Search

Self-assembly silver nanoparticles were successfully prepared on indium tin oxide coated glass substrates by means of a vacuum vapor evaporation method followed by thermal annealing. The nanoparticles were characterized using a field-emission scanning election microscopy with an energy dispersive X-ray analyzer and a UV–vis spectrometer. It was found that the particle morphology was drastically changed depending both on the evaporated silver mass thickness and the length of time of the thermal annealing. Some absorption peaks were observed in the UV–vis spectra and the peaks showed red-shift with the average particle size increase. These facts suggest that the absorption peaks may arise from the localized surface plasmon resonance. These controllable absorptions may be suitable for photon management in dye sensitized solar cells. [ABSTRACT FROM AUTHOR]

We have demonstrated NAND and NOR logic circuit operations of stacked-structure complementary thin-film transistors (TFTs) using 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) and soluble ZnO as active layers. Bottom-gate-type TIPS-pentacene TFTs, as p-channel transistors, were formed on n-channel ZnO TFTs with common gate electrodes. Solution-processed silicone-resin layers were used as gate dielectric and electrical interconnection layers between lower and upper TFTs. The stacked-structure integrated circuits have several advantages such as ease of active layer formation, compact device area per stage, and the short length of the interconnection compared with the planar configuration in a conventional logic circuit. [ABSTRACT FROM AUTHOR]

Wet processed ZnO films for semiconductor layers bring positive impact on fabrication of field-effect transistors (FETs) in terms of their low process temperature and manufacturing cost reduction. In our work, with the aim of fabricating organic light-emitting transistors (OLETs) using transparent ZnO FETs as the driver transistors, we have fabricated a wet processed ZnO film as a semiconductor layer, and investigated the effects of ultraviolet/ozone (UV/O3)-assisted thermal treatments on ZnO FET characteristics. The results on the carrier mobility and thermal treatment temperature of ZnO films showed that the carrier mobility is almost proportional to treatment temperature, and the UV/O3-assisted thermal treatment lowers the thermal treatment temperature. Moreover, devices subjected to UV/O3-assisted thermal treatments showed excellent electrical characteristics compare with devices without the treatments. These results show that the UV/O3-assisted thermal treatment is expected to facilitate OLET fabrication on flexible plastic films. [ABSTRACT FROM AUTHOR]