201. On the theory of electron transfer reactions at semiconductor electrode/liquid interfaces
- Author
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Yuri Georgievskii, Rudolph A. Marcus, and Yi Qin Gao
- Subjects
Coupling ,business.industry ,Chemistry ,General Physics and Astronomy ,Redox ,Reaction rate ,symbols.namesake ,Electron transfer ,Semiconductor ,symbols ,Slab ,Fermi's golden rule ,Physical and Theoretical Chemistry ,Atomic physics ,business ,Caltech Library Services ,Surface states - Abstract
Electron transfer reaction rate constants at semiconductor/liquid interfaces are calculated using the Fermi Golden Rule and a tight-binding model for the semiconductors. The slab method and a z-transform method are employed in obtaining the electronic structures of semiconductors with surfaces and are compared. The maximum electron transfer rate constants at Si/viologen2+/+ and InP/Me2Fc+/0 interfaces are computed using the tight-binding type calculations for the solid and the extended-Huckel for the coupling to the redox agent at the interface. These results for the bulk states are compared with the experimentally measured values of Lewis and co-workers, and are in reasonable agreement, without adjusting parameters. In the case of InP/liquid interface, the unusual current vs applied potential behavior is additionally interpreted, in part, by the presence of surface states.
- Published
- 2000