1,104 results on '"Kohn, E"'
Search Results
202. Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
203. Concept for diamond 3-D integrated UV sensor
204. Yield-improving test and routing circuits for a novel 3-D interconnect technology
205. N-type doped nano-diamond in a first MEMS application
206. Scaling aspects of microjoints for 3D chip interconnects
207. Increased efficacy and toxicity with combination anti-VEGF therapy using sorafenib and bevacizumab
208. Piezoelectric GaN sensor structures
209. Bi-stable micro actuator based on stress engineered nano-diamond
210. Progress in ovarian cancer research: Proceedings of the 5th Biennial Ovarian Cancer Research Symposium
211. A new diamond based heterostructure diode
212. Nanocrystalline diamond pn-structure grown by Hot-Filament CVD
213. Small-signal characteristics of AlInN/GaN HEMTs
214. A diamond-on-silicon patch-clamp-system
215. Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon
216. A phase II study of BAY 43–9006 in patients with androgen-independent prostate cancer (AIPC) with proteomic profiling
217. 3D Chip Stack Technology Using Through-Chip Interconnects
218. Eine Test- und Ansteuerschaltung für eine neuartige 3D Verbindungstechnologie
219. High-current AlInN/GaN field effect transistors
220. Surface channel MESFETs on nanocrystalline diamond
221. Diamond power devices. Concepts and limits
222. An “all-diamond” inkjet realized in sacrificial layer technology
223. Ultra-nano-crystalline/single crystal diamond heterostructure diode
224. UNSTRAINED InAlN/GaN HEMT STRUCTURE
225. Diamond for high power electronics
226. "all-diamond-inkjet" for dispension of aggressive liquids
227. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
228. UNSTRAINED InAlN/GaN HEMT STRUCTURE
229. Nanocrystalline diamond films for mechanical applications
230. A phase II clinical trial with proteomic profiling of imatinib mesylate in patients with refractory or relapsed epithelial ovarian cancer (EOC)
231. P-Channel InGaN-HFET Structure Based on Polarization Doping
232. High-resolution serum proteomic features for ovarian cancer detection.
233. Microwave performance evaluation of diamond surface channel FETs
234. Electronic surface barrier characteristics of H-terminated and surface conductive diamond
235. Elements for surface microfluidics in diamond
236. Application of CVD-diamond for catheter ablation in the heart
237. Symposium L: carbon materials for active electronics
238. Diamond-based electronics for RF applications
239. Proteomic analysis for early detection of ovarian cancer: A realistic approach?
240. Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers
241. Gallium‐nitride‐based devices on silicon
242. Influence of polarization on the properties of GaN based FET structures
243. Microwave power capabilities of InAlN/GaN HEMTs.
244. Mercury Di-β-Naphthyl
245. Field effect transistor fabricated on hydrogen-terminated diamond grown on SrTiO3 substrate and iridium buffer layer
246. Diamond field effect transistors—concepts and challenges
247. Effect of surface quality on ion sensitivity of H-terminated diamond
248. Diamond switch using new thermal actuation principle
249. Bias enhanced nucleation of diamond on silicon (100) in a HFCVD system
250. Diamond diodes and transistors
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.