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We have studied the $\nu=5/2$ fractional quantum Hall state in a density-tunable sample at extremely low electron densities. For the densities accessed in our experiment, the Landau level mixing parameter $\kappa$ spans the $2.52<\kappa<2.82$ range. In the vicinity of $5.8 \times 10^{10}$~cm$^{-2}$ or $\kappa = 2.6$ an anomalously large change in the density dependence of the energy gap is observed. Possible origins of such an anomaly are discussed, including a topological phase transition in the $\nu=5/2$ fractional quantum Hall state.

We show that the resistance of the v=5/2 quantum Hall state, confined to an interferometer, oscillates with magnetic field consistent with an Ising-type non-Abelian state. In three quantum Hall interferometers of different sizes, resistance oscillations at v=7/3 and integer filling factors have the magnetic field period expected if the number of quasiparticles contained within the interferometer changes so as to keep the area and the total charge within the interferometer constant. Under these conditions, an Abelian state such as the (3,3,1) state would show oscillations with the same period as at an integer quantum Hall state. However, in an Ising-type non-Abelian state there would be a rapid oscillation associated with the "even-odd effect" and a slower one associated with the accumulated Abelian phase due to both the Aharonov-Bohm effect and the Abelian part of the quasiparticle braiding statistics. Our measurements at v=5/2 are consistent with the latter., Comment: 10 pages, 8 figures, includes Supplemental Materials

Design of a Fabry-Perot (double point contact) interferometer to measure fractional quantum Hall effect quasiparticle charge properties, and in particular the 5/2 excitations, poses an important trade-off: the device size should be minimized to allow two path interference, since the coherence length of the quasiparticles in the correlated states are expected be limited, yet a small device promotes the dominance of Coulomb charging effects which would overwhelm the Aharonov-Bohm interference effect. In this study a series of small but different size interferometers from the same high density heterostructure wafer are examined for the presence of Coulomb effects versus Aharonov-Bohm (A-B) interference effect when operated in gate configurations that support the 5/2, 7/3, and 8/3 fractional quantum Hall effects. The device sizes vary by more than a factor of three, and over this range explicitly show specific properties of A-B interference, but not Coulomb dominated effects. Given these A-B interference results, the coherence length of the charge e/4 interference is extracted. The coherence length of non-Abelian e/4 quasiparticles is an important parameter for design and development of complex interference devices used to study and apply this exotic excitation. As in prior observations of e/4 excitations, A-B e/4 and e/2 oscillations in alternation are observed in these multiple devices. The amplitudes of the e/4 oscillations are observed to be dramatically reduced for larger area interferometers. Path-length limits are derived from interferometer areas determined directly by A-B measurements, and the attenuation lengths of the e/4 oscillations are shown to be micron to sub-micron scale. This coherence length is consistent with that of the 7/3 excitations measured here, and consistent with theoretical models., Comment: 31 pages, 14 figures. arXiv admin note: text overlap with arXiv:1204.1993

We have studied the effect of an in-plane magnetic field on microwave-induced resistance oscillations in a high mobility two-dimensional electron system. We have found that the oscillation amplitude decays exponentially with an in-plane component of the magnetic field $B_\parallel$. While these findings cannot be accounted for by existing theories, our analysis suggests that the decay can be explained by a $B_\parallel$-induced correction to the quantum scattering rate, which is quadratic in $B_\parallel$.

Detailed measurements of the longitudinal thermopower of two-dimensional electrons in the first excited Landau level are reported. Clear signatures of numerous fractional quantized Hall states, including those at $\nu = 5/2$ and 7/3, are observed in the magnetic field and temperature dependence of the thermopower. An abrupt collapse of the thermopower is observed below about $T= 40$ mK at those filling factors where re-entrant insulating electronic states have been observed in conventional resistive transport studies. The thermopower observed at $\nu = 5/2$ is discussed in the context of recent theories which incorporate non-abelian quasiparticle exchange statistics., Comment: 5 pages, 5 figures

We report a severe, spin-dependent, Fermi contour anisotropy induced by parallel magnetic field in a high-mobility (001) GaAs two-dimensional hole system. Employing commensurability oscillations created by a unidirectional, surface-strain-induced, periodic potential modulation, we directly probe the anisotropy of the two spin subband Fermi contours. Their areas are obtained from the Fourier transform of the Shubnikov-de Haas oscillations. Our findings are in semi-quantitative agreement with the results of parameter-free calculations of the energy bands., Comment: 4 pages, 4 figures

Bilayer quantum Hall systems at \nu =1 support an excitonic ground state. In addition to the usual charged quasiparticles, this system possesses a condensate degree of freedom: exciton transport. Detection of this neutral transport mode is facilitated by the use of the Corbino multiply-connected geometry in which charge transport is suppressed. We here summarize our recent experiments on Corbino devices which directly demonstrate exciton transport across the bulk of the incompressible \nu =1 quantum Hall state., Comment: 5 pages, 2 figures. Contribution to the Proceedings of the 20th International Conference on High Magnetic Fields in Semiconductor Physics, Chamonix, 2012

We have studied magnetotransport properties of a high-mobility two-dimensional electron system subject to weak electric fields. At low magnetic field $B$, the differential resistivity acquires a correction $\delta r \propto -\lambda^2 j^2/B^2$, where $\lambda$ is the Dingle factor and $j$ is the current density, in agreement with theoretical predictions. At higher magnetic fields, however, $\delta r$ becomes $B$-independent, $\delta r \propto -j^2$. While the observed change in behavior can be attributed to a crossover from overlapping to separated Landau levels, full understanding of this behavior remains a subject of future theories., Comment: 5 pages, 5 figures

We report the observation of commensurability oscillations of hole-flux composite fermions near filling factor $\nu=1/2$ in a high-mobility two-dimensional hole system confined to a GaAs quantum well, and subjected to a weak, strain-induced, unidirectional periodic potential modulation. The oscillations, which are consistent with ballistic transport of fully spin-polarized composite fermions in a weak periodic effective magnetic field, are surprisingly strong and exhibit up to third-order minima. We extract a ballistic mean-free-path of about 0.2 $\mu$m for the hole-flux composite fermions., Comment: 5 pages, 3 figures

We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes., Comment: 5 pages, 4 figures

Measurements in clean two-dimensional electron systems confined to wide GaAs quantum wells in which two electric subbands are occupied reveal an unexpected rotation of the orientation of the stripe phase observed at a half-filled Landau level. Remarkably, the reorientation is sensitive to the spin of the half-filled Landau level and the symmetry of the charge distribution in the quantum well.

We report on quantum magneto-oscillations in an ultra-high mobility GaAs/AlGaAs quantum well at very high tilt angles. Unlike previous studies, we find that the spin and cyclotron splittings become equal over a continuous range of angles, but only near certain, angle-dependent filling factors. At high enough tilt angles, Shubnikov-de Haas oscillations reveal a prominent beating pattern, indicative of consecutive level crossings, all occurring at the same angle. We explain these unusual observations by an in-plane field-induced increase of the carrier mass, which leads to accelerated, filling factor-driven crossings of spin sublevels in tilted magnetic fields.

Transport experiments provide conflicting evidence on the possible existence of fractional order within integer quantum Hall systems. In fact integer edge states sometimes behave as monolithic objects with no inner structure, while other experiments clearly highlight the role of fractional substructures. Recently developed low-temperature scanning probe techniques offer today an opportunity for a deeper-than-ever investigation of spatial features of such edge systems. Here we use scanning gate microscopy and demonstrate that fractional features were unambiguously observed in every integer quantum Hall constriction studied. We present also an experimental estimate of the width of the fractional incompressible stripes corresponding to filling factors 1/3, 2/5, 3/5, and 2/3. Our results compare well with predictions of the edge-reconstruction theory.

The integer and fractional quantum Hall states are known to break down at high dc bias, exhibiting deviation from the ideal incompressible behavior. We measure breakdown of the \nu = 2, 3, 4, 5 integer and the \nu = 4/3 and 5/3 fractional states in a quantum point contact (QPC) of lithographic width ~600 nm. Dependence of the critical current on magnetic field, QPC gate voltage, and QPC width are presented. Of particular interest, the critical current of the 4/3 and 5/3 fractional states shows the opposite dependence on QPC width compared to the integer states. This previously unobserved result is not explained by current theories of breakdown.

The low-lying neutral excitation spectrum of the incompressible quantum Hall fluid at $\nu=5/2$ is investigated by inelastic light scattering. Gapped modes are observable only in a very narrow filling factor range centered at 5/2 at energies that overlap estimates from transport activation gaps. The modes are interpreted as critical points in the wave-vector dispersion of excitations that preserve spin orientation. For very small changes $|\delta\nu|\lesssim 0.01$ the gapped modes disappear and a continuum of low-lying excitations takes over indicating the transition from an incompressible fluid at 5/2 to a compressible state. Observations of spin wave modes indicate spin polarization of the 5/2 and 2+1/3 quantum Hall fluids., Comment: 4 pages, 3 figures

Non-Abelian e/4 quasiparticles at 5/2 filling factor in a correlated two-dimensional electron gas have a proposed specific property in an interference measurement of their edge propagation: encircling an even number of localized e/4 quasiparticles allows expression of e/4 Aharonov-Bohm (A-B) oscillations, but suppression of these oscillations will occur with an odd number encircled. This picture is tested explicitly here in multiple interferometers of different areas. The encircled localized e/4 quasiparticle number near 5/2 filling factor is changed by sweeping B-field, and oscillations are observed in resistance near 5/2 of period specific to that device area for each interferometer. The product of the measured interferometric area of each device and the respective 5/2 resistance oscillation period is found to agree with the expected flux quanta addition needed for parity change in the localized e/4 number. This result shows a highly specific non-Abelian property of the quasiparticle excitations at 5/2 filling expressed in multiple interferometers., Comment: 18 pages, 5 figures

We have carried out tilt magnetic field (B) studies of the \nu=12/5 fractional quantum Hall state in an ultra-high quality GaAs quantum well specimen. Its diagonal magneto-resistance Rxx shows a non-monotonic dependence on tilt angle (\theta). It first increases sharply with increasing \theta, reaches a maximal value of ~ 70 ohms at \theta ~ 14^o, and then decreases at higher tilt angles. Correlated with this dependence of Rxx on \theta, the 12/5 activation energy (\Delta_{12/5}) also shows a non-monotonic tilt dependence. \Delta_{12/5} first decreases with increasing \theta. Around \theta = 14^{o}, \Delta_{12/5} disappears as Rxx becomes non-activated. With further increasing tilt angles, \Delta_{12/5} reemerges and increases with \theta. This tilt B dependence at \nu=12/5 is strikingly different from that of the well-documented 5/2 state and calls for more investigations on the nature of its ground state.

We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings \nu=8/3 and 7/3 in a series of high quality quantum wells. In the density range from 0.5 x 10^{11} to 3 x 10^{11} cm^{-2}, the 7/3 energy gap increases monotonically with increasing density, supporting its ground state being spin polarized. For the 8/3 state, however, its energy gap first decreases with increasing density, almost vanishes at n ~ 0.8 x 10^{11} cm^{-2}, and then turns around and increases with increasing density, clearly demonstrating a spin transition., Comment: Accepted for publication in Phys. Rev. Lett

Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $\nu = 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B \sim$ 1.7 T and determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5/2 resistance minimum and the Hall plateau are found to strengthen continuously under an increasing tilt angle $0 < \theta < 25^\circ$ (corresponding to an in-plane magnetic field 0 $<$ $B_\parallel$ $< 0.8$ T). In the same range of $\theta$ the activation gaps of both the 7/3 and the 8/3 states are found to increase with tilt. The 5/2 state transforms into a compressible Fermi liquid upon tilt angle $\theta > 60^\circ$, and the composite fermion series [2+$p/(2p\pm1)$], $p =$ 1, 2 can be identified. Based on our results, we discuss the relevance of a Skyrmion spin texture at $\nu = 5/2$ associated with small Zeeman energy in wide quantum wells, as proposed by W$\acute{\text o}$js $et$ $al$., Phys. Rev. Lett. 104, 086801 (2010)., Comment: 5+ pages, 3 figures, accepted for by Phy. Rev. Lett

Coulomb drag is a process whereby the repulsive interactions between electrons in spatially separated conductors enable a current flowing in one of the conductors to induce a voltage drop in the other. If the second conductor is part of a closed circuit, a net current will flow in that circuit. The drag current is typically much smaller than the drive current owing to the heavy screening of the Coulomb interaction. There are, however, rare situations in which strong electronic correlations exist between the two conductors. For example, bilayer two-dimensional electron systems can support an exciton condensate consisting of electrons in one layer tightly bound to holes in the other. One thus expects "perfect" drag; a transport current of electrons driven through one layer is accompanied by an equal one of holes in the other. (The electrical currents are therefore opposite in sign.) Here we demonstrate just this effect, taking care to ensure that the electron-hole pairs dominate the transport and that tunneling of charge between the layers is negligible., Comment: 12 pages, 4 figures

We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$ K. Unlike the zero-field resistivity which saturates at $T \simeq 2 $ K, the resistivity at this minimum continues to drop at an accelerated rate to much lower temperatures and becomes several times smaller than the zero-field resistivity. Unexpectedly, we also find that the effect is destroyed not only by increasing temperature but also by modest in-plane magnetic fields. The analysis shows that giant negative magnetoresistance cannot be explained by existing theories considering interaction-induced or disorder-induced corrections.

Some models of the 5/2 fractional quantum Hall state predict that the quasi-particles, which carry the charge, have non-Abelian statistics: exchange of two quasi-particles changes the wave function more dramatically than just the usual change of phase factor. Such non-Abelian statistics would make the system less sensitive to decoherence, making it a candidate for implementation of topological quantum computation. We measure quasi-particle tunneling as a function of temperature and DC bias between counter-propagating edge states. Fits to theory give e*, the quasi-particle effective charge, close to the expected value of e/4 and g, the strength of the interaction between quasi-particles, close to 3/8. Fits corresponding to the various proposed wave functions, along with qualitative features of the data, strongly favor the Abelian 331 state.

We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor {\nu} = 2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at {\nu} = 2/3 a tunneling charge of (2/3)e and a single charged edge., Comment: related papers at http://marcuslab.harvard.edu

We report on experimental studies of magnetoresistance oscillations that originate from the resonant interaction of two-dimensional electrons with thermal transverse-acoustic phonons in very high-mobility GaAs/AlGaAs quantum wells. We find that the oscillation maxima consistently occur when a frequency of a phonon with twice the Fermi momentum exceeds an integer multiple of the cyclotron frequency. This observation is in contrast to to all previous experiments associating resistance maxima with magnetophonon resonance and its harmonics. Our experimentally obtained resonant condition is in excellent quantitative agreement with recent theoretical proposals.

Theories of microwave-induced resistance oscillations in high-mobility two-dimensional electron gas predict that with decreasing oscillation order $n$ or with increasing frequency $\omega$ the photoresistance maxima should appear closer to the cyclotron resonance harmonics due to increased Landau level separation. In this experimental study we demonstrate that while for a given $\omega$ the peaks do move towards the harmonics with decreasing $n$, there is no corresponding movement with increasing $\omega$ for a given $n$. These findings show that the positions of the photoresistance maxima cannot be directly linked to the Landau level separation challenging our current understanding of the phenomenon.

We report on experimental and theoretical studies of microwave-induced resistance oscillations in a two-dimensional electron gas over a wide range of microwave intensities. We observe a distinct crossover from linear to sublinear power dependence of the oscillation amplitude and a concomitant narrowing of the oscillation extrema. To explain our observations we propose a theory based on the quantum kinetic equation at arbitrary microwave power. Taken together, these findings demonstrate a crucial role of multiphoton processes at elevated microwave intensities.

In this paper, we report on the study of Abelian and non-Abelian statistics through Fabry-Perot interferometry of fractional quantum Hall (FQH) systems. Our detection of phase slips in quantum interference experiments demonstrates a powerful, new way of detecting braiding of anyons. We confirm the Abelian anyonic braiding statistics in the $\nu = 7/3$ FQH state through detection of the predicted statistical phase angle of $2\pi/3$, consistent with a change of the anyonic particle number by one. The $\nu = 5/2$ FQH state is theoretically believed to harbor non-Abelian anyons which are Majorana, meaning that each pair of quasiparticles contain a neutral fermion orbital which can be occupied or unoccupied and hence can act as a qubit. In this case our observed statistical phase slips agree with a theoretical model where the Majoranas are strongly coupled to each other, and strongly coupled to the edge modes of the interferometer. In particular, an observed phase slip of approximately $\pi$ is interpreted as a sudden flip of a qubit, or entry of a neutral fermion into the interferometer. Our results provide compelling support for the existence of non-Abelian anyons., Comment: 15 pages with supplemental information

Resistance oscillations in electronic Fabry-Perot interferometers near fractional quantum Hall (FQH) filling factors 1/3, 2/3, 4/3 and 5/3 in the constrictions are compared to corresponding oscillations near integer quantum Hall (IQH) filling factors in the constrictions, appearing in the same devices and at the same gate voltages. Two-dimensional plots of resistance versus gate voltage and magnetic field indicate that all oscillations are Coulomb dominated. Applying a Coulomb charging model yields an effective tunneling charge e* \approx e/3 for all FQH constrictions and e* \approx e for IQH constrictions. Surprisingly, we find a common characteristic temperature for FQH oscillations and a different common characteristic temperature for IQH oscillations.

Measurements in very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal reentrant $\nu=1$ integer quantum Hall states in the lowest Landau level near filling factors $\nu=4/5$ and 6/5. These states are not seen at low densities and become more prominent with increasing density and in wider wells. Our data suggest a close competition between different types of Wigner crystal states near these fillings. We also observe an intriguing disappearance and reemergence of the $\nu=4/5$ fractional quantum Hall effect with increasing density.

We report a highly unusual temperature dependence in the magnetoresistance of a weakly interacting high mobility 2D electron gas (2DEG) under a parallel magnetic field and when the current is perpendicular to the field. While the linear temperature dependence below 10 K and the exponential temperature dependence above 40 K agree with existing theory of electron-phonon scattering, a field induced resistivity saturation behaviour characterized by an almost complete suppression of the temperature dependence is observed from approximately 20 to 40 K, which is in sharp contrast to the phenomenology observed when the current is parallel to the field. Possible origins of this intriguing intermediate temperature phenomenon are discussed., Comment: 5 pages, 3 figures

We report an unexpected sharp peak in the temperature dependence of the magnetoresistance of the reentrant integer quantum Hall states in the second Landau level. This peak defines the onset temperature of these states. We find that in different spin branches the onset temperatures of the reentrant states scale with the Coulomb energy. This scaling provides direct evidence that Coulomb interactions play an important role in the formation of these reentrant states evincing their collective nature.

We compare the energy gap of the \nu=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder., Comment: PRL 106, 206806 (2011)

We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p

We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the nu = 1 quantum Hall state in the presence of a parallel magnetic field component B||, followed by a strengthening and reemergence as B|| is further increased. The robustness of the nu = 1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B|| needed to invoke the transition increases with the total density of the system.

We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $\nu=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt-angle, or symmetry of the charge distribution. When the charge distribution is strongly asymmetric, there is a remarkable persistence of a resistance minimum near $\nu=7/2$ when two Landau levels belonging to the two subbands cross at the Fermi energy. The field position of this minimum tracks the 5/2 filling of the symmetric subband, suggesting a pinning of the crossing levels and a developing 5/2 FQHS in the symmetric subband even when the antisymmetric level is partially filled.

We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the $\nu=5/2$ fractional quantum Hall state. Futhermore, we quantify, for the first time, the dependence of the intrinsic gap at $\nu=5/2$ on Landau level mixing., Comment: PRB 84, R121305 (2011)

We find unexpected low energy excitations of fully spin-polarized composite-fermion ferromagnets in the fractional quantum Hall liquid, resulting from a complex interplay between a topological order manifesting through new energy levels and a magnetic order due to spin polarization. The lowest energy modes, which involve spin reversal, are remarkable in displaying unconventional negative dispersion at small momenta followed by a deep roton minimum at larger momenta. This behavior results from a nontrivial mixing of spin-wave and spin-flip modes creating a spin-flip excitonic state of composite-fermion particle-hole pairs. The striking properties of spin-flip excitons imply highly tunable mode couplings that enable fine control of topological states of itinerant two-dimensional ferromagnets., Comment: 4 pages, 4 figures

Electrons in artificial lattices enable explorations of the impact of repulsive Coulomb interactions in a tunable system. We have trapped two-dimensional electrons belonging to a gallium arsenide quantum well in a nanofabricated lattice with honeycomb geometry. We probe the excitation spectrum in a magnetic field identifying novel collective modes that emerge from the Coulomb interaction in the artificial lattice as predicted by the Mott-Hubbard model. These observations allow us to determine the Hubbard gap and suggest the existence of a novel Coulomb-driven ground state. This approach offers new venues for the study of quantum phenomena in a controllable solid-state system., Comment: 10 pages, 10 figures

We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $\nu = $ 5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy ($E_F$) lies in the excited-state LL of the symmetric subband, the 5/2 quantum Hall state is surprisingly stable and gets even stronger near this crossing, and then suddenly disappears and turns into a metallic state once $E_F$ moves to the ground-state LL of the antisymmetric subband. The sharpness of this disappearance suggests a first-order transition.

We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured. This is the highest mobility reported for a 2DHS to date. Using a back-gated sample geometry, the density dependence of mobility was studied from 2.8 x 10^10 cm^-2 to 1 x 10^11 cm^-2. The mobility vs. density cannot be fit to a power law dependence of the form mu ~ p^alpha using a single exponent alpha. Our data indicate a continuous evolution of the power law with alpha ranging from ~ 0.7 at high density and increasing to ~ 1.7 at the lowest densities measured. Calculations specific to our structure indicate a crossover of the dominant scattering mechanism from uniform background impurity scattering at high density to remote ionized impurity scattering at low densities. This is the first observation of a carrier density-induced transition from background impurity dominated to remote dopant dominated transport in a single sample., Comment: 4 pages, 5 figures, prepared with LaTex2e

We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4mK.

Recent experiments on microwave-irradiated high-mobility two-dimensional electron systems revealed a novel photoresistivity peak in the vicinity of the second cyclotron resonance harmonic. Here we report on the nonlinear transport measurements and demonstrate that the peak can be induced by modest dc fields and that its position is not affected even by strong dc fields, in contrast to microwave-induced resistance oscillations that shift to higher magnetic fields. These findings reinforce the notion that the peak cannot be described by existing models and provides important constraints for further theoretical considerations., Comment: 4 pages, 3 figures

We report the observation of a remarkably strong microwave photoresistivity effect in a high-mobility two-dimensional electron system subject to a weak magnetic field and low temperature. The effect manifests itself as a giant microwave-induced resistivity peak which, in contrast to microwave-induced resistance oscillations, appears only near the second harmonic of the cyclotron resonance and only at sufficiently high microwave frequencies. Appearing in the regime linear in microwave intensity, the peak can be more than an order of magnitude stronger than the microwave-induced resistance oscillations and cannot be explained by existing theories., Comment: 4 pages, 4 figures

We report the observation of a parallel magnetic field induced metal-insulator transition (MIT) in a high-mobility two-dimensional electron gas (2DEG) for which spin and localization physics most likely play no major role. The high-mobility metallic phase at low field is consistent with the established Fermi liquid transport theory including phonon scattering, whereas the insulating phase at higher field shows a large negative temperature dependence at resistances much smaller than the quantum of resistance, $h/e^2$. We argue that this observation is a direct manifestation of a quantum-classical crossover arising predominantly from the magneto-orbital coupling between the finite width of the 2DEG and the in-plane magnetic field., Comment: 4 pages, 2 figures

We have studied the effect of an in-plane magnetic field on Hall field-induced resistance oscillations in high mobility two-dimensional electron systems. We have found that the oscillation frequency depends only on the perpendicular component of the magnetic field but the oscillation amplitude decays exponentially with an in-plane component. While these findings cannot be accounted for by existing theories of nonlinear transport, our analysis suggests that the decay can be explained by an in-plane magnetic field-induced modification of the quantum scattering rate., Comment: 4 pages, 3 figures

We demonstrate that counterflowing electrical currents can move through the bulk of the excitonic quantized Hall phase found in bilayer two-dimensional electron systems (2DES) even as charged excitations cannot. These counterflowing currents are transported by neutral excitons which are emitted and absorbed at the inner and outer boundaries of an annular 2DES sample via an Andreev reflection process., Comment: 4+ pages, 4 figures. Revised version as accepted for publication in Physical Review Letters

Evidence is presented for the finite wave vector crossing of the two lowest one-dimensional spin-split subbands in quantum point contacts fabricated from two-dimensional hole gases with strong spin-orbit interaction. This phenomenon offers an elegant explanation for the anomalous sign of the spin polarization filtered by a point contact, as observed in magnetic focusing experiments. Anticrossing is introduced by a magnetic field parallel to the channel or an asymmetric potential transverse to it. Controlling the magnitude of the spin-splitting affords a novel mechanism for inverting the sign of the spin polarization., Comment: 4 pages, 3 figures

Coulomb exchange interactions of electrons in the nu=3 quantum Hall state are determined from two inter-Landau level spin-flip excitations measured by resonant inelastic light scattering. The two coupled collective excitations are linked to inter-Landau level spin-flip transitions arising from the N=0 and N=1 Landau levels. The strong repulsion between the two spin-flip modes in the long-wave limit is clearly manifested in spectra displaying Coulomb exchange contributions that are comparable to the exchange energy for the quantum Hall state at nu=1. Theoretical calculations within the Hartree-Fock approximation are in a good agreement with measured energies of spin-flip collective excitations., Comment: 5 pages, 3 figures, to appear in PRB Rapid Communications

Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy., Comment: 8 pages, 6 figures

We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility 3X10^7cm^2/Vs) GaAs/AlGaAs quantum wells (QWs) under millimeterwave irradiation and a weak magnetic field. Such a spike is superposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO) but having an amplitude > 300% of the MIRO, and a typical FWHM ~50 mK, comparable with the Landau level width. Systematic studies show a correlation between the spike and a pronounced negative magnetoresistance in these QWs, suggesting a mechanism based on the interplay of strong scatterers and smooth disorder. Alternatively, the spike may be interpreted as a manifestation of quantum interference between the quadrupole resonance and the higher-order cyclotron transition in well-separated Landau levels., Comment: 4pages, 4figures