201. A Broadband Millimeter-Wave Continuous-Mode Class-F Power Amplifier Based on the Deembedded Transistor Model
- Author
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Zhenghe Feng, Xiaofan Chen, Fadhel M. Ghannouchi, Dehan Wang, and Wenhua Chen
- Subjects
Transistor model ,Physics ,business.industry ,Amplifier ,Bandwidth (signal processing) ,Transistor ,020206 networking & telecommunications ,02 engineering and technology ,Condensed Matter Physics ,law.invention ,law ,Harmonics ,Extremely high frequency ,Broadband ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Electrical impedance - Abstract
In this letter, a broadband millimeter-wave (mm-wave) continuous-mode Class-F power amplifier (PA) based on the deembedded transistor model is proposed for the fifth-generation (5G) applications. To design the output matching network at the intrinsic current-generator plane, an $S$ -parameter fitting method is proposed to extract the parasitic parameters of nonpackaged transistors over a wide frequency range. The PA is implemented in the 0.13- $\mu \text{m}$ SiGe BiCMOS process, which occupies only 0.42 mm2. By controlling the even and odd harmonics impedance, the PA achieves a 78.2% −3-dB small-signal gain fractional bandwidth from 21.1 to 48.2 GHz. The −1-dB $P_{\mathrm {sat}}$ bandwidth covers 21–43 GHz (68.8% fractional bandwidth) and the saturated output powers are 17.2–18.1 dBm. Meanwhile, the designed PA provides a 24.1%–32.1% peak power-added efficiency (PAE) over the band.
- Published
- 2020
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