Search

In this paper, the impact of ohmic structure on channel-to-channel (C2C) coupling effect in InAlN/GaN double channel (DC) HEMTs is systematically analyzed and studied. For the un-recessed ohmic structure, the electrons in the upper channel can easily inject into the bottom channel due to the ultra-thin InAlN back barrier layer. Therefore, the maximum drain current and transconductance peak of the bottom channel significantly increase. For recessed ohmic structure, the reduced vertical electric field strength of the upper channel can effectively weaken the coupling effect between the two GaN channels. Benefiting from the suppressed vertical transport of electrons in the upper channel, higher drain current and transconductance of the upper channel are obtained in the recessed ohmic structure. In addition, the transmission electron microscope (TEM) microstructural analysis of the DC HEMTs with recessed ohmic structure was also performed. This work shows that the recessed ohmic structure can modulate the electron transport mode in the InAlN/GaN DC HEMTs. The coupling effect of the two channels will play a major role in influencing the characteristics of current gain cutoff frequency ( $\,f_{\mathrm{ T}}$ ) / maximum power gain cutoff frequency ( $\,f_{\mathrm{ max}}$ ) versus $V_{\mathrm{ GS}}$ and have a significant effect on large-signal characteristics, which is quite attractive for the fabrication of power microwave GaN-based HEMTs with wide gate swing.

Background: The exact mechanisms and targeted therapies for atopic dermatitis (AD), contact dermatitis (CD), and psoriasis (PS) remain unknown. Objectives: This study aimed to identify the biomarkers related to immune and novel therapeutic drugs for AD, CD, and PS. Methods: The GSE153007 dataset including 12 AD, 9 CD, and 14 PS samples and 40 control samples, which was obtained from the Gene Expression Omnibus database and analyzed. The immune infiltration level of each sample was then evaluated using the single-sample gene set enrichment analysis (ssGSEA). Then, we screened for immune-related differentially expressed genes (DEGs) that overlapped. The Database for Annotation, Visualization, and Integrated Discovery database was used to perform the gene ontology (GO) biological process. Furthermore, using search tool for the retrieval of interaction gene (STRING), the protein-protein interaction (PPI) was predicted on immune-related DEGs. We also searched the DGIdb database for novel therapeutic drugs for AD, CD, and PS. Results: According to ssGSEA results, most immune cells were highly infiltrated in the disease group. GO analysis indicated that AD, CD, and PS were enriched in signal transduction, inflammatory response, immune response, and innate immune response. We further found hub genes related to AD (CD4, ITGAM), CD (CD8A, CD86), and PS (CD4, CD8A) from PPI network. Moreover, the drug prediction indicated that drugs targeting CSF1R was the most effective for AD, whereas drugs targeting FCGR3A and CD86 were more effective for CD and PS. Conclusion: These immune-associated genes such as FCGR3A, CD86, and CSF1R might be regarded as therapeutic targets for patients with AD, CD, and PS.

A physics-based model and the corresponding simulation framework for the mobile-ionic field-effect transistor (MIFET) exhibiting the ferroelectric-like behaviors are innovatively proposed based on two-dimensional (2D) Poisson’s equation and non-equilibrium Green’s function (NEGF), coupling with ion drift-diffusion equations. The simulation framework captures the dynamic distribution of mobile ions’ concentrations within dielectric along the external electric field. TaN/amorphous-ZrO2/TaN capacitors are experimentally characterized for the model calibration. It is proved that the mobile ions dominate the ferroelectric-like behaviors in MIFETs. Sub-60 mV/decade can be achieved in MIFETs based on the proposed model, which is consistent with the experimental results.

Abstract We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO2 dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage (V G) pulses. Under 100 ns write/erase (W/E) pulse, a memory window greater than 0.56 V and cycling endurance above 106 are obtained. The storied information as short-term plasticity (STP) in the device has a spiking post-synaptic drain current (I D) that is a response to the V G input pulse and spontaneous decay of I D. A refractory period after the stimuli is observed, during which the I D hardly varies with the V G well-emulating the bio-synapse behavior. Short-term memory to long-term memory transition, paired-pulse facilitation, and post-tetanic potentiation are realized by adjusting the V G pulse waveform and number. The experimental results indicate that the amorphous HfO2 NVFET is a potential candidate for artificial bio-synapse applications.

Recently, micro-supercapacitors (MSCs) have undergone major development as next-generation micro-electrochemical energy storage devices for self-powered, integrated, and wearable systems, thanks to their excellent performance capability. In particular, their rapid frequency response characteristics make them potential candidates to replace conventional capacitors and function as alternating current (AC) line filters to rectify pulse energy or as current ripple filters in the kHz range. However, few papers have been published about the associated fundamental device components, architectures, and correct characterization of MSCs applied in filter applications. In addition, it is a huge challenge to achieve a balance between capacitance and frequency response, not yet to be overcome. This review comprehensively summarizes recent advances in MSCs for AC line-filtering, from fundamental mechanisms to appropriate characterization and emerging applications. Special attention is given to progress in microfabrication strategies, electrode materials, and electrolytes for high-frequency MSCs. We also present perspectives and insights into the development of MSCs in different frequency ranges for AC line-filtering applications.

Wide-bandgap (WBG) perovskite solar cells (PSCs) are essential for highly efficient and stable silicon/perovskite tandem solar cells. In this study, we adopted a synthetic strategy with lead thiocyanate (Pb(SCN)2) additive and methylammonium chloride (MACl) posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 eV. The excessive PbI2 was formed at grain boundaries and converted into MAPbI3−xClx perovskites, which are utilized to form the graded heterojunction (GHJ) and compressive strain. This is beneficial for passivating nonradiative recombination defects, suppressing halide phase segregation, and facilitating carrier extraction. Subsequently, the device with GHJ delivered a champion efficiency of 20.30% and superior stability in ambient air and under 85 °C. Finally, we achieved a recorded efficiency of 30.91% for 4-terminal WBG perovskite/TOPCon tandem silicon solar cells. Our findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.

The solar-blind photodetectors based on amorphous Ga2O3 (a-Ga2O3) are attractive in recent years due to their simple fabrication process and good compatibility with different substrates. Herein, the cost-effective and high-performance thin-film transistor (TFT) type solar-blind photodetector based on a-Ga2O3 was realized successfully at room temperature without post-annealing treatment. The a-Ga2O3 phototransistor showed excellent performance under weak ultraviolet (UV) light illumination (30 μW/cm2). In addition to the low dark current (Idark = 7.12 pA), the optimized a-Ga2O3 phototransistor showed a high response to ultraviolet light. The photo-to-dark current ratio (PDCR) reached up to 4.79 × 105 and the photoresponsivity (R) was 151.56 A/W. Meanwhile, the photo-detectivity (D∗) and external quantum efficiency (EQE) were 2.75 × 1015 Jones and 7.38 × 104%, respectively. After being treated with the polyethyleneimine ethoxylated (PEIE) electron-donating layer, the photocurrent of the PEIE/a-Ga2O3 based phototransistor increased so that R and EQE were enlarged up to 206.22 A/W and 1.004 × 105% respectively. Such a-Ga2O3 solar-blind photodetector provides the avenue to develop the inexpensive and high-performance Ga2O3-based solar-blind photodetector.

Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiNx passivation layer is incompatible with the latest process, like the “passivation-prior-to-ohmic” method. Research attention has therefore turned to high-temperature passivation schemes. In this paper, we systematically investigated the differences between the SiNx/GaN interface of two high-temperature passivation schemes, MOCVD-SiNx and LPCVD-SiNx, and investigated their effects on the ohmic contact mechanism. By characterizing the device interface using TEM, we reveal that during the process of MOCVD-SiNx, etching damage and Si diffuses into the semiconductor to form a leakage path and reduce the breakdown voltage of the AlGaN/GaN HEMTs. Moreover, N enrichment at the edge of the ohmic region of the LPCVD-SiNx device indicates that the device is more favorable for TiN formation, thus reducing the ohmic contact resistance, which is beneficial to improving the PAE of the device. Through the CW load-pull test with drain voltage VDS = 20V, LPCVD-SiNx devices obtain a high PAE of 66.35%, which is about 6% higher than MOCVD-SiNx devices. This excellent result indicates that the prospect of LPCVD-SiNx passivation devices used in 5G small terminals will be attractive.

Apigenin (API) possesses excellent antitumor properties but its limited water solubility and low bioavailability restrict its therapeutic impact. Thus, a suitable delivery system is needed to overcome these limitations and improve the therapeutic efficiency. Poly (lactic-co-glycolic acid) (PLGA) is a copolymer extensively utilized in drug delivery. Hyaluronic acid (HA) is a major extracellular matrix component and can specifically bind to CD44 on colon cancer cells. Herein, we aimed to prepare receptor-selective HA-coated PLGA nanoparticles (HA-PLGA-API-NPs) for colon cancers with high expression of CD44; chitosan (CS) was introduced into the system as an intermediate, simultaneously binding HA and PLGA through electrostatic interaction to facilitate a tighter connection between them. API was encapsulated in PLGA to obtain PLGA-API-NPs, which were then sequentially coated with CS and HA to form HA-PLGA-API-NPs. HA-PLGA-API-NPs had a stronger sustained-release capability. The cellular uptake of HA-PLGA-API-NPs was enhanced in HT-29 cells with high expression of CD44. In vivo, HA-PLGA-API-NPs showed enhanced targeting specificity towards the HT-29 ectopic tumor model in nude mice in comparison with PLGA-API-NPs. Overall, HA-PLGA-API-NPs were an effective drug delivery platform for API in the treatment of colon cancers with high expression of CD44.

A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence position, different drain voltage, different LET values, and a different incidence angle on the single-event transient effect of GaN HEMT are simulated. LET stands for the linear energy transfer capacity of a particle, which refers to the amount of energy transferred by the particle to the irradiated substance on the unit path. The simulation results show that for GaN HEMTs, the single-event transient effect is more obvious when the device is in off-state than in on-state. The most sensitive location of GaN HEMTs to the single-event effect is in the region near the drain. The peak transient current increases with the increase in the drain bias and incident ion LET values. The drain charge collection time increases with the angle of incidence of heavy ion.

Thermal management devices such as heat exchangers and heat pipes are integral to safe and efficient performance in multiple engineering applications, including lithium-ion batteries, electric vehicles, electronics, and renewable energy. However, the functional designs of these devices have until now been created around conventional manufacturing constraints, and thermal performance has plateaued as a result. While 3D printing offers the design freedom to address these limitations, there has been a notable lack in high thermal conductivity materials beyond aluminium alloys. Recently, the 3D printing of pure copper to sufficiently high densities has finally taken off, due to the emergence of commercial-grade printers which are now equipped with 1 kW high-power lasers or short-wavelength lasers. Although the capabilities of these new systems appear ideal for processing pure copper as a bulk material, the performance of advanced thermal management devices are strongly dependent on topology-optimised filigree structures, which can require a very different processing window. Hence, this article presents a broad overview of the state-of-the-art in various additive manufacturing technologies used to fabricate pure copper functional filigree geometries comprising thin walls, lattice structures, and porous foams, and identifies opportunities for future developments in the 3D printing of pure copper for advanced thermal management devices.

Abstract Gallium Oxide (Ga2O3) for solar‐blind photodetectors (PDs) has drawing increasing research interest in recent years because of its natural wide bandgap. However, the traditional material growth methods are always complicated and the corresponding PD performance is also not good enough. In this work, amorphous Ga2O3 (a‐Ga2O3) thin film grown by mist chemical deposition applied as solar blind deep ultraviolet phototransistors (PTs) is investigated for the first time, to solve the problem of high cost and time‐consuming by traditional methods. Bottom‐gate a‐Ga2O3 three terminal thin film transistors (TFTs) are fabricated to boost their ultraviolet (UV) photodetection properties. Under the 254 nm UV illumination, the a‐Ga2O3 PTs demonstrates a very high responsivity of 2300 AW−1, external quantum efficiency of 1.12 × 106% and detectivity of 1.87 × 1014 Jones. Such field‐effect PTs with the ultrahigh performance address a significant step toward the feasibility and practicability of Ga2O3 PDs in the future applications.

The semiconductor, β-Ga2O3 is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap (∼4.9 eV) and large Baliga's figure of merit. However, the thermal conductivity of β-Ga2O3 is much lower than that of other wide/ultra-wide bandgap semiconductors, such as SiC and GaN, which results in the deterioration of β-Ga2O3-based device performance and reliability due to self-heating. To overcome this problem, a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline β-Ga2O3 thin films on a highly thermally conductive SiC substrate. Characterization of the transferred β-Ga2O3 thin film indicated a uniform thickness to within ±2.01%, a smooth surface with a roughness of 0.2 nm, and good crystalline quality with an X-ray rocking curves (XRC) full width at half maximum of 80 arcsec. Transient thermoreflectance measurements were employed to investigate the thermal properties. The thermal performance of the fabricated β-Ga2O3/SiC heterostructure was effectively improved in comparison with that of the β-Ga2O3 bulk wafer, and the effective thermal boundary resistance could be further reduced to 7.5 m2K/GW by a post-annealing process. Schottky barrier diodes (SBDs) were fabricated on both a β-Ga2O3/SiC heterostructured material and a β-Ga2O3 bulk wafer. Infrared thermal imaging revealed the temperature increase of the SBDs on β-Ga2O3/SiC to be one quarter that on the β-Ga2O3 bulk wafer with the same applied power, which suggests that the combination of the β-Ga2O3 thin film and SiC substrate with high thermal conductivity promotes heat dissipation in β-Ga2O3-based devices.

Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga2O3) has emerged as a highly viable semiconductor material for new researches. This article mainly focuses on the growth processes, material characteristics, and applications of Ga2O3. Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors, large-size and high-quality β-Ga2O3 single crystals can be efficiently grown with a low cost, making them highly competitive. Thanks to the availability of high-quality single crystals, epitaxial films, and rich material systems, high-performance semiconductor devices based on Ga2O3 go through a booming development in recent years. The defects and interfaces of Ga2O3 are comprehensively analyzed owing to their significant influence on practical applications. In this study, the two most common applications of Ga2O3 materials are introduced. The high breakdown electric field, high working temperature, and excellent Baliga's figure-of-merit of Ga2O3 represent an inspiring prospect for power electronic devices. In addition, the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress. Finally, the summary, challenges, and prospects of the Ga2O3 materials and devices are presented and discussed.

Cell senescence is closely related to autophagy. In this article, we identified a natural nucleoside analogue, cordycepin, that has the ability to significantly improve lysosomal function, enhance the activity of the lysosomal representative protease cathepsin B (CTSB), and promote the expression of the functional protein lysosomal‐associated membrane protein 2 (LAMP2) on the lysosomal membrane. Cordycepin then restores the damaged autophagy level of aging cells by activating the classic AMPK and mTOR–p70S6K signaling pathways, thus inhibiting cell senescence in an H2O2‐induced stress‐induced premature senescence (SIPS) cell model. This study provides new theoretical support for the further development of cordycepin and clinical antiaging drugs to inhibit cell senescence and suggests that the regulatory mechanisms of lysosomes in senescent cells should be considered when treating age‐related diseases.

All‐inorganic perovskite CsPbBr3 has drawn a lot of interest as an active layer applied in photovoltaics due to its outstanding stability in ambient air. However, the procedure of preparing high‐quality CsPbBr3 films still remains a serious challenge because of the tedious process and toxic solvent. Herein, a solvent engineering method that involves green solvent with mixed H2O/C2H5OH to dissolve CsBr is presented to produce all‐inorganic perovskite CsPbBr3 films. CsPbBr3 perovskite solar cells (PSCs) are fabricated based on planar n‐i‐p structure. Compared with CsBr H2O solution, the CsPbBr3 films with optimized mixed solvent method exhibit larger grain size and improved crystallinity. As a result, the carbon‐electrode PSCs based on the mixed solvent method exhibit an increased efficiency of 9.70%. The best‐performing device retains 96.95% of the initial power conversion efficiency (PCE) after storing 1000 h under ambient air and 86.46% of the initial PCE after continuous illumination for 100 min. Moreover, the photodetector based on the same structure as the CsPbBr3 device shows high responsivity and high detectivity. The result not only provides an easy and straightforward method to prepare the uniform and pinhole‐free CsPbBr3 films, but also reduces the toxicity of the CsBr solution used to make the CsPbBr3 PSCs.

We present a method to compress the 2D transverse phase space projections from a hadron accelerator and use that information to predict the beam transmission. This method assumes that obtaining at least three projections of the 4D transverse phase space is possible and that an accurate simulation model is available for the beamline. Using a simulated model, we show that—a computer can train a convolutional autoencoder to reduce phase-space information which can later be used to predict the beam transmission. Finally, we argue that although using projections from a realistic nonlinear distribution produces less accurate results, the method still generalizes well.

Due to their excellent thermal stability and suitable bandgap, all‐inorganic CsPbI x Br3−x perovskite solar cells (PSCs) have attracted extensive attention in the photovoltaic field. However, iodine vacancies and undercoordinated Pb2+ lead to serious nonradiative recombination losses on the surface of CsPbI x Br3−x perovskite film, resulting in lower open‐circuit voltage. At the same time, the cubic phase (α phase) tends to transform into the yellow phase (δ phase) with nonphotoactive in an environment of higher humidity and lower temperature, which limits its further commercial development. In order to solve the above problems, a lot of research work is focused on interface modification and precursors doping to improve the crystallinity, surface hydrophobicity, and phase stability of perovskite films. In this review, the application of organic molecules in all‐inorganic CsPbI x Br3−x PSCs and prospected the research direction in the future to further improve the performance and stability are summarized.

Abstract High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment. It is found that with O3 treatment, the Ge nMOSFETs with ZrO2 dielectric having a EOT of 0.83 nm obtain a peak effective electron mobility (μ eff) of 682 cm2/Vs, which is higher than that of the Si universal mobility at the medium inversion charge density (Q inv). On the other hand, the O3 post-treatment with Al2O3 interfacial layer can provide dramatically enhanced-μ eff, achieving about 50% μ eff improvement as compared to the Si universal mobility at medium Q inv of 5 × 1012 cm−2. These results indicate the potential utilization of ZrO2 dielectric in high-performance Ge nMOSFETs.

To solve the least-cost planning sequence problem of a manufacturing system which is modeled by labeled Petri nets, an algorithm based on backtracking method is proposed. Given a labeled Petri net with its structure and an initial marking, the searching stages are divided into parts according to the given labeled sequence. In each stage, the transition with the minimal cost fires at first. With the observation of all the labels following this rule, the sum of the costs of transitions in the firing sequence is the minimum total cost. The least-cost planning sequence and the corresponding total cost are stored. The proposed method traverses the solution space tree according to the depth-first strategy. By taking the current minimum total cost as the constraint condition, the markings and the sequence of transitions that do not need to be searched can be eliminated in other paths. Therefore, the searching space is reduced. An illustrative example shows the feasibility of the method. Compared with the execution of dynamic programming method, the proposed method needs a smaller amount of calculation and achieves higher work efficiency.

Abstract With the power conversion efficiency (PCE) surpassing 25%, the eye‐catching and promising perovskite materials have proved to be potential competitors in photovoltaic field. Till now, massive efforts have been invested into this blooming flower to further raise its efficiency approaching the Shockley‐Queisser limit (SQ limit) and improve its stability for prolonging effective operation life. In details, various methods including component engineering, structure optimization and interfacial treatment have been used for realizing efficient and stable devices. Especially, the charge transport layers usually play critical roles in effective extraction and transportation of charge carriers. Compared with organic charge transport materials, inorganic materials generally demonstrate excellent stability due to their superior film qualities and inert chemical properties. Moreover, low cost, high charge mobility and material stability have been proved for inorganic electron and hole transport materials. This review summarizes the general progress of different inorganic hole transport materials in perovskite solar cells of recent years for better acquaintance of their contribution in efficient and stable devices. The discussions about performance improvement in the future directions are also provided.

The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.

In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. It was found that the peak value of the transconductance (Gm), current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the TGN-devices were larger than that of the DGN-devices because of the enhanced gate control from the top gate. Although the TGN-devices and DGN-devices demonstrated flattened transconductance, fT and fmax profiles, the first and second transconductance derivatives of the DGN-devices were lower than those of the TGN-devices, implying an improvement in linearity. With the nanochannel width decreased, the peak value of the transconductance and the first and second transconductance derivatives increased, implying the predominant influence of sidewall gate capacitance on the transconductance and linearity. The comparison of gate capacitance for the TGN-devices and DGN-devices revealed that the gate capacitance of the tri-gate structure was not simply a linear superposition of the top planar gate capacitance and sidewall gate capacitance of the dual-gate structure, which could be attributed to the difference in the depletion region shape for tri-gate and dual-gate structures.

Accurate and efficient prediction of airfoil aerodynamic coefficients is essential for improving aircraft performance. However, current research often encounters significant challenges in balancing accuracy with computational efficiency when predicting complex aerodynamic coefficients. In this paper, a Multi-Task Learning framework for Aerodynamic parameters Computation (MTL4AC) of two-dimensional (2D) airfoils is proposed. The MTL4AC processes two key subtasks: flow field prediction and pressure coefficient prediction. These two subtasks complement each other to reveal both global and local aerodynamic changes around the airfoil. The flow field prediction provides a coarse-grained global perspective, which focuses on the pressure and velocity variations on and around the airfoil surface. The pressure coefficient prediction offers a fine-grained local perspective, which concentrates on the pressure distribution on the airfoil surface to accurately calculate lift and drag coefficients. The MTL4AC demonstrated substantial improvements in the experiments conducted on the public dataset, achieving significant enhancements in accuracy and stability. This research contributes an accurate and efficient framework for aerodynamic computation, integrating geometric features and advanced multi-task learning techniques to achieve superior performance in predicting aerodynamic coefficients. [ABSTRACT FROM AUTHOR]

Brown adipose tissue (BAT) has been reported to possess the potential to ameliorate diet‐induced obesity. However, the molecular mechanism of BAT activation in alleviating obese states remains unclear. This study investigated the physiology and BAT index of high‐fat diet‐induced and normal chow mice after 3 weeks of mild cold treatment. Body weights and lipid accumulations in BAT and white adipose tissue were significantly decreased by cold treatment. Lipidomics analysis showed that chronic cold treatment caused the remodeling of major lipid classes in BAT, especially species and phospholipid content, plus the mitochondrial morphology. Evidence indicated mitochondrial biogenesis and thermogenesis, and all the effects caused by BAT activation were more pronounced in obese mice. Taken together, our study revealed that phospholipid metabolism is the fundamental requirement in the anti‐obesity effect of BAT. Practical Applications: Chronic mild cold treatment induced a significant alteration of lipid species and content in BAT and improvement in overall lipid metabolism. Apart from biogenesis and thermogenesis, the categories and morphology of mitochondria were also significantly altered. Though obese mice have inactivated BAT with impaired mitochondria, the superior effect caused by BAT activation on obese mice than control mice indicated the great potential to be evoked. This article may provide lifestyle guidelines for the population with overweight and obesity, especially in teenagers and children. [ABSTRACT FROM AUTHOR]

The wind characteristics of the atmospheric boundary layer (ABL) over complex forest terrains are inherently intricate, influenced by the interplay of rugged topography, seasonal climatic fluctuations, and periodic vegetation dynamics. These effects are especially evident in the near-ground wind field, which exhibits substantial seasonal variability. Conventional wind characterization methods, as outlined in current standards, often fail to accurately capture these seasonal variations, thereby complicating the reconstruction of the near-ground ABL turbulent wind field in complex forest terrains. Accordingly, we employ the narrow band synthetic random flow generation (NSRFG) technique within large eddy simulation (LES) to generate inflow turbulence representing the growing and baldness seasons in a complex forest terrain by adjusting parameter equations for seasonal adaptation and introducing new empirical equations for the turbulent spectrum. Subsequently, we verified the seasonal turbulent flow's statistical characteristics and flow structure to assess its feasibility and validity, ultimately establishing a 'seasonal numerical wind field' model. Finally, the seasonally modified LES-NSRFG method was applied to the numerical simulation of turbulent flow around the Commonwealth Advisory Aeronautical Research Council (CAARC) standard high-rise building model. A comprehensive comparison of wind effects was conducted for the CAARC model under varying incoming flow conditions. The results indicate that seasonal winds in a complex forest terrain significantly affect the building's vortex wake, increasing the irregularity and complexity of the structural wind pressure and base moment coefficients. Thus, the seasonal wind effect must be considered when designing wind-resistant engineering structures in forest regions moving forward. [ABSTRACT FROM AUTHOR]

As China accelerates its transition to a low-carbon society, its power system is facing growing challenges in terms of maintaining adequacy amid a rapidly evolving energy structure. The concept of adequacy, traditionally focused on power capacity and generation, has broadened to include dimensions like flexibility and inertia. Against this backdrop, optimizing the integration of coal power and renewable energy to meet the system's needs for adequacy, flexibility, and frequency stability has become a critical research area. This paper introduces the concept of "Generalized Adequacy", expanding the traditional understanding of adequacy, and proposes an optimization model for the coordinated development of coal power and renewable energy based on this concept. This study examines the effects of extreme weather, renewable energy penetration, wind–solar ratios, and generalized adequacy constraints using a case study from a central region of China. The findings reveal that extreme weather conditions drive an increase in photovoltaic installations, while higher renewable energy penetration leads to more wind power installations. Accounting for generalized adequacy constraints can moderate the retirement of coal-fired plants, reducing unnecessary inertia support in normal conditions and ensuring dynamic frequency stability during extreme weather events. [ABSTRACT FROM AUTHOR]

Abstract. Background:. Reviving patients with prolonged disorders of consciousness (DOCs) has always been focused and challenging in medical research. Owing to the limited effectiveness of available medicine, recent research has increasingly turned towards neuromodulatory therapies, involving the stimulation of neural circuits. We summarised the progression of research regarding neuromodulatory therapies in the field of DOCs, compared the differences among different studies, in an attempt to explore optimal stimulation patterns and parameters, and analyzed the major limitations of the relevant studies to facilitate future research. Methods:. We performed a search in the PubMed database, using the concepts of DOCs and neuromodulation. Inclusion criteria were: articles in English, published after 2002, and reporting clinical trials of neuromodulatory therapies in human patients with DOCs. Results:. Overall, 187 published articles met the search criteria, and 60 articles met the inclusion criteria. There are differences among these studies regarding the clinical efficacies of neurostimulation techniques for patients with DOCs, and large-sample studies are still lacking. Conclusions:. Neuromodulatory techniques were used as trial therapies for DOCs wherein their curative effects were controversial. The difficulties in detecting residual consciousness, the confounding effect between the natural course of the disease and therapeutic effect, and the heterogeneity across patients are the major limitations. Large-sample, well-designed studies, and innovations for both treatment and assessment are anticipated in future research.

Abstract Background Malaria transmission depends on infected mosquitoes and can be controlled by transmission-blocking drugs. The recently discovered FREP1-mediated malaria transmission pathway is an excellent target to screen drugs for limiting transmission. Methods To identify candidate small molecules, we used an ELISA-based approach to analyze extracts from a fungal library for inhibition of the FREP1–parasite interaction. We isolated and determined one active compound by chromatography and crystallography, respectively. We measured the effects of the bioactive compound on malaria transmission to mosquitoes through standard membrane-feeding assays (SMFA) and on parasite proliferation in blood by culturing. Results We discovered the ethyl acetate extract of the fungus Purpureocillium lilacinum that inhibited Plasmodium falciparum transmission to mosquitoes. Pre-exposure to the extract rendered Anopheles gambiae resistant to Plasmodium infection. Furthermore, we isolated one novel active compound from the extract and identified it as 3-amino-7,9-dihydroxy-1-methyl-6H-benzo[c]chromen-6-one, or “pulixin.” Pulixin prevented FREP1 from binding to P. falciparum-infected cell lysate. Pulixin blocked the transmission of the parasite to mosquitoes with an EC50 (the concentration that gave half-maximal response) of 11 µM based on SMFA. Notably, pulixin also inhibited the proliferation of asexual-stage P. falciparum with an EC50 of 47 nM. The compound did not show cytotoxic effects at a concentration of 116 µM or lower. Conclusion By targeting the FREP1–Plasmodium interaction, we discovered that Purpureocillium lilacinum extract blocked malaria transmission. We isolated and identified the bioactive agent pulixin as a new compound capable of stopping malaria transmission to mosquitoes and inhibiting parasite proliferation in blood culture.

BackgroundAcute myeloid leukemia (AML) with t(8;21) needs to be further stratified. In addition to leukemia cells, immune cells in tumor microenvironment participate in tumor initiation, growth and progression. Interleukins (ILs)/interleukin receptors (ILRs) interaction plays important roles in the antitumor immune response. IL7R is reported to be relevant to prognosis in solid tumor and acute lymphoblastic leukemia. However, the prognostic significance of IL7R in t(8;21) AML remains to be clarified.MethodsBone marrows collected from 156 newly diagnosed t(8;21) AML patients were used for testing IL7R transcript level by TaqMan-based real-time quantitative PCR (RQ-PCR), and RNAseq were performed in 15 of them. Moreover, IL7R expression at diagnosis were measured by RQ-PCR and flow cytometry (FCM) simultaneously in other 13 t(8;21) AML patients.Resultst(8;21) AML patients had varied IL7R transcript levels and were categorized into low-expression (IL7R-L) and high-expression (IL7R-H) groups; IL7R-L was significantly associated with a lower relapse-free survival (RFS) rate (P=0.0027) and KITD816/D820 mutation (P=0.0010). Furthermore, IL7R-L was associated with a lower RFS rate in KITD816/D820 group (P=0.013) and IL7R-H/KITD816/D820 patients had similar RFS to KITN822/e8/WT patients (P=0.35). GO analysis enrichment showed that down-regulated genes were predominantly involved in the regulation of T cell and leukocyte activation, proliferation and differentiation in IL7R-L group. IL7R-L had significantly lower levels of Granzymes A/B, CCR7, CD28 and CD27 than IL7R-H group (all P

Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111) heterojunctions is reported, in which a Schottky barrier is formed at the metal/oxides interface, and 2d electron gas is formed at the interface of perovskite oxides. A negative differential resistance is observed in the RESET process. The result shows that the observed resistive switching is strongly associated with oxygen‐vacancies (OVs) in oxides with dominating contributions from electron hopping between OV trap sites, and can be controlled by oxygen annealing and electron injection. Remarkably, a method is developed by continuous RESET processes to increase the high resistance state by 1–3 orders of magnitude, with an on/off ratio enhanced from ≈10 to ≈104. The work provides a promising pathway to understand conduction mechanism of oxides memristors and promote its application in RRAM and in‐memory computing.