251. Cross-Sectional Analysis of CuInS2Thin Film Prepared from Electroplated Precursor
- Author
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Yasunari Suzuki, Koji Takei, Ryo Fukasawa, Daisuke Matono, Kenji Nakamura, Kentaro Ito, Kenji Takeuchi, Masao Nakazawa, Yoshio Onuma, Yoshio Hashimoto, and Sumihiro Ichikawa
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,General Engineering ,Nucleation ,General Physics and Astronomy ,Nanotechnology ,Focused ion beam ,law.invention ,law ,Etching (microfabrication) ,Solar cell ,Thin film solar cell ,Thin film ,Composite material ,Electroplating ,Layer (electronics) - Abstract
Thin CuInS2 films were prepared by sulfurization of Cu/In bi-layers. The precursor layer was firstly electroplated onto the treated surface of Mo-coated glass. The observation of the cross- section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor and subsequently continued to grow until the advancing front of the film reached the Mo layer. Then followed the nucleation of voids near the bottom of the CuInS2 film. Prolonged sulfurization caused the voids to increase in size. Thin film solar cells were fabricated using the CuInS2 film as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency.
- Published
- 2003