301. Silicon superficial texturing bypulsed laser
- Author
-
Eugenio Rodríguez, M. Arronte, L. Ponce, A. Montaigne, A. Castellanos, R. León, and T. Flores
- Subjects
Pulsed laser ,lcsh:TN1-997 ,Silicon ,Materials science ,Semiconductor materials ,Láser ,chemistry.chemical_element ,Laser ,Reflectancia ,Reflectance ,Silicio ,Texturing ,law.invention ,Optics ,law ,LIPSS ,Materials Chemistry ,Surface structure ,Physical and Theoretical Chemistry ,Texturado ,lcsh:Mining engineering. Metallurgy ,business.industry ,Mean value ,Metals and Alloys ,Condensed Matter Physics ,Reflectivity ,chemistry ,business - Abstract
Texturing of silicon surfaces with pulsed laser is made. The method is based on the formation of laser- induced periodic surface structure (LIPSS). The process is temporary characterized through the dynamic reflectance, thus determining the formation threshold of the structure. Relation between the different textures and the spectral reflectance of the samples before and after the treatment is also characterized. The mean value of spectral reflectance decreases up to a 6 %.Se realiza el texturado de superficies de silicio con un láser pulsado mediante la formación de una estructura periódica inducida por láser (LIPSS). Se caracteriza el proceso mediante reflectancia dinámica, determinándose el umbral de formación de la estructura. Se caracteriza el nivel de texturado midiendo la reflectancia espectral de las muestras antes y después del tratamiento. El valor medio de la reflectancia espectral disminuye hasta el 6 %.
- Published
- 1998
- Full Text
- View/download PDF