201. Photodetection Enhancement of PdSe2/ReSe2 Van der Waals Heterostructure Field‐Effect Transistors: A Density Functional Theory‐Guided Approach.
- Author
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Riaz, Muhammad, Jaffery, Syed Hassan Abbas, Abbas, Zeesham, Hussain, Muhammad, Suleman, Muhammad, Hussain, Sajjad, Aftab, Sikandar, Seo, Yongho, and Jung, Jongwan
- Subjects
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FIELD-effect transistors , *DENSITY functional theory , *QUANTUM efficiency , *HETEROJUNCTIONS , *HETEROSTRUCTURES - Abstract
The fabrication of van der Waals heterostructures (vdWHs) has drawn considerable interest because of their wide range of functionalities. Herein, a novel PdSe2/ReSe2 vdWHs with gate‐tunable rectification behavior and excellent broadband photodetection characteristics is presented. The application of the gate bias substantially enhances the rectification behavior, with the highest rectification ratio (≈3.13 × 103) observed at gate voltage Vg = −60 V. The density functional theory calculations demonstrate the direct and indirect bandgap behavior of PdSe2 and ReSe2 in the monolayer structure, respectively. Additionally, the PdSe2/ReSe2 heterojunction displays a strong photo‐response in the near‐infrared region and achieves a high photoresponsivity, an excellent external quantum efficiency, and rapid rise and decay times of 1.7 × 103 A W−1, 4.05 × 103, and 5 and 20 ms, respectively. Furthermore, the device exhibits a remarkable detectivity of ≈3.5 × 1012 Jones. The findings hold great potential for advancing the fabrication of multifunctional vdW heterostructure devices. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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