201. Hysteresis mechanism in current–voltage characteristics of ZrOxfilms prepared by the sol–gel method
- Author
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Wei Chung Chen, Yi Min Chin, Chia-Jyi Liu, and Yow-Jon Lin
- Subjects
Photoluminescence ,Acoustics and Ultrasonics ,Chemistry ,Wide-bandgap semiconductor ,Analytical chemistry ,Conductivity ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Indium tin oxide ,Hysteresis ,X-ray photoelectron spectroscopy ,Chemical engineering ,Thin film ,Sol-gel - Abstract
In the study, ZrOx films were deposited on substrates by the sol?gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrOx films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current?voltage characteristics of indium tin oxide/ZrOx/Au devices.
- Published
- 2009
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