201. Epitaxial growth and electric characteristics of SrMoO3 thin films
- Author
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Yong Ding, Huibin Lu, D. F. Cui, X. L. Chen, Y. C. Lan, Yueliang Zhou, Lidong Chen, F. Chen, T. Zhao, H. H. Wang, Guozhen Yang, J. K. Liang, and Zhen Chen
- Subjects
Materials science ,business.industry ,Analytical chemistry ,Surfaces and Interfaces ,Condensed Matter Physics ,Epitaxy ,Surfaces, Coatings and Films ,Pulsed laser deposition ,Carbon film ,Electron diffraction ,X-ray photoelectron spectroscopy ,Electrical resistivity and conductivity ,Transmission electron microscopy ,Optoelectronics ,Thin film ,business - Abstract
Using computer-controlled pulsed laser deposition, high quality SrMoO3 thin films have been epitaxially grown on SrTiO3 (001) substrates. A growth interruption technique was employed for better epitaxy, and layer-by-layer growth was obtained by the intensity oscillations of reflection high-energy electron diffraction. The films were of epitaxial crystallinity as characterized by high-resolution transmission electron microscopy. The typical root mean square surface roughness was 2.2 A. The SrMoO3 thin films showed metal-like conducting behavior with resistivity on the order of 60–120 μΩ cm between 4 K and room temperature. An x-ray photoelectron spectroscopy study shows that the valence band spectrum of the film has the typical character of a metal, and Mo 4dt2g electrons are responsible for the conduction of the films.
- Published
- 2001
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