201. Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO
- Author
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Shunsuke Fukami, Ayato Ohkawara, Hideo Sato, Chaoliang Zhang, Samik DuttaGupta, Fumihiro Matsukura, Hideo Ohno, and Kyota Watanabe
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Heterojunction ,02 engineering and technology ,Sputter deposition ,021001 nanoscience & nanotechnology ,01 natural sciences ,Condensed Matter::Materials Science ,Magnetic anisotropy ,Magnetization ,Nuclear magnetic resonance ,Sputtering ,Electrical resistivity and conductivity ,0103 physical sciences ,Spin Hall effect ,0210 nano-technology ,Anisotropy - Abstract
We study the spin-orbit torque induced magnetization switching in W/CoFeB/MgO heterostructures with W deposited under different sputtering conditions. We show that the crystal structure and resistivity of W depend on the employed sputtering conditions. Switching current of nanoscale devices is smaller while effective anisotropy field is larger for the devices with more resistive W channel deposited at lower sputtering power and higher Ar gas pressure. The effective spin Hall angle evaluated from the switching probability varies by a factor of 2–3 depending on the W resistivity controlled by the sputtering conditions.
- Published
- 2016
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