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1,500 results on '"Sato, Fumihiko"'

202. Predictive value of CD8 / FOXP3 ratio combined with PD‐L1 expression for radiosensitivity in patients with squamous cell carcinoma of the larynx receiving definitive radiation therapy

Author

Ono, Takeharu, primary, Azuma, Koichi, additional, Kawahara, Akihiko, additional, Kakuma, Tatsuyuki, additional, Sato, Fumihiko, additional, Akiba, Jun, additional, Tanaka, Norimitsu, additional, Abe, Toshi, additional, Chitose, Shun‐ichi, additional, and Umeno, Hirohito, additional

Published
2020
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209. A 60-GHz f(sub T) super self-assigned selectively grown SiGe-base (SSSB) bipolar transistor with trench isolation fabricated on SOI substrate and its application to 20-Gb/s optical transmitter IC's

Author

Sato, Fumihiko, Hashimoto, Takasuke, Tezuka, Hiroshi, Soda, Masaaki, Suzaki, Tetsuyuki, Tashiro, Tsutomu, and Tatsumi, Toru

Subjects
Bipolar transistors -- Design and construction, Optical communications -- Equipment and supplies, Silicon-on-isolator -- Usage, Business, Electronics, Electronics and electrical industries
Abstract

A 60-GHz f(sub T) self-aligned selectively-grown SiGe-base (SSSB) bipolar transistor has been designed while its use as a 20-Gb/s optical fiber transmitter IC has been studied. A bond-and-etchback silicon-on-insulator substrate was used in fabricating the SSSB transistor. A selective epitaxial growth procedure was used in making the SiGe base while the emitter had a width of 0.4 micrometer to reduce the parasitic capacitances and base resistance. The IC was realized by using an internal high-speed clock buffer that generates balanced internal clock signals.

Published
1999

228. Dysphagia Precipitated by Cervical Lordosis in the Aged.

Author

Sato, Kiminori, Chitose, Shun-ichi, Sato, Kiminobu, Sato, Fumihiko, Ono, Takeharu, and Umeno, Hirohito

Subjects
CERVICAL vertebrae, DEGLUTITION, DEGLUTITION disorders, LORDOSIS, DISEASE complications, SYMPTOMS, OLD age
Abstract

A lordotic curve of the cervical spine in the aged is a physiological curvature of the cervical spine. The swallowing disorder precipitated by lordosis of the cervical spine in the aged, the swallowing function and intervention were reported on. An 86-year-old woman complained of swallowing difficulty for a few months. A lordotic curve (physiological curvature) of the cervical spine was observed. In the neutral neck position, the cervical lordotic angle was 29° using the Cobb C2-C7 method. When the lordotic curve of the cervical spine was intentionally straightened, the lordotic angle became 0°, the laryngeal elevation changed from 0.5 times the height of a cervical vertebra to 1.75 times, the laryngeal elevation delay time changed from 0.5 seconds to 0.23, the percent laryngeal elevation changed from 50% to 72% and pharyngeal transit time changed from 0.83 seconds to 0.75. Lordosis of the cervical spine inhibited laryngeal elevation and influenced the swallowing function. In cases in which lordotic curvature of the cervical spine adversely influences the swallowing function in the aged, rehabilitation to manage the lordosis of the cervical spine is useful. For the purpose of effective intervention, not only diagnostic but also therapeutic videofluorographic examination of swallowing is very important. [ABSTRACT FROM AUTHOR]

Published
2022
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232. Sub-20 ps ECL circuits with high-performance super self-aligned selectively grown SiGe base (SSSB) bipolar transistors

Author

Sato, Fumihiko, Hashimoto, Takasuke, Tatsumi, Toru, and Tashiro, Tsutomu

Subjects
Emitter-coupled logic -- Research, Bipolar transistors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

The Super Self-aligned Selectively grown graded-SiGe Base (SSSB) transistor, also known as the high f(max) self-aligned SiGe-base bipolar transistor, exhibits peculiar characteristic features. The features include an intrinsic base and a link base engineering generated borosilicate glass structure. The SSSB also exhibits high current gain and a very low base link resistance.

Published
1995

236. A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology

Author

Sato, Fumihiko, Tatsumi, Toru, Hashimoto, Takasuke, and Tashiro, Tsutomu

Subjects
Bipolar transistors -- Design and construction, Chemical vapor deposition -- Analysis, Epitaxy -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

Cold-wall type ultra-high vacuum/chemical vapor deposition technology helps develop a selective epitaxial growth (SEG) method to construct self-aligned selectivity grown SiGe base (SSSB) bipolar transistor. The SEG method involves optimal growth conditions and controls the thickness and doping of the transistor layers. The selective growth continues till the single crystalline Si substrate and poly-Si layer fuse together.

Published
1994

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