301. Transport in inhomogeneous semiconductors
- Author
-
Giuseppe Grosso and Giuseppe Pastori Parravicini
- Subjects
Materials science ,business.industry ,Heterostructure-emitter bipolar transistor ,Bipolar junction transistor ,Transistor ,Doping ,law.invention ,Semiconductor ,Modulation ,law ,Optoelectronics ,Field-effect transistor ,business ,Electronic band structure - Abstract
This chapter deals with semiconducting structures that are inhomogeneous, because of non-uniform doping or non-uniform band structure, or both. Particular attention is given to the bipolar junction transistor and to the metal-oxide-semiconductor field-effect transistor, because of their prominent fundamental and technological importance. We begin this chapter with a discussion of p-n homojunctions, and p-n-p (or n-p-n) bipolar structures, where the transistor action is achieved through the interaction of two back-to-back junctions. We then consider a variety of structures that can be envisaged when the flexibility in doping is accompanied also by the flexibility in the composing materials; this analysis includes semiconductor heterostructures, metal-semiconductor contacts, metal-oxide-semiconductor junctions. Finally we discuss the field-effect transistor action, achieved through modulation of the width of the conductivity channel in doped semiconductors.
- Published
- 2000