143 results on '"Collazo, Ramón"'
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102. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
103. Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition
104. Polarity control and growth of lateral polarity structures in AlN
105. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
106. Identidad cultural o aculturación: el dilema de una escuela indígena en un contexto urbano
107. Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements
108. Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
109. Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition
110. Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport
111. Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012)
112. Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation
113. On the origin of the 265 nm absorption band in AlN bulk crystals
114. Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics
115. Schottky barrier and interface chemistry for Ni contacted to Al 0.8 Ga 0.2 N grown on c‐oriented AlN single crystal substrates
116. Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN
117. Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
118. On the strain in n-type GaN
119. Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions
120. Ni/Au Schottky diodes on Al x Ga 1‐x N (0.7<1) grown on AlN single crystal substrates
121. Impact of gallium supersaturation on the growth of N‐polar GaN
122. Characterization of dislocation arrays in AlN single crystals grown by PVT
123. Sharp bound and free exciton lines from homoepitaxial AlN
124. Strain in Si doped GaN and the Fermi level effect
125. Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
126. Fermi level effect on strain of Si-doped GaN
127. 265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization
128. Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
129. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity
130. Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity
131. Growth of highly resistive Ga‐polar GaN by LP‐MOVPE
132. Properties of AlN based lateral polarity structures.
133. Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates.
134. Los diodos láser en la Enseñanza de la Física en Ingeniería.
135. Growth of highly resistive Ga-polar GaN by LP-MOVPE.
136. Point defect management in GaN by Fermi-level control during growth
137. Fermi level effect on strain of Si-doped GaN
138. Vacancy defects in UV-transparent HVPE-AlN.
139. Impact of gallium supersaturation on the growth of N-polar GaN.
140. Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates.
141. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications.
142. Strain in Si doped GaN and the Fermi level effect.
143. Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity.
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