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Recent breakthroughs in artificial neural networks (ANNs) have spurred interest in efficient computational paradigms where the energy and time costs for training and inference are reduced. One promising contender for efficient ANN implementation is crossbar arrays of resistive memory elements that emulate the synaptic strength between neurons within the ANN. Organic nonvolatile redox memory has recently been demonstrated as a promising device for neuromorphic computing, offering a continuous range of linearly programmable resistance states and tunable electronic and electrochemical properties, opening a path toward massively parallel and energy efficient ANN implementation. However, one of the key issues with implementations relying on electrochemical gating of organic materials is the state-retention time and device stability. Here, revealed are the mechanisms leading to state loss and cycling instability in redox-gated neuromorphic devices: parasitic redox reactions and out-diffusion of reducing additives. The results of this study are used to design an encapsulation structure which shows an order of magnitude improvement in state retention and cycling stability for poly(3,4-ethylenedioxythiophene)/polyethyleneimine:poly(styrene sulfonate) devices by tuning the concentration of additives, implementing a solid-state electrolyte, and encapsulating devices in an inert environment. Finally, a comparison is made between programming range and state retention to optimize device operation.

A variety of optical applications rely on the absorption and reemission of light. The quantum yield of this process often plays an essential role. When the quantum yield deviates from unity by significantly less than 1%, applications such as luminescent concentrators and optical refrigerators become possible. To evaluate such high performance, we develop a measurement technique for luminescence efficiency with sufficient accuracy below one part per thousand. Photothermal threshold quantum yield is based on the quantization of light to minimize overall measurement uncertainty. This technique is used to guide a procedure capable of making ensembles of near-unity emitting cadmium selenide/cadmium sulfide (CdSe/CdS) core-shell quantum dots. We obtain a photothermal threshold quantum yield luminescence efficiency of 99.6 ± 0.2%, indicating nearly complete suppression of nonradiative decay channels.

Poly(3,4-ethylenedioxythiophene) blended with polystyrenesulfonate and poly(styrenesulfonic acid), PEDOT:PSS, has found widespread use in organic electronics. Although PEDOT:PSS is commonly used in its doped electrically conducting state, the ability to efficiently convert PEDOT:PSS to its undoped nonconducting state is of interest for a wide variety of applications ranging from biosensors to organic neuromorphic devices. Exposure to aliphatic monoamines, acting as an electron donor and Brønsted-Lowry base, has been reported to be partly successful, but monoamines are unable to fully dedope PEDOT:PSS. Remarkably, some - but not all - polyamines can dedope PEDOT:PSS very efficiently to very low conductivity levels, but the exact chemical mechanism involved is not understood. Here, we study the dedoping efficacy of 21 different aliphatic amines. We identify the presence of two or more primary amines, which can participate in an intramolecular reaction, as the key structural motif that endows polyamines with high PEDOT:PSS dedoping strength. A multistep reaction mechanism, involving sequential electron transfer and deprotonation steps, is proposed that consistently explains the experimental results. Finally, we provide a simple method to convert the commonly used aqueous PEDOT:PSS dispersion into a precursor formulation that forms fully dedoped PEDOT:PSS films after spin coating and subsequent thermal annealing.

A variety of optical applications rely on the absorption and reemission of light. The quantum yield of this process often plays an essential role. When the quantum yield deviates from unity by significantly less than 1%, applications such as luminescent concentrators and optical refrigerators become possible. To evaluate such high performance, we develop a measurement technique for luminescence efficiency with sufficient accuracy below one part per thousand. Photothermal threshold quantum yield is based on the quantization of light to minimize overall measurement uncertainty. This technique is used to guide a procedure capable of making ensembles of near-unity emitting cadmium selenide/cadmium sulfide (CdSe/CdS) core-shell quantum dots. We obtain a photothermal threshold quantum yield luminescence efficiency of 99.6 ± 0.2%, indicating nearly complete suppression of nonradiative decay channels.

The promise of lead halide hybrid perovskites for optoelectronic applications makes finding less-toxic alternatives a priority. The double perovskite Cs2AgBiBr6 (1) represents one such alternative, offering long carrier lifetimes and greater stability under ambient conditions. However, the large and indirect 1.95 eV bandgap hinders its potential as a solar absorber. Here we report that alloying crystals of 1 with up to 1 atom% Sn results in a bandgap reduction of up to ca. 0.5 eV while maintaining low toxicity. Crystals can be alloyed with up to 1 atom% Sn and the predominant substitution pathway appears to be a ∼2 : 1 substitution of Sn2+ and Sn4+ for Ag+ and Bi3+, respectively, with Ag+ vacancies providing charge compensation. Spincoated films of 1 accommodate a higher Sn loading, up to 4 atom% Sn, where we see mostly Sn2+ substitution for both Ag+ and Bi3+. Density functional theory (DFT) calculations ascribe the bandgap redshift to the introduction of Sn impurity bands below the conduction band minimum of the host lattice. Using optical absorption spectroscopy, photothermal deflection spectroscopy, X-ray absorption spectroscopy, 119Sn NMR, redox titration, single-crystal and powder X-ray diffraction, multiple elemental analysis and imaging techniques, and DFT calculations, we provide a detailed analysis of the Sn content and oxidation state, dominant substitution sites, and charge-compensating defects in Sn-alloyed Cs2AgBiBr6 (1:Sn) crystals and films. An understanding of heterovalent alloying in halide double perovskites opens the door to a wider breadth of potential alloying agents for manipulating their band structures in a predictable manner.

The properties of organic solids depend on their structure and morphology, yet direct imaging using conventional electron microscopy methods is hampered by the complex internal structure of these materials and their sensitivity to electron beams. Here, we manage to observe the nanocrystalline structure of two organic molecular thin-film systems using transmission electron microscopy by employing a scanning nanodiffraction method that allows for full access to reciprocal space over the size of a spatially localized probe (~2 nm). The morphologies revealed by this technique vary from grains with pronounced segmentation of the structure-characterized by sharp grain boundaries and overlapping domains-to liquid-crystal structures with crystalline orientations varying smoothly over all possible rotations that contain disclinations representing singularities in the director field. The results show how structure-property relationships can be visualized in organic systems using techniques previously only available for hard materials such as metals and ceramics.

Charge transport in conjugated polymer semiconductors has traditionally been thought to be limited to a low-mobility regime by pronounced energetic disorder. Much progress has recently been made in advancing carrier mobilities in field-effect transistors through developing low-disorder conjugated polymers. However, in diodes these polymers have to date not shown much improved mobilities, presumably reflecting the fact that in diodes lower carrier concentrations are available to fill up residual tail states in the density of states. Here, we show that the bulk charge transport in low-disorder polymers is limited by water-induced trap states and that their concentration can be dramatically reduced through incorporating small molecular additives into the polymer film. Upon incorporation of the additives we achieve space-charge limited current characteristics that resemble molecular single crystals such as rubrene with high, trap-free SCLC mobilities up to 0.2 cm2/Vs and a width of the residual tail state distribution comparable to kBT.