470 results on '"Tsoukalas, Dimitris"'
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202. Investigations of Salicided and Salicide-Blocked MOSFETs for ESD Including ESD Simulation
203. Bipolar Transistor’s Intrinsic and Extrinsic Capacitance Determination
204. Accounting for Quantum Effects and Polysilicon Depletion in an Analytical Design-Oriented MOSFET Model
205. A Practical Approach to Modeling Strained Silicon NMOS Devices
206. A Simulation Evaluation of 100nm CMOS Device Performance
207. Tcad Driven Process Design of 0.15μm Fully-Depleted Soi Transistor for Low Power Applications
208. Neutron-Ser Modeling & Simulation for 0.181,1,M Cmos Technology
209. The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization
210. A Figure of Merit for Flash Memory Multi-Layer Tunnel Dielectrics
211. Modelling of High-Voltage SOI-LDMOS Transistors including Self-Heating
212. A Comparative Study Of Two Numerical Techniques For Inductance Calculation In Interconnect Structures
213. Comparison of finite element stress simulation with X-ray measurement for the aluminum conductors with different passivation topography
214. Compact device model for partially depletedSOI-MOSFETs : For simulation of transient drain current arising from the floating body effects
215. An Efficient Tool for Extraction of Interconnect Models in Submicron Layouts
216. Modeling the Impact of Body-to-body Leakage in Partially-Depleted SOI CMOS Technology
217. 3D Thermal Analysis for SOI and its impact on Circuit Performance
218. Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrödinger Equation with a Hydrodynamic Transport Model
219. Two-Dimensional Model for the Subthreshold Slope in Deep-Submicron Fully-Depleted SOI MOSFET’s
220. A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism
221. Impact of Substrate Resistance on Drain Current Noise in MOSFETs
222. Compact MOS Modelling for RF CMOS Circuit Simulation
223. Modeling of Reactive Ion Etching for Si/Si02Systems
224. A Computational Efficient Method For Hbt Intermodulation Distortions And Two-Tone Characteristics Simulation
225. Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in Gaas Mesfets
226. Monte Carlo Simulation of Multi-band Carrier Transport in Semiconductor Materials with Complex Unit Cells
227. Modeling Semiconductor Carbon Nanotube Rectifying Heterojunctions
228. Statistical Analysis of VLSI Using TCAD
229. Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs
230. An Efficient Frequency-Domain Analysis Technique of MOSFET Operation
231. System Level Modeling of an Electrostatic Torsional Actuator
232. Simulation and Prediction of Aspect Ratio Dependent Phenomena during Si02 and Si Feature Etching in Fluorocarbon Plasmas
233. Monte Carlo Impurity Diffusion Simulation Considering Charged Species
234. Interstitial Cluster Evolution and Transient Phenomena in Si-crystal
235. Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET
236. 3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER
237. Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation
238. Electron Velocity in Sub-50-Nm Channel Mosfets
239. Boundary Condition Models for Terminal Current Fluctuations
240. 2d Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources
241. Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation
242. Acceleration of Lattice Monte Carlo Simulations and Application to Diffusion/Clustering of As at High Concentrations
243. Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication
244. Numerical Simulation of Non-Equilibrium, Ultra-Rapid Heating of Si-thin films by Nanosecond-Pulse Excimer Lasers
245. Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD
246. Ab-initio Electrodynamic Modeling of On-Chip Back-End Structures
247. Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor
248. Analysis of Hot-Carrier-Induced Oxide Degradation in MOSFETs by Means of Full-Band Monte Carlo Simulation
249. Fully 2d Quantum-Mechanical Simulation of Nanoscale Mosfets
250. Finite Element Simulation of 2d Quantum Effects In Ultra Short Channel Mosfets With High-K Dielectric Gates
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