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237. Bridging TiO2 nanoparticles using graphene for use in dye-sensitized solar cells.

Author

Wu, Tien‐Tsai and Ting, Jyh‐Ming

Subjects
*GRAPHENE, *TITANIUM dioxide nanoparticles, *DYE-sensitized solar cells, *TRANSMISSION electron microscopy, *PHOTOCURRENTS
Abstract

The use of graphene to bridge TiO2 particles in the photoanode of dye-sensitized solar cell for reduced electrical resistance has been investigated. The difficulty in dispersing graphene in TiO2 paste was overcome by first dispersing graphene oxide (GO) into the TiO2 paste. The GO was then reduced to graphene after the sintering of TiO2. This is shown through transmission electron microscopy and X-ray photoelectron spectroscopy analysis. Cell performance was evaluated using a solar simulator, incident photon to electron conversion efficiency, intensity modulated photocurrent/photovoltage spectroscopy under blue light, and electrochemical impedance spectroscopy. Depending on the amount of graphene in the photoanode, the cell performance was enhanced to different degrees. A maximum increase of 11.4% in the cell efficiency has been obtained. In particular, the inclusion of graphene has reduced the electron diffusion time by as much as 23.4%, i.e. from 4.74 to 3.63 ms and increased the electron lifetime by as much as 42.3%, i.e. from 19.58 to 27.85 ms. [ABSTRACT FROM AUTHOR]

Published
2014
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238. Effects of sulfurization and Cu/In ratio on the performance of the CuInS2 solar cell.

Author

Tsai, Chia‐Hung, Mishra, Dillip Kumar, Su, Chia‐Ying, and Ting, Jyh‐Ming

Subjects
SOLAR cells, PHOTOVOLTAIC cells, THIN films, CHALCOGENIDES, EVAPORATION (Chemistry), QUARTZ, TEMPERATURE effect, GRAIN size
Abstract

SUMMARY Photovoltaic CuInS2 (CIS) thin films were prepared from thermally evaporated Cu/In precursors, having various Cu/In ratios, under different sulfurization conditions. The sulfurization was carried out in a quartz tube furnace under a steady or flowing H2S/Ar gas mixture at various temperatures ranging from 450 to 550 °C. The effects of the Cu/In ratio and sulfurization condition on the grain size, surface morphology, surface roughness, microstructure and defect formation of the resulting CIS films were examined. It was found that the effects depend on the processing conditions. Particularly, we show that sub-bandgap generated defects can be inferred by photoluminescence data. Selected CIS thin films were used as absorber layers for the fabrication of thin film solar cells. The best solar cell efficiency of 6.29% was obtained from the 500 °C-sulfurized absorber layer having a Cu/In ratio of 1.8. Effect of absorber layer characteristics on the cell efficiency was also discussed. Copyright © 2013 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Published
2014
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