201. MOCVD growth of (010) β-(AlxGa1−x)2O3thin films
- Author
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Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Meng, Lingyu, and Zhao, Hongping
- Abstract
Abstract: In this work, we systematically investigate the effects of growth parameters on the structural and surface morphological properties of β-(Al
x Ga1−x )2 O3 thin films grown on (010) β-Ga2 O3 substrates via metalorganic chemical vapor deposition (MOCVD). By varying [TMAl]/[TEGa + TMAl] molar flow rate ratio, growth temperature and chamber pressure, (i) the structural and physical properties of β-(Alx Ga1−x )2 O3 films including Al incorporations, growth rates, strain properties, rocking curve full width at half maximum, and (ii) the surface morphological properties are investigated. Higher [TMAl]/[TEGa + TMAl] molar flow ratio leads to higher Al incorporation in β-(Alx Ga1−x )2 O3 films. Higher growth temperature promotes lower growth rates with substantial surface roughening, although the Al incorporation remains similar for a given [TMAl]/[TEGa + TMAl] molar flow ratio. In addition, increasing chamber pressure leads to lower growth rates and lower Al incorporation in the AlGaO films. This study reveals that the MOCVD growth window for (010) β-(Alx Ga1−x )2 O3 films becomes narrower as the Al composition increases. Graphic abstract:- Published
- 2021
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