529 results on '"Sun, Changzheng"'
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202. Influence of point defects on optical properties of GaN-based materials by first principle study
203. Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
204. Characteristics of hexagonal c-oriented titanium film as the template for GaN epitaxy on glass substrate by electron beam evaporation
205. Analysis of OAM Mode Purity of Integrated Optical Vortex Beam Emitters
206. Aluminum nitride-on-sapphire platform for integrated high-Q microresonators
207. Raman-assisted broadband Kerr frequency comb generation in AlN-on-sapphire microresonators
208. Studies on the nucleation of MBE grown III-nitride nanowires on Si
209. Relative Intensity Noise Characteristics of Single-mode Laser Array under Injection Locking
210. Novel Linewidth Narrowing Scheme of DFB Lasers Based on Integrated Mutual Injection Locking
211. Analysis of Dynamic Common Mode Rejection Ratio of Balanced Uni-Traveling-Carrier Photodetectors
212. Microwave Photonic Devices Based on High-Q AlN Microring Resonators
213. Broadband visible comb generation in AlN-on-sapphire microresonators
214. Design of Integrated Orbital Angular Momentum (OAM) Emitter Based on AlGaInAs/InP Epitaxial Wafer
215. Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding
216. Substitution of Percutaneous Ethanol Injection with a Low Molecular Weight Peptide Gel Mimicking Chemoembolization for Cancer Therapy
217. A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure
218. Reduction of atrial fibrillation by Tanshinone IIA in chronic heart failure
219. UNC119 mediates gambogic acid-induced cell-cycle dysregulation through the Gsk3β/β-catenin pathway in hepatocellular carcinoma cells
220. Design of high-compactness freeform optical surfaces via energy accumulating optimization
221. Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure
222. Hybrid integration of high-speed MUTC-PD on SOI
223. Abnormal Stranski–Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices.
224. Generation of multiple near-visible comb lines in an AlN microring via χ(2) and χ(3) optical nonlinearities.
225. A simple fabrication process for SiNx/SiO2 waveguide based on sidewall oxidation of patterned silicon substrate
226. Model for Low-Temperature Growth of Gallium Nitride
227. Broadband tunable microwave photonic phase shifter with low RF power variation in a high-Q AlN microring
228. Ultrafast dual-drifting layer uni-traveling carrier photodiode with high saturation current
229. High-power, wide-bandwidth modified uni-traveling-carrier photodiodes with an optimized depletion region
230. Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/ InxO ohmic contacts with microstructure formed by annealing in oxygen
231. Surface acoustic wave devices fabricated on epitaxial AlN film
232. Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis
233. MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
234. Tunable Microwave Phase Shifter with Low RF-Power Variation Based on High-Q Epitaxial AlN Ring Resonator
235. Enhancement on extraction efficiency of quantum cascade detectors utilizing localized built-in electric field.
236. High aspect ratio dry etching of AlGaAs by segmented processing and in-situ sidewall passivation.
237. Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes Under Mutual Injection Locking
238. Effect of NH4OH Treatment on Plasma‐Assisted InP/Al2O3/SOI Direct Wafer Bonding.
239. Circular optical phased array for 360° constant amplitude scanning
240. Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
241. Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure
242. Growth of light-emitting devices based on InGaN quantum dots by MOVPE
243. Fabrication of GaN‐based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching
244. Semiconductor modulators and photodiodes for microwave photonic systems
245. Improvement of thermal properties in epitaxial aluminum nitride pedestal microring
246. InGaN蓝光LED内量子效率的评测
247. GaN-based Ridge Waveguides with Very Smooth and Vertical Sidewalls by ICP Dry Etching and Chemical Etching
248. Dual-Drifting-Layer Uni-Traveling Carrier Photodiode for Wide Bandwidth and High Power Performance
249. Sodium Sulfate Corrosion of Metro Tunnel Lining Concrete Strength Test Curve of Impact Study
250. A simple fabrication process for SiN x /SiO 2 waveguide based on sidewall oxidation of patterned silicon substrate.
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