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Background: Tick-borne diseases (TBDs) can be fatal to humans as well as to animals causing severe economic losses globally to livestock industries. Many countries conduct regular surveillance of TBDs in livestock. Serological and molecular surveillance of TBDs in livestock and humans was carried out in the Republic of Korea. However, there are not a lot of data on analyses of anaplasmosis in Korean native goats and the correlation with rearing methods and seasons. Methods: In this study, goats in Ulsan city were tested for anaplasmosis by PCR and 16S rRNA sequencing. A total of 452 goat blood samples were collected from 20 farms in 2016. The goat farms in Ulsan city had three different types of rearing methods: conventional, confined, and mixed grazing-confined. Results: Forty-nine of the 452 goats (10.8%) were anaplasmosis positive. Sequence analysis of the PCR products from these 49 goats revealed that 39 of 452 goats (8.6%) were Anaplasma bovis positive, and 10 of 452 goats (2.2%) were infected with Anaplasma capra. The highest outbreaks of anaplasmosis occurred in mixed grazing-confined type of farms (27.1%, 33/122) (χ2 = 60.72, df = 2, p < 0.05), but there was no significant difference in the occurrence of anaplasmosis between spring, summer, and fall seasons. Conclusions: This study was the first detection of A. bovis in Korean native goats and its relationship with rearing methods and seasons. These findings suggested that Korean native goats were highly exposed to Anaplasma spp. during summers when the tick population is the highest and in farms employing mixed grazing-confined rearing methods. [ABSTRACT FROM AUTHOR]

In this work, we fabricated n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with a metal-oxide-semiconductor (MOS) interface of Y2O3/In0.53Ga0.47As. We investigated interfacial properties of the gate stack through the H2 ambient annealing process in MOSCAPs. We obtained an extremely low interface trap density of Dit = 1.8 × 1011 cm−2 eV−1. We compared the H2 annealing effect in different gate electrode materials of Ni and Pt. We determined that the Pt electrode was effective in maximizing the impact of H2 annealing. Also, we fabricated In0.53Ga0.47As-on-insulator MOS field-effect-transistors using an optimized annealing process, which showed more stable electrical characteristics than devices through the N2 ambient annealing process. [ABSTRACT FROM AUTHOR]

Abstract Self-powered flexible electronics using high-performance inorganic materials have been studied and developed for the essence of future electronics due to the thing, lightweight, self-sustainable, and biocompatible characteristics, which can be applied to body sensor network and next generation Internet of Things (IoT). However, most of inorganic materials should be processed in the high-temperature processes such as the semiconductor fabrication, which is not compatible flexible plastic substrates. Therefore, the new approaches must be demonstrated to overcome the thermal limits of previous methodology and achieve the flexible inorganic electronics on various flexible plastic substrates. In this review paper, we introduce the recent progress of technologies to realize flexible and high-performance inorganic electronics on plastic substrates over the thermal limits, i.e., laser-assisted procedure, chemical or mechanical exfoliation approaches. They are compatible not only to flexible plastic substrates but also to conventional device processes. We also explain the novel application devices such as flexible optoelectronics, flexible large-scale integration (LSI) devices, flexible energy harvesters, and flexible sensors using the recent-developed technologies beyond the previous thermal limit. This paper highlights the proper direction to complete future flexible inorganic electronics for high-performance self-powered systems. Graphical abstract This review introduces brief overview of representative technological advancements for self-powered flexible electronic systems beyond its thermal limit. This review has four main categories: i) the laser technology including light-material interaction and ILLO, and their key applications, ii) flexible optoelectronics for biomedical devices, iii) electronics for f-LSI, iv) self-powered flexible energy harvesters and sensors. fx1 Highlights • System-on-plastic is a vital feature for future self-powered flexible electronics. • Plastics cannot endure important high-temperature device fabrication processes. • This review introduces state-of-a-art technologies to overcome the thermal limits. • There are laser (optical), exfoliation (physical), and etching (chemical) methods. • Many applications are studied from flexible electrodes to machine-learning sensors. [ABSTRACT FROM AUTHOR]

Abstract In this simulation based study, we report a tunnel field effect transistor on SOI substrates with phosphorene as source material to enhance the scaling of Si CMOS technology. The proposed device has been evaluated in the form of two design concept (lateral as well as vertical tunneling) and compared with its counterpart of Germanium source and silicon based conventional devices. Electrostatic doping is utilized in place of conventional chemical doping in the active medium, source and drain. This heterostructure tunnel FETs boots the conduction current significantly and reduced the supply voltage by unique thickness dependent properties of phosphorene. The proposed TFET found a wonderful energy efficient (10−2 fJ switching energy) steep switching device (∼0.1 mV/dec of point subthreshold swing) for future CMOS scaling with ∼109 on-to-off current ratio with 150 mV gate voltage swing and expected for sub-0.2 V operation at ≥1 GHz frequency. Highlights • This simulation study proposed a novel phosphorene source Tunnel FETs. • The device has been evaluated with lateral as well as vertical tunneling design. • The proposed Tunnel FET found energy efficient with 10−2 fJ switching energy. • The device shows 0.1 mV/dec SS with ∼109 Ion/Ioff for 150 mV gate voltage swing. • The device will be expected for sub-0.2 V operation at ≥1 GHz frequency. [ABSTRACT FROM AUTHOR]

Abstract Carbonaceous materials derived from a variety of cheap and sustainable biomass have shown great potential as conductive substrates for the coating of pseudocapacitive materials. In this study, yeast-derived N-doped carbon microsphere/polyaniline (YC/PANI) composites are synthesized by an in situ polymerization approach, using yeasts as the carbon source and structural template. The self-templated hollow YC with good conductivity has many active sites for anchoring PANI, and alleviates the structure destruction caused by the redox reaction of PANI. Accordingly, the YC/polyaniline composite as a supercapacitor electrode exhibits a high specific capacitance (500 F g−1 at a current density of 1 A g−1) and good rate capability in a three-electrode system. Additionally, the symmetric supercapacitor of the YC/polyaniline composite delivers a high capacitance (100 F g−1 at 1 A g−1) and remarkable cycle life (95.4% of the initial capacitance maintenance after 5000 cycles). The uniform coating of PANI nanowires and robust structure stability of composites are responsible for excellent electrochemical properties. Graphical abstract Image 1 Highlights • Yeast-derived carbon microsphere/polyaniline composites are synthesized as electrode materials for supercapacitors. • The optimized electrode exhibits a high specific capacitance and a favorable rate capability. • The hollow and robust microspherical architecture of the composite ensures the long-term cycling stability. [ABSTRACT FROM AUTHOR]

Abstract: Nanosized Sn‐based materials as anodes in lithium‐ion batteries suffer from capacity fading because of aggregation and severe volume change (∼300 %) during the charge/discharge process. We developed ultrafine Sn nanoparticles anchored on a graphene‐hollow carbon framework as anode material. Graphene‐hollow carbon framework (G‐HCF) anchors ultrafine Sn nanoparticles on its surface to prevent aggregation. The hollow structure can provide a buffer space to accommodate the volume expansion of the Sn particles and prevents electrode pulverization during the charge/discharge process. Furthermore, the interconnected hollow carbon structure enables rapid lithium‐ion and electron transport to give the enhanced rate performance. Also, the G‐HCF was doped with nitrogen and phosphorus to stabilize its electrochemical performance. Consequently, the as‐prepared G‐HCF‐Sn composite exhibited a highly stable cycling performance, even at a current density of 1.0 A/g (specific capacity of 1048 mA h/g after 1000 cycles). [ABSTRACT FROM AUTHOR]

A one-pot facile hydrothermal synthesis of fluorine-doped CoFe 2 O 4 sphere (FS-CoFe 2 O 4 )/graphene sheet (GS) composites, based on the Ostwald ripening mechanism, is presented in this work. Incorporation of fluorine in CoFe 2 O 4 /GS improves ion diffusion by forming a highly porous structure that serves as an electrolyte reservoir during the redox reactions and facilitates charge transfer in the electrode material. The influence of the fluorine concentration on the relationship between structure and electrochemical performance of CoFe 2 O 4 /GS is also studied. The FS-CoFe 2 O 4 /GS composite exhibits a high specific capacity of 288 C g −1 at a current density of 1 A g −1 , along with an excellent rate capability of 80% (230 C g −1 at a current density of 10 A g −1 ). Moreover, the FS-CoFe 2 O 4 /GS composite is used to assemble a hybrid supercapacitor, which exhibits a high operating voltage of 1.6 V and delivers a high energy density of 28.4 Wh kg −1 at a power density of 0.9 kW kg −1 , as well as an outstanding cycling performance (90% capacity retention after 20,000 cycles, in which the GSs support FS-CoFe 2 O 4 for the whole duration of the cycling tests). The present study can open up a new avenue for exploiting fluorine as a dopant in high-performance hybrid supercapacitors. [ABSTRACT FROM AUTHOR]

Abstract: Graphene‐based nanocomposites are characterized by high mechanical strength, excellent electrical conductivity, and outstanding thermal and chemical stability. Additionally, the combination of versatile functionalization chemistry and simplicity of large‐scale synthesis makes graphene ideal for electrode materials for energy storage devices. To improve the electrochemical performance even further, recent research has focused on the preparation of porous graphene structures, either by creating holes in the graphene sheets or by assembling them into a 3D porous framework. Porous graphene and reduced graphene oxide allow for rapid ion diffusion and display high real surface area. In this review paper, the conventional methods for the preparation of porous graphene are summarized and recent progress in porous graphene‐based nanomaterials for electrochemical energy storage devices is discussed. [ABSTRACT FROM AUTHOR]

In this brief, we fabricated Ge (110)-oninsulator (-OI) structures on Si substrates via wafer bonding and epitaxial lift-off (ELO) process using Ge layer grown on GaAs for low-temperature layer stacking toward monolithic 3-D integration. We also systematically investigated the lateral etching behaviors of AlAs, which was used as a sacrificial layer in the ELO process, on GaAs (110) substrates. Fabricated Ge (110)-OI was analyzed by surface atomic force microscopy, X-ray diffraction, Raman shift, and transmission electron microscope analyses. We found that the 40-nm-thick ultrathin-body Ge (110)-OI has very high crystal quality, indicating our Ge stacking process is very stable. [ABSTRACT FROM AUTHOR]