devices. A detailed study of the frequency-temperature-dependent ac conductivity has suggested the presence of Jonscher's universal power law in the material. As the material has thermistor constant (β) values of 4019.26, 11535.75, and 484.36 in different temperature ranges indicating high-temperature NTC thermistor application. [ABSTRACT FROM AUTHOR]

Ternary copper halide pseudo‐perovskites are in the forefront of research as potential active materials in light emission applications. The optoelectronic properties of these compounds can be fine‐tuned by the preparation of mixed‐halide compositions. After irradiation, self‐trapped excitonic states are formed in these materials. However, the emission from these self‐trapped states is not yet fully understood. In this work, mixed‐halide Cs3Cu2X5 films (where X: I and/or Br) are prepared by a simple spray‐coating method. Using ultraviolet photoelectron spectroscopy, the changes in optoelectronic properties are linked to the electronic structure of these materials. It is revealed that the incorporation of bromide into the lattice makes the emission process of these materials more vulnerable to trap states. By combining the different spectroscopic characterization techniques, the exact band structure of these compounds is determined, and the different processes are translated to the absolute energy scale. As an alternative excitation mechanism of self‐trapped states, α‐particles are used to induce radioluminescence response. The Cs3Cu2X5 films exhibit composite decay patterns, most likely attributed to a multitude of different trap state‐mediated recombination processes. [ABSTRACT FROM AUTHOR]

Nano-enhanced phase change materials (Nano-PCMs) are emerging as pivotal solutions in electronic cooling, primarily attributed to their remarkable energy storage and release abilities within confined spaces. These Nano-PCMs amalgamate phase change materials with nanoscale Aluminum Oxide (Al2O3) particles, elevating their thermal performance. Al2O3 nanoparticles employ a heat-based energy absorption mechanism, capturing thermal energy during temperature elevations and relinquishing it during cooling phases. This sets Nano-PCMs apart from conventional PCMs, especially for electronic cooling applications. Nano-PCMs find extensive use in electronic devices and data centers, contributing significantly to enhanced energy efficiency and reduced cooling expenditures. The selection of specific PCMs and Al2O3 nanoparticles depends on the targeted application. This study employs a 3D simulation to scrutinize heat distribution in a PCM/Nano-PCM-based heat sink, subject to variable heat fluxes ranging from 6 to 10 kW/m2, enabling a comprehensive evaluation of heat dissipation over time. The findings underscore the pivotal role of Al2O3 nanoparticles in enhancing the heat sink's performance. At 6 kW/m2 input, Nano-PCMs without fins reduce charging time by 6%, 11%, and 51% for Al2O3 nanoparticle volume fractions (f) of 1%, 2.5%, and 5% in comparison to Pure-PCM (f = 0%). Nano-PCMs with fins exhibit remarkable charging time reductions of 85%, 87%, and 89% for f values of 69%, 78%, and 89% at 6 kW/m2. These results emphasize the superior heat transfer characteristics of Al2O3-infused Nano-PCMs, offering a compelling solution for efficient electronic cooling. [ABSTRACT FROM AUTHOR]

Lead-free ceramics based on bismuth sodium lanthanum titanate (Bi0.4871Na0.4871La0.0172TiO3: BNLT) and barium titanate (BaTiO3: BT) were prepared by a modified two-step mixed-oxide method. Effects of BT content on the phase transition, thermal expansion behavior, mechanical and electrical properties of lead-free BNLT-BT ceramics were studied. The Burn's temperature and local polarizations were estimated from the thermal expansion data. Various aspects of understanding the polarization behavior and other effects in this system have also been investigated and discussed. The 0.96BNLT-0.04BT ceramics have shown the d33 value of 135 pC/N. The coercive field (Ec) and remanent polarization (Pr) were found to be 24 kV/cm and 9.0 µC/cm2, respectively. This may be useful in the future development of multifunctional lead-free materials in electronic applications. [ABSTRACT FROM AUTHOR]

A thermodynamic description for the Fe-Nd-B-Cr quaternary system has been developed on the basis of six constituent binary systems and four critical ternary systems using the CALPHAD (CALculation of PHAse Diagrams) method, which is based on the fact that a phase diagram is a representation of the thermodynamic properties of a system. The Fe-B binary system is modified, and Fe-Nd-Cr and Fe-Cr-B ternary systems are thermodynamically reassessed in order to obtain more reasonable thermodynamic parameters and more accurate phase relations. The assessment results for the Fe-Nd-Cr and Fe-Cr-B ternary systems are in good agreement with the available experimental phase relations, including the liquidus surface projection and the vertical sections, while for the other two ternary systems, the B-Nd-Cr and the Fe-Nd-B systems, the thermodynamic parameters are mainly adopted from optimization results reported in the literature, with slight modifications for the compatibility of all the constituent binary systems. Based on the metastable experimental information, a reasonable, self-consistent, and comprehensive thermodynamic description of the Fe-Nd-B-Cr quaternary system is developed, which is of interest for electronic and magnet materials. The developed thermodynamic description can be further extended as a thermodynamic database for permanent magnet alloy design. [ABSTRACT FROM AUTHOR]

Phosphorus (P) plays a crucial role in enhancing the properties of electronic packaging materials, making the selection of a reliable method for rapid detection of P elements a vital task. This study introduces phosphorus-molybdenum yellow spectrophotometry as an effective detection method for the precise and quick control of P content in electronic packaging materials, thereby boosting detection efficiency. Copper-silver-phosphorus (Cu-Ag-P) alloys were selected as the experimental material. A standard curve was constructed using specific parameters: a wavelength of 420 nm, 6 mL of nitric acid solution, 3 mL of ammonium metavanadate solution, 5 mL of ammonium molybdate solution, and a reaction time of 45 min. The results showed that the standard curve complied with the Beer–Lambert Law within a P content range of 0–7%. In comparison to detection results using inductively coupled plasma atomic emission spectrometry (ICP-AES), phosphorus-molybdenum yellow spectrophotometry was found to be simple in principle, convenient in operation, and low in cost. Thus, it is suitable for practical production detection of Cu-Ag-P alloy. [ABSTRACT FROM AUTHOR]

Indium, a rare metal, is created incidentally during the zinc refining process. When a zinc metal is produced, valuable elements, such as indium, are recovered and reused. The sulfide minerals, sphalerite, galena, and chalcopyrite, are all common hosts for indium metals. Indium metals of varying purities (from 99% to 99.9%) are used in many different commercial, other exclusive, specialty, dentistry, and research and development settings. In the production of indium phosphide and related select bulk single crystals, such as InP, InAs, InSb, etc., and select multilayered epitaxial material-systems based device structures, such as InGaAs/InP, InGaAsP/InP, etc., an ultrahigh purity (99.99999%) indium metal is used as one of the initial and primary input materials. light-emitting diodes, infrared detectors, lasers, and other components cannot be made without these device topologies. Triple junction solar cells made of GaInP, GaAs, and Ge with 40% conversion efficiency are being developed for use in space. Metal-organic and molecular beam epitaxial methods utilize trimethyl/triethyl-indium-epi-precursors, the high purity indium derivatives, as starting materials to develop and manufacture multilayered structures of InGaAs/InP, InGaAsP/InP, InGaN/InP AlInN, etc. The purpose of this review is to quickly touch on indium mineral sources, important uses for different indium metal grades, and the processes needed to refine, purify, and ultrahigh purify indium to higher purity levels using a zone refining–melting–leveling process, as well as impurity segregation considerations. The use of vacuum, inert gas environments, and an external electromagnetic field to efficiently segregate, levitate, stir, homogenize, and mix the molten zone/melt interface area (region) as well as purity analyses at ppb levels, class clean room, and packaging concepts were also discussed. This review also touched briefly on the use of ultrahigh purity indium in the preparation of TMIn, TEIn, and InCl precursors necessary for the growth of device structures by molecular beam, metal-organic vapor phase, atomic layer epitaxial, and chemical vapor deposition processes. Purifying and preparing polycrystalline indium to a type 7 N purity level as well as standardization and criticality testing for fine-tuning system parameters are essential parts of developing the purification process technology. It also highlights various compound semiconductors and epitaxial systems, such as high purity indium compounds, such as indium phosphide, for cutting-edge electronic applications. Material yield enhancement, impurity management (including C, O, N, and others), consistent results, impurity reduction (down to the ppb level), and class clean packaging are all active topics of research and development. There has been a rise in demand for ultrapure metals (7–10 N) with stringent purity criteria in the aerospace and defense sectors, where they are used in cutting-edge nanoelectronic applications. This literature review delves into these and related topics regarding the production of ultrahigh purity indium. The major objective of this review is to provide a concise summary of the research and development progress made toward the ultrahigh purity (7N-99.99999%) indium preparation and its epitaxial electronics application considerations as of the time of this writing. [ABSTRACT FROM AUTHOR]

Recent observations of macroscopic quantum condensation using electron-hole (e-h) bilayers have activated the research of its application to electronics. However, to the best of our knowledge, no attempts have been made to observe the condensation in silicon, the major material in electronics, due to the lack of technology to form closely-packed and uniform bilayers. Here, we propose a method to meet such requirements. Our method uses the transient response of carriers to a rapid gate-voltage change, permitting the self-organized bilayer formation at the metal-oxide-semiconductor interface with an e-h distance as small as the exciton Bohr radius. Recombination lifetime measurements show that the fast process is followed by a slow process, strongly suggesting that the e-h system changes its configuration depending on carrier density. This method could thus enable controlling the phase of the e-h system, paving the way for condensation and, ultimately, for low-power cryogenic silicon metal-oxide-semiconductor devices. Recent observations of macroscopic quantum condensation using electron-hole (e-h) bilayers have activated the research of its application to electronics. The authors propose and demonstrate a method for the formation of a self-organized bilayer at the Si MOS interface with an e-h distance of the order of the exciton Bohr radius, which paves the way for condensation and, ultimately, low-power cryogenic Si MOS devices. [ABSTRACT FROM AUTHOR]

In this computational study, a novel borophene polymorph, Ogee-Borophene, characterized by irregular decagon-shaped hollows was reported. The structure involves a deviation from hexagonal configurations found in all other known borophene polymorphs. The decagon-shaped hollow is highly related to the anisotropy of the structure, which results in three types of boron atoms with different electronic properties in the structure. In the study, the electronic structure and density of states of this novel structure were investigated with the help of density functional theory calculations. The electronic structure of Ogee-Borophene shows Dirac cone formations near the Fermi level. The discovery of a novel borophene polymorph, Ogee-Borophene, with irregular-shaped hollows represents a different point of view in the 2D materials field. The unique electronic properties of this material suggest that Ogee-Borophene has the potential to be used in a variety of applications, including transistors, and selective sensor applications without the need for additional doping. [ABSTRACT FROM AUTHOR]

In this study, regioselectively controlled direct arylation of dithieno[3,2‐b:2,3'‐d]pyrroles (DTPs) is reported. By carefully selecting the catalytic system, Pd source, ligand, and additives, we achieved either selective N‐arylation or unprecedented β‐arylation and β,β′‐diarylation of the DTP core through C−H activation when reacting unsubstituted H‐DTP with 9‐anthracenyl halides. For N‐substituted DTPs, we obtained regioselective carboxylate‐assisted arylation of the α‐position(s). Consequently, depending on the catalytic system and substitution at the DTP nitrogen, we successfully synthesized novel regioselectively substituted DTPs, including N‐aryl, rarely reported β‐aryl, β,β'‐diaryl, α‐aryl, and α,α'‐diaryl scaffolds. These compounds can be straightforwardly prepared and further functionalized for applications as organic electronic materials. [ABSTRACT FROM AUTHOR]

A stretchable display would be the ultimate form factor for the next generation of displays beyond the curved and foldable configurations that have enabled the commercialization of deformable electronic applications. However, because conventional active devices are very brittle and vulnerable to mechanical deformation, appropriate strategies must be developed from the material and structural points of view to achieve the desired mechanical stretchability without compromising electrical properties. In this regard, remarkable findings and achievements in stretchable active materials, geometrical designs, and integration enabling technologies for various types of stretchable electronic elements have been actively reported. This review covers the recent developments in advanced materials and feasible strategies for the realization of stretchable electronic devices for stretchable displays. In particular, representative strain‐engineering technologies for stretchable substrates, electrodes, and active devices are introduced. Various state‐of‐the‐art stretchable active devices such as thin‐film transistors and electroluminescent devices that consist of stretchable matrix displays are also presented. Finally, the future perspectives and challenges for stretchable active displays are discussed. [ABSTRACT FROM AUTHOR]

Porous crystalline materials usually include metal–organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems. [ABSTRACT FROM AUTHOR]

Heterostructures between conventional superconductors and materials with different electronic ground states have emerged as a powerful method for exploring the exotic superconducting properties induced by the proximity effect. Here, we investigate Andreev transport through the interface between an s-wave superconductor Nb and a type-II Wely semimetal NbIrTe4. The differential conductance measurement reveals an anomalous zero-bias conductance peak and prominent subgap structures at low temperatures. Furthermore, we found that these subgap structures are not only related to the interface coupling strength but also influenced by the thickness of the NbIrTe4 flake. For thin devices (≤100 nm), the differential conductance spectra only exhibit a single-gap structure. While in thicker devices (∼150 nm), we observed the distinct double-gap structure, which is likely to originate from the proximity-induced superconductivity gap on the bulk and surface of the NbIrTe4 flakes. These results can provide a good reference for understanding the superconducting phase in type-II Weyl semimetals and take a step toward its future application in the field of superconducting electronics. [ABSTRACT FROM AUTHOR]

Highlights: Compared to the n-type two-dimensional (2D) semiconductors, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in potential applications. Here, the discovery and preparation of p-type 2D semiconductors are very important and meaningful. This review presents a timely and in-depth overview on the preparation and applications of p-type 2D semiconductors, which would help the related researchers to grasp the dynamics of this field and thus lay the foundations for their potential application in electronics and optoelectronics. Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top–down and bottom–up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high-κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics. [ABSTRACT FROM AUTHOR]

Heterostructures between conventional superconductors and materials with different electronic ground states have emerged as a powerful method for exploring the exotic superconducting properties induced by the proximity effect. Here, we investigate Andreev transport through the interface between an s-wave superconductor Nb and a type-II Wely semimetal NbIrTe4. The differential conductance measurement reveals an anomalous zero-bias conductance peak and prominent subgap structures at low temperatures. Furthermore, we found that these subgap structures are not only related to the interface coupling strength but also influenced by the thickness of the NbIrTe4 flake. For thin devices (≤100 nm), the differential conductance spectra only exhibit a single-gap structure. While in thicker devices (∼150 nm), we observed the distinct double-gap structure, which is likely to originate from the proximity-induced superconductivity gap on the bulk and surface of the NbIrTe4 flakes. These results can provide a good reference for understanding the superconducting phase in type-II Weyl semimetals and take a step toward its future application in the field of superconducting electronics. [ABSTRACT FROM AUTHOR]

2D iodine structures under high pressures are more attractive and valuable due to their special structures and excellent properties. Here, electronic transport properties of such 2D iodine structures are theoretically studied by considering the influence of the metal-element doping. In equilibrium, metal elements in Group 1 can enhance the conductance dramatically and show a better enhancement effect. Around the Fermi level, the transmission probability exceeds 1 and can be improved by the metal-element doping for all devices. In particular, the device density of states explains well the distinctions between transmission coefficients originating from different doping methods. Contrary to the "big" site doping, the "small" site doping changes transmission eigenstates greatly, with pronounced electronic states around doped atoms. In non-equilibrium, the conductance of all devices is almost weaker than the equilibrium conductance, decreasing at low voltages and fluctuating at high voltages with various amplitudes. Under biases, K-big doping shows the optimal enhancement effect, and Mg-small doping exhibits the most effective attenuation effect on conductance. Contrastingly, the currents of all devices increase with bias linearly. The metal-element doping can boost current at low biases and weaken current at high voltages. These findings contribute much to understanding the effects of defects on electronic properties and provide solid support for the application of new-type 2D iodine materials in controllable electronics and sensors. [ABSTRACT FROM AUTHOR]

Recently, two-dimensional (2D) materials and their heterostructures have been recognized as the foundation for future brain-like neuromorphic computing devices. Two-dimensional materials possess unique characteristics such as near-atomic thickness, dangling-bond-free surfaces, and excellent mechanical properties. These features, which traditional electronic materials cannot achieve, hold great promise for high-performance neuromorphic computing devices with the advantages of high energy efficiency and integration density. This article provides a comprehensive overview of various 2D materials, including graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), and black phosphorus (BP), for neuromorphic computing applications. The potential of these materials in neuromorphic computing is discussed from the perspectives of material properties, growth methods, and device operation principles. [ABSTRACT FROM AUTHOR]

With the rapid advancement of intelligent electronics, big data platforms, and other cutting-edge technologies, traditional low dielectric polymer matrix composites are no longer sufficient to satisfy the application requirements of high-end electronic information materials, particularly in the realm of high integration and high-frequency, high-speed electronic communication device manufacturing. Consequently, resin-based composites with exceptional low dielectric properties have garnered unprecedented attention. In recent years, benzoxazine-based composites have piqued the interest of scholars in the fields of high-temperature-resistant, low dielectric electronic materials due to their remarkable attributes such as high strength, high modulus, high heat resistance, low curing shrinkage, low thermal expansion coefficient, and excellent flame retardancy. This article focuses on the design and development of modification of polybenzoxazine based on low dielectric polybenzoxazine modification methods. Studies on manufacturing polybenzoxazine co-polymers and benzoxazine-based nanocomposites have also been reviewed. [ABSTRACT FROM AUTHOR]

Doped semiconductor nanowires are emerging as next-generation electronic colloidal materials, and the efficient manipulation of such nanostructures is crucial for technological applications. In fluid suspension, pn nanowires (pn NWs), unlike homogeneous nanowires, have a permanent dipole, and thus, experience a torque under an external DC field that orients the nanowire with its n-type end in the direction of the field. Here, we quantitatively measure the permanent dipoles of various Si nanowire pn diodes and investigate their origin. By comparing the dipoles of pn NWs of different lengths and radii, we show that the permanent dipole originates from non-uniform surface-charge distributions, rather than the internal charges at the p–n junction as was previously proposed. This understanding of the mechanism for pn NWs orientation has relevance to the manipulation, assembly, characterization, and separation of nanowire electronics by electric fields. [ABSTRACT FROM AUTHOR]

Porous materials occupy an important place among the materials of electronic equipment. Nanopores, which are obtained by ion irradiation of materials, have a complex internal structure that depends on the interaction of fast ions with the substance. Obtaining such structures is important, in particular, in the manufacture of biosensor devices based on them. The most effective methods of studying their properties are computer simulations. However, effective computer models of track structures, necessary for the development and improvement of modern biosensors, are not being created actively enough. The approach proposed here involves a detailed study of the interaction of ion flows with the inner surface of the nanotrack. This approach takes into account the structural features of the inner surface of the track as well as the role of adsorption and scattering centers and other local centers. In the existing approaches, the processes mentioned above are mainly described phenomenologically, which does not indicate the ways of modifying the characteristics of the material that is necessary for the device improvement. [ABSTRACT FROM AUTHOR]

With the development of wireless sensor networks, electrical waste that remains in the environment is an inevitable issue in achieving sustainability and progress in electronics. Transient electronics that disappear after a prescribed time are of interest in electronics and material sciences. Such devices comprise naturally sourced materials that degrade without harmful or toxic substances during biodegradation. Although there are reports on transient electronic devices, including transistors, sensors, and radio frequency circuits, insufficient research has been conducted on the energy storage essential for operating transient devices. This review highlights the recent progress in developing transient energy storage. First, materials for transient energy storage, including conductors, electrolytes, and gels, are introduced. Second, transient supercapacitors, pseudocapacitors, primary batteries, and secondary batteries, are described and summarized. Finally, this review concludes and discusses the prospect of transient energy storage. The continuous progress of transient batteries and integration with transient devices are promising for sustainable electronics in the future. [ABSTRACT FROM AUTHOR]

In this paper, we analyze the residual stress of different components of the crystal structures of electronic device materials following exposure to elevated temperatures using a combination of experimental tests and finite element simulations. X-ray diffraction (XRD) and LXRD micro-area residual stress analyzer were employed to determine the residual strain and stress of the CBGA sample encapsulation cover and solder joints. Subsequently, the experimental data were utilized to verify the accuracy of the simulation. The discrepancy between experimental measurements and simulation outcomes of the residual stress following reflow soldering of CBGA-assembled micro-solder joints is below 14%. The analysis also included thermal warping deformation of the CBGA encapsulation cover and how the residual stress was influenced by the diameter, spacing, and height of the solder joints. The study reveals that the residual stress following reflow soldering of BGA solder joints is non-uniformly distributed within the array. Within a single solder joint, residual stress gradually increases in distribution from its middle to the point where it make contact with the PCB and chip, with the highest level of residual stress observed where the solder joint contacts the chip. The variation in material parameters, such as the coefficient of thermal expansion, is the primary cause of thermal warping deformation on the surface of CBGA encapsulation covers. Three primary factors significantly impact the residual stress on BGA solder joints: solder joint diameter, spacing, and height. The maximum value is inversely proportional to the height of the solder joints and the residual stress. Conversely, the diameter and spacing of the joints are positively proportional to the highest value. When the diameter of the solder joint is increased from 0.55 mm to 0.75 mm, the maximum residual stress in the BGA solder joint increases from 37.243 MPa to 36.835 MPa. Conversely, increasing the height of the solder joint from 0.36 mm to 0.44 mm reduces the stress from 39.776 MPa to 36.835 MPa. [ABSTRACT FROM AUTHOR]

High entropy oxides (HEO) are single-phase solid solutions which are formed by the incorporation of five or more elements into a cationic sublattice in equal or near-equal atomic proportions. Its unique structural features and the possibility of targeted access to certain functions have attracted great interest from researchers. In this review, we summarize the recent advances in the electronic field of high-entropy oxides. We emphasize the following three fundamental aspects of high-entropy oxides: (1) The conductivity mechanism of metal oxides; (2) the factors affecting the formation of single-phase oxides; and (3) the electrical properties and applications of high-entropy oxides. The purpose of this review is to provide new directions for designing and tailoring the functional properties of relevant electronic materials via a comprehensive overview of the literature on the field of high-entropy oxide electrical properties. [ABSTRACT FROM AUTHOR]

Organic semiconductors with distinct molecular properties and large carrier mobilities are constantly developed in attempt to produce highly‐efficient electronic materials. Recently, designer molecules with unique structural modifications have been expressly developed to suppress molecular motions in the solid state that arise from low‐energy phonon modes, which uniquely limit carrier mobilities through electron–phonon coupling. However, such low‐frequency vibrational dynamics often involve complex molecular dynamics, making comprehension of the underlying electronic origins of electron–phonon coupling difficult. In this study, first a mode‐resolved picture of electron–phonon coupling in a series of materials that are specifically designed to suppress detrimental vibrational effects, is generated. From this foundation, a method is developed based on the crystalline orbital Hamiltonian population (COHP) analyses to resolve the origins—down to the single atomic‐orbital scale—of surprisingly large electron–phonon coupling constants of particular vibrations, explicitly detailing the manner in which the intermolecular wavefunction overlap is perturbed. Overall, this approach provides a comprehensive explanation into the unexpected effects of less‐commonly studied molecular vibrations, revealing new aspects of molecular design that should be considered for creating improved organic semiconducting materials. [ABSTRACT FROM AUTHOR]

Lightweight and flexible electronic materials with high energy attenuation hold an unassailable position in electromagnetic stealth and intelligent devices. Among them, emerging heterodimensional structure draws intensive attention in the frontiers of materials, chemistry, and electronics, owing to the unique electronic, magnetic, thermal, and optical properties. Herein, an intrinsic heterodimensional structure consisting of alternating assembly of 0D magnetic clusters and 2D conductive layers is developed, and its macroscopic electromagnetic properties are flexibly designed by customizing the number of oxidative molecular layer deposition (oMLD) cycles. This unique heterodimensional structure features highly ordered spatial distribution, with an achievement of electron‐dipole and magnetic–dielectric double synergies, which exhibits the high attenuation of electromagnetic energy (160) and substantial improvement of dielectric loss tangent (≈200%). It can respond to electromagnetic waves of different bands to achieve multispectral stealth, covering visible light, infrared radiation, and gigahertz wave. Importantly, two kinds of ingenious information interaction devices are constructed with heterodimensional structure. The hierarchical antennas allow precise targeting of operating bands (S‐ to Ku‐ bands) by oMLD cycles. The strain imaging device with high sensitivity opens a new horizon for visual interaction. This work provides a creative insight for developing advanced micro–nano materials and intelligent devices. [ABSTRACT FROM AUTHOR]

Metamaterials are artificially engineered materials that exhibit naturally unavailable properties like negative electric permittivity and magnetic permeability. The key role lies in the advancement of meta-devices according to engineered micro-architectures. This review encompasses the characteristics of meta-materials in the progress of devices like implantable antennas in Medical Implant Communication System (MICS) with the range of 401–406 MHz (where the core band range is of the order of 402–405 MHz communication link of the network, wearable tunable, with sensing functionalities to the body worn biosensors. It also suggests the knowledge of targeted patients' inclination towards implantables rather wearables, and relevant surveys captured on wearable devices. [ABSTRACT FROM AUTHOR]

In this study, viologen-tetrasubstituted Zn(II) phthalocyanines (PcV1 and PcV2) were designed and synthesized to achieve the tunable optical features via redox-active viologen groups. Several parameters relevant to the evaluation of the tunable optical features have been investigated: UV-Vis, cyclic voltammetry (CV), EPR, square wave voltammetry (SWV), and theoretical analyses. The results showed that upon reductions and oxidations of viologen groups either chemically or electrochemically, the optical features of PcV1 and PcV2 change drastically with switchable processes. These outcomes indicate that achieving control over optical features of large organic chromophores such as Pc with our rational design can be used for the design of new complex organic electronic materials. [ABSTRACT FROM AUTHOR]

Thieno[3,2-b]thiophene (TT) has been attracting significant attention in the field of organic electronics and optoelectronics. In this study, a useful building block of TT derivative 4-thieno[3,2-b]thiophen-3-ylbenzonitrile (4-CNPhTT), developed by our group and possessing a strong electron-withdrawing 4-CNPh moiety, is reviewed as it has been the source of the development of various organic electronic materials. Some optic and electronic properties are discussed based on electrochemical polymerization of 4-CNPhTT performed using cyclic voltammetry, and spectroelectrochemical measurements are conducted to investigate the optical variations of the polymer film upon doping. Moreover, 4-CNPhTT is clarified by scanning electron microscopy at different magnitudes ranging from 100 to 500 μm, supported by the single X-ray crystal structure. The thermal properties of 4-CNPhTT are investigated by thermal gravimetric and differential thermal analyses. All of the observed properties demonstrate that 4-CNPhTT has the potential of shedding light on the development of new materials for electronic and optoelectronic applications within the TT family. [ABSTRACT FROM AUTHOR]

Objectives: The aim of this study was to assess the following PIO question: In adult patients treated with an indication for single tooth extraction in the maxillary esthetic zone (15–25), what is the influence of an immediate implant placement and immediate loading protocol on the clinical performance (primary aim) and esthetic outcomes (secondary aim) focusing on investigations published after 2010. Material and Methods: An electronic search in Medline (PubMed), the Cochrane Central Register of Controlled Trials, and EMBASE databases up to April 2022 was performed to identify clinical studies investigating the outcome of single implants subjected to immediate placement with immediate restoration/loading (Type 1A). Results: Sixty‐three studies (10 randomized controlled trials, 28 prospective and 25 retrospective cohort studies) were included with a follow‐up ranging from 12 to 96 months. One thousand nine hundred sixty‐one implants reported survival rates of 99.2 (98.6–99.5) % at 1 year, 97.5 (95.9–98.4) % after 3 years, and 95.8 (93.3–97.4) % after 5 years; 1064 immediately loaded restorations presented survival rates of 98.9 (97.8–99.5) % after 1 year, 96.8 (93.6–98.4) % after 2 years, and 94.8 (89.6–97.4) % after 5 years. Comparing baseline to 12‐month data using the Hedges' g effect size (95% CI), papilla height presented an overall effect size of −0.71 (−1.25, −0.1) mm, midfacial recession change of −0.15 (−0.66, 0.36) mm, and a 0.82 (0.37, 1.28) gain in PES. Conclusions: Immediate implant placement and immediate loading can be considered a predictable and safe treatment option for single maxillary anterior restorations with adequate survival rates and favorable esthetics outcomes for up to 5 years. [ABSTRACT FROM AUTHOR]

Objectives: For the present review, the following focused question was addressed: In patients with root‐analog dental implants, what is the effect of implants made of other materials than titanium (alloy) on implant survival, marginal bone loss (MBL), and technical and biological complications after at least 5 years. Materials and Methods: An electronic (Medline, Embase, Web of Science) search was performed to identify observational clinical studies published from January 2000 investigating a minimum of 20 commercially available zirconia implants with a mean follow‐up of at least 60 months. Primary outcome was implant survival, secondary outcomes included peri‐implant MBL, probing depths (PDs), and technical and biological complications. Meta‐analyses were performed to evaluate implant survival, MBL, and PD. Results: From 5129 titles, 580 abstracts were selected, and 111 full‐text articles were screened. Finally, 4 prospective and 2 retrospective observational clinical cohort studies were included for data extraction. Meta‐analyses estimated after 5 years of loading mean values of 97.2% (95% CI 94.7–99.1) for survival (277 implants, 221 patients), 1.1 mm (95% CI: 0.9–1.3) for MBL (229 implants, 173 patients), and 3.0 mm (95% CI 2.5–3.4) for PDs (231 implants, 175 patients). Conclusions: After 5 years, commercially available zirconia implants showed reliable clinical performance based on survival rates, MBL, and PD values. However, more well‐designed prospective clinical studies and randomized clinical trials investigating titanium and zirconia implants are needed to confirm the presently evaluated promising outcomes. [ABSTRACT FROM AUTHOR]