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This paper reports the study of growth kinetics of ion beam sputtered aluminum thin films. Dynamic scaling theory was used to derive the kinetics from AFM measurements. AFM imaging revealed that surface incorporates distinctly different morphologies. Variation in deposition times resulted in such distinctiveness. The growth governing static (alpha) as well as dynamic (beta) scaling exponents have been determined. The exponent (alpha) decreased as the deposition time increased from 3 to 15 minutes. Consequently, the interfacial width (xi) also decreased with critical length (Lc), accompanied with an increase in surface roughness. Surface diffusion becomes a major surface roughening phenomenon that occurs during deposition carried out over a short period of 3 minutes. Extension of deposition time to 15 minutes brought in bulk diffusion process to dominate which eventually led to smoothening of a continuous film.

Reactive dual ion beam sputter deposition of AlN thin films was carried out for the analysis of surface growth characteristics by Atomic Force Microscopy. The variation of roughness as a function of deposition time was analysed by Dynamic Scaling Theory (DST). Two distinct exponents, static and dynamic were used to unravel the film growth characteristics. As the deposition time increased, static scaling exponent decreased gradually and substrate surface coverage was increased which is indicated by a decrease in critical length Lc. The rms roughness of the film was increased from 1.99 to 3.42 nm as the deposition time was increased from 3 minutes to 15 minutes. Dynamic scaling exponent was found to be 0.36. During the growth, surface diffusion (n = 4) becomes the major roughening phenomenon while Bulk diffusion (n = 3) turns into the dominating smoothening phenomenon., Comment: 10 pages, 8 figures

Lattice dynamics and high pressure phase transitions in AWO4 (A = Ba, Sr, Ca and Pb) have been investigated using inelastic neutron scattering experiments, ab-initio density functional theory calculations and extensive molecular dynamics simulations. The vibrational modes that are internal to WO4 tetrahedra occur at the highest energies consistent with the relative stability of WO4 tetrahedra. The neutron data and the ab-initio calculations are found to be in excellent agreement. The neutron and structural data are used to develop and validate an interatomic potential model. The model is used for classical molecular dynamics simulations to study their response to high pressure. We have calculated the enthalpies of the scheelite and fergusonite phases as a function of pressure, which confirms that the scheelite to fergusonite transition is second order in nature. With increase in pressure, there is a gradual change in the AO8 polyhedra, while there is no apparent change in the WO4 tetrahedra. We found that that all the four tungstates amorphize at high pressure. This is in good agreement with available experimental observations which show amorphization at around 45 GPa in BaWO4 and 40 GPa in CaWO4. On amorphization, there is an abrupt increase in the coordination of the W atom while the bisdisphenoids around A atom are considerably distorted. The pair correlation functions of the various atom pairs corroborate these observations. Our observations aid in predicting the pressure of amorphization in SrWO4 and PbWO4, which have not been experimentally reported., Comment: 15 pages, 8 figures

We report catalyst-free direct synthesis of vertical graphene nanosheets (VGNs) on SiO2/Si and quartz substrates using microwave electron cyclotron resonance - plasma enhanced chemical vapor deposition. The evolution of VGNs is studied systematically at different growth stages. Raman analysis as a function of growth time reveals that two different disorder-induced competing mechanisms contributing to the defect band intensity. The VGNs grown on SiO2/Si substrates predominantly consists of both vacancy-like and hopping defects. On the other hand, the VGNs grown on quartz substrates contain mainly boundary-like defects. XPS studies also corroborate Raman analysis in terms of defect density and vacancy-like defects for the VGNs grown on SiO2/Si substrates. Moreover, the grown VGNs exhibit a high optical transmittance from 95 to 78 % at 550 nm and the sheet resistance varies from 30 to 2.17 kohms/square depending on growth time., Comment: 19 pages, 8 figures, 1 table; Accepted in Journal of Raman Spectroscopy (2014)

Lithium transition metal phospho-olivines are useful electrode materials, owing to their stability, high safety, low cost and cyclability. We report phonon studies using neutron inelastic scattering experiments, ab-initio density functional theory calculations and potential model calculations on LiMPO4 (M=Mn, Fe) at ambient and high temperature to understand the microscopic picture of Li sub-lattice. The experiments are in good agreement with calculations. The lattice dynamics calculations indicate instability of a zone-centre as well as zone-boundary modes along (100) at volume corresponding to high temperature. The unstable phonon modes show mainly large vibration of Li atoms in the x-z plane of the orthorhombic structure (space group Pbnm). Molecular dynamics simulations with increasing temperature indicate large mean square displacement of Li as compared to other constituent atoms. The computed pair-correlations between various atom pairs show that there is local disorder occurring in the lithium sub-lattice with increasing temperature, while other pairs show minimal changes. The results find the two compounds to be thermally stable up to high temperatures, which is a desirable trait for its battery applications., Comment: 19 Pages, 12 Figures

Localized surface plasmon polaritons in conducting structures give rise to enhancements of electromagnetic local fields and extinction efficiencies. Resonant conducting structures are conventionally fabricated with a fixed geometry that determines their plasmonic response. Here, we challenge this conventional approach by demonstrating the photo-generation of plasmonic materials (THz plasmonic antennas) on a flat semiconductor layer by the structured optical illumination through a spatial light modulator. Free charge carriers are photo-excited only on selected areas, which enables the definition of different plasmonic antennas on the same sample by simply changing the illumination pattern, thus without the need of physically structuring the sample. These results open a wide range of possibilities for an all-optical spatial and temporal control of resonances on plasmonic surfaces and the concomitant control of THz extinction and local field enhancements., Comment: 17 pages, 5 figures